Inventor

CHIANG HUNG-LI

TW158 patents

⚠️ This page may combine multiple inventors who share the name “CHIANG HUNG-LI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHIANG HUNG-LI

TAIWAN SEMICONDUCTOR MFG CO LTD

Threshold voltage adjustment for a gate-all-around semiconductor structure

Strained nanowire CMOS device and method of forming

Semiconductor device structure with semiconductor wire

Replacement gate process for FinFET

Semiconductor Fin FET device with epitaxial source/drain

Memory device and memory circuit

Semiconductor device and manufacturing method thereof

Method of manufacturing a semiconductor device and a semiconductor device

Multi-gate semiconductor device

Memory device and multi-level memory cell having ferroelectric storage element and magneto-resistive storage element

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Forming semiconductor structures with two-dimensional materials

Method of manufacturing a semiconductor device and a semiconductor device

Isolation structures of semiconductor devices

Hybrid semiconductor transistor structure and manufacturing method for the same

Strained nanowire CMOS device and method of forming

Semiconductor device and manufacturing method thereof

Multi-gate semiconductor device and method for forming the same

Replacement gate process for FinFET

Method of manufacturing a semiconductor device and a semiconductor device

Semiconductor device and manufacturing method thereof

Replacement gate process for FinFET

Semiconductor device structure with strain-relaxed buffer

Method of manufacturing a semiconductor device with multilayered channel structure

Semiconductor device and manufacturing method thereof

Field-effect transistor with dual vertical gates

Strain enhancement for FinFETs

Forming semiconductor structures with two-dimensional materials

Semiconductor structure with extended contact structure

Resistive memory devices using a carbon-based conductor line and methods for forming the same

Data storage element and manufacturing method thereof

Forming semiconductor structures with two-dimensional materials

Structure and formation method of semiconductor device with hybrid fins

Read method, write method and memory circuit using the same

Resistive memory devices using a carbon-based conductor line and methods for forming the same

Memory devices with selector layer and methods of forming the same

Method of manufacturing a semiconductor device and a semiconductor device

Method for manufacturing semiconductor structure with extended contact structure

Low dimensional material device and method

Method of manufacturing a semiconductor device and a semiconductor device

Semiconductor device and manufacturing method thereof

Method of manufacturing a semiconductor device with multilayered channel structure

Memory device and memory circuit

Multi-gate device

Method of manufacturing a semiconductor device and a semiconductor device

Replacement gate process for FinFET

TAIWAN SEMICONDUCTOR MFG

FinFETs with different fin height and EPI height setting

FinFETs with different fin height and EPI height setting

LEE TSUNG-LIN

Semiconductor device having a strained region