Inventor
FERLA GIUSEPPE
IT68 patents
⚠️ This page may combine multiple inventors who share the name “FERLA GIUSEPPE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SGS THOMSON MICROELECTRONICS
24 patentsUS5981343ANov 9, 1999
Single feature size mos technology power device
SGS THOMSON MICROELECTRONICS43 citations96
US5817546AOct 6, 1998
Process of making a MOS-technology power device
SGS THOMSON MICROELECTRONICS86 citations96
US6140679AOct 31, 2000
Zero thermal budget manufacturing process for MOS-technology power devices
SGS THOMSON MICROELECTRONICS17 citations93
US6054737AApr 25, 2000
High density MOS technology power device
SGS THOMSON MICROELECTRONICS16 citations93
US5981998ANov 9, 1999
Single feature size MOS technology power device
SGS THOMSON MICROELECTRONICS18 citations93
US5933734AAug 3, 1999
High speed MOS-technology power device integrated structure, and related manufacturing process
SGS THOMSON MICROELECTRONICS22 citations93
US5933733AAug 3, 1999
Zero thermal budget manufacturing process for MOS-technology power devices
SGS THOMSON MICROELECTRONICS24 citations93
US5883412AMar 16, 1999
Low gate resistance high-speed MOS-technology integrated structure
SGS THOMSON MICROELECTRONICS19 citations93
US5874338AFeb 23, 1999
MOS-technology power device and process of making same
SGS THOMSON MICROELECTRONICS20 citations93
US6051862AApr 18, 2000
MOS-technology power device integrated structure
SGS THOMSON MICROELECTRONICS21 citations92
US5900662AMay 4, 1999
MOS technology power device with low output resistance and low capacitance, and related manufacturing process
SGS THOMSON MICROELECTRONICS45 citations91
US5118635AJun 2, 1992
Integrated high-voltage bipolar power transistor and low voltage mos power transistor structure in the emitter switching configuration and relative manufacturing process
SGS THOMSON MICROELECTRONICS16 citations82
US5065213ANov 12, 1991
Integrated high-voltage bipolar power transistor and low voltage mos power transistor structure in the emitter switching configuration and relative manufacturing process
SGS THOMSON MICROELECTRONICS16 citations82
US6566690B2May 20, 2003
Single feature size MOS technology power device
SGS THOMSON MICROELECTRONICS6 citations74
US6468866B2Oct 22, 2002
Single feature size MOS technology power device
SGS THOMSON MICROELECTRONICS7 citations74
US6064087AMay 16, 2000
Single feature size MOS technology power device
SGS THOMSON MICROELECTRONICS5 citations74
US6030870AFeb 29, 2000
High density MOS technology power device
SGS THOMSON MICROELECTRONICS5 citations74
US5985721ANov 16, 1999
Single feature size MOS technology power device
SGS THOMSON MICROELECTRONICS10 citations74
US5851855ADec 22, 1998
Process for manufacturing a MOS-technology power device chip and package assembly
SGS THOMSON MICROELECTRONICS6 citations74
US5841167ANov 24, 1998
MOS-technology power device integrated structure
SGS THOMSON MICROELECTRONICS13 citations73
US5141883AAug 25, 1992
Process for the manufacture of power-mos semiconductor devices
SGS THOMSON MICROELECTRONICS9 citations71
US6548864B2Apr 15, 2003
High density MOS technology power device
SGS THOMSON MICROELECTRONICS3 citations63
USRE36311ESep 21, 1999
Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process
SGS THOMSON MICROELECTRONICS2 citations63
USRE35642EOct 28, 1997
Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process
SGS THOMSON MICROELECTRONICS2 citations63
ST MICROELECTRONICS SRL
15 patentsUS6365930B1Apr 2, 2002
Edge termination of semiconductor devices for high voltages with resistive voltage divider
ST MICROELECTRONICS SRL149 citations98
US6228719B1May 8, 2001
MOS technology power device with low output resistance and low capacitance, and related manufacturing process
ST MICROELECTRONICS SRL65 citations94
US5670392ASep 23, 1997
Process for manufacturing high-density MOS-technology power devices
ST MICROELECTRONICS SRL41 citations93
US5631483AMay 20, 1997
Power device integrated structure with low saturation voltage
ST MICROELECTRONICS SRL45 citations93
US7875936B2Jan 25, 2011
Power MOS electronic device and corresponding realizing method
ST MICROELECTRONICS SRL6 citations74
US6724009B2Apr 20, 2004
Semiconductor integrated electronic device and corresponding manufacturing method
ST MICROELECTRONICS SRL5 citations74
US6278329B1Aug 21, 2001
Low-noise amplifier stage with matching network
ST MICROELECTRONICS SRL12 citations74
US5631476AMay 20, 1997
MOS-technology power device chip and package assembly
ST MICROELECTRONICS SRL9 citations74
US7067363B2Jun 27, 2006
Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances and high scaling down density
ST MICROELECTRONICS SRL7 citations73
US7569883B2Aug 4, 2009
Switching-controlled power MOS electronic device
ST MICROELECTRONICS SRL7 citations72
US5302549AApr 12, 1994
Metal-semiconductor ohmic contact forming process
ST MICROELECTRONICS SRL15 citations72
US8895370B2Nov 25, 2014
Vertical conduction power electronic device and corresponding realization method
ST MICROELECTRONICS SRL2 citations63
US6890806B2May 10, 2005
Semiconductor integrated electronic device and corresponding manufacturing method
ST MICROELECTRONICS SRL2 citations63
US5221855AJun 22, 1993
Monolithic vertical-type semiconductor power device with a protection against parasitic currents
ST MICROELECTRONICS SRL2 citations63
US7304335B2Dec 4, 2007
Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performance and high scaling down density
ST MICROELECTRONICS SRL2 citations62
CONS RIC MICROELETTRONICA
4 patentsUS5667905ASep 16, 1997
Electro-luminescent material, solid state electro-luminescent device and process for fabrication thereof
CONS RIC MICROELETTRONICA17 citations79
US5580663ADec 3, 1996
Electro-luminescent material, solid state electro-luminescent device and process for fabrication thereof
CONS RIC MICROELETTRONICA18 citations76
US5468660ANov 21, 1995
Process for manufacturing an integrated bipolar power device and a fast diode
CONS RIC MICROELETTRONICA7 citations74
US5343068AAug 30, 1994
Integrated bipolar power device and a fast diode
CONS RIC MICROELETTRONICA4 citations63
SGS MICROELETTRONICA SPA
2 patentsUS4667393AMay 26, 1987
Method for the manufacture of semiconductor devices with planar junctions having a variable charge concentration and a very high breakdown voltage
SGS MICROELETTRONICA SPA53 citations92
US4641171AFeb 3, 1987
Monolithically integrated semiconductor power device
SGS MICROELETTRONICA SPA9 citations72
ATES COMPONENTI ELETTRON
2 patentsCONSORZIO PER LA RICERA SULLA
1 patentSGS THOMSON MICROELECTTRONICA
1 patentSGS THOMSON MICROELECTRONISC S
1 patentShowing the top 50 of 68 patents by PatentIndex Score.