Inventor
YOUN JAE-YOUN
KR30 patents
⚠️ This page may combine multiple inventors who share the name “YOUN JAE-YOUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
23 patentsUS9087602B2Jul 21, 2015
Volatile memory device capable of relieving disturbances of adjacent memory cells and refresh method thereof
SAMSUNG ELECTRONICS CO LTD86 citations98
US7102936B2Sep 5, 2006
Internal voltage generating circuit for periphery, semiconductor memory device having the circuit and method thereof
SAMSUNG ELECTRONICS CO LTD13 citations92
US6842382B2Jan 11, 2005
Internal voltage generating circuit for periphery, semiconductor memory device having the circuit and method thereof
SAMSUNG ELECTRONICS CO LTD22 citations92
US9536586B2Jan 3, 2017
Memory device and memory system having the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US9147461B1Sep 29, 2015
Semiconductor memory device performing a refresh operation, and memory system including the same
SAMSUNG ELECTRONICS CO LTD14 citations84
US6097216AAug 1, 2000
Integrated buffer circuits having improved noise immunity and TTL-to-CMOS signal conversion capability
SAMSUNG ELECTRONICS CO LTD16 citations84
US10684793B2Jun 16, 2020
Semiconductor memory devices including error correction circuits and methods of operating the semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD4 citations83
US9064603B1Jun 23, 2015
Semiconductor memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD9 citations83
US7501881B2Mar 10, 2009
Boosting voltage generating circuit for generating a stable boosting voltage under a wider range of supply voltage and semiconductor memory device having the same
SAMSUNG ELECTRONICS CO LTD9 citations82
US10553260B2Feb 4, 2020
Stacked memory device, a system including the same and an associated method
SAMSUNG ELECTRONICS CO LTD6 citations81
US7729195B2Jun 1, 2010
Semiconductor memory device having split word line driver circuit with layout patterns that provide increased integration density
SAMSUNG ELECTRONICS CO LTD14 citations81
US7046571B2May 16, 2006
Internal voltage generating circuit for periphery, semiconductor memory device having the circuit and method thereof
SAMSUNG ELECTRONICS CO LTD8 citations74
US9875155B2Jan 23, 2018
Memory device for performing error correction code operation and redundancy repair operation
SAMSUNG ELECTRONICS CO LTD3 citations73
US9685218B2Jun 20, 2017
Memory device and memory system having the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US9460816B2Oct 4, 2016
Semiconductor memory devices and memory systems including the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US11114139B2Sep 7, 2021
Stacked memory device, a system including the same and an associated method
SAMSUNG ELECTRONICS CO LTD1 citations70
US6018485AJan 25, 2000
Semiconductor memory device with cascaded burn-in test capability
SAMSUNG ELECTRONICS CO LTD3 citations62
USRE50830EMar 17, 2026
Semiconductor memory devices including error correction circuits and methods of operating the semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations61
US9318168B2Apr 19, 2016
Memory system for continuously mapping addresses of a memory module having defective locations
SAMSUNG ELECTRONICS CO LTD2 citations61
US10923165B2Feb 16, 2021
Stacked memory device, a system including the same and an associated method
SAMSUNG ELECTRONICS CO LTD0 citations59
US7738311B2Jun 15, 2010
Semiconductor memory devices having optimized memory block organization and data line routing for reducing chip size and increasing speed
SAMSUNG ELECTRONICS CO LTD6 citations54
US9552867B2Jan 24, 2017
Semiconductor memory devices and memory systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations42
US9390778B2Jul 12, 2016
Semiconductor memory devices and memory systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations39
CHUNG HOI-JU
2 patentsUS9632856B2Apr 25, 2017
Semiconductor memory devices including error correction circuits and methods of operating the semiconductor memory devices
CHUNG HOI-JU8 citations82
US9268636B2Feb 23, 2016
Semiconductor memory devices including error correction circuits and methods of operating the semiconductor memory devices
CHUNG HOI-JU10 citations82