Inventor · disambiguated record
Marcin Gajek
Also filed as: GAJEK MARCIN · GAJEK MARCIN J · GAJEK Marcin Jan
46 granted patents·4 pending applications·381 citations·filing 2012–2023
98Inventor score
Files withSPIN MEMORY INC31IBM7INTEGRATED SILICON SOLUTION CAYMAN INC6CASETEXT INC3SPIN TRANSFER TECH INC3
Top patents by PatentIndex Score
50 records- 0197US10236047B1Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAMSPIN MEMORY INC·Filed 2017·Granted Mar 19, 2019·32 cites·34 claims
- 0296US11861320B1Text reduction and analysis interface to a text generation modeling systemCASETEXT INC·Filed 2023·Granted Jan 2, 2024·47 cites·20 claims
- 0396US10270027B1Self-generating AC current assist in orthogonal STT-MRAMSPIN MEMORY INC·Filed 2017·Granted Apr 23, 2019·25 cites·46 claims
- 0496US10236048B1AC current write-assist in orthogonal STT-MRAMSPIN MEMORY INC·Filed 2017·Granted Mar 19, 2019·23 cites·31 claims
- 0596US9773974B2Polishing stop layer(s) for processing arrays of semiconductor elementsSPIN TRANSFER TECH INC·Filed 2016·Granted Sep 26, 2017·71 cites·20 claims
- 0695US11409752B1Dimensional reduction of complex vectors in artificially intelligent solutions to compare similarity of natural language textCASETEXT INC·Filed 2020·Granted Aug 9, 2022·26 cites·15 claims
- 0795US10229724B1Microwave write-assist in series-interconnected orthogonal STT-MRAM devicesSPIN MEMORY INC·Filed 2017·Granted Mar 12, 2019·20 cites·41 claims
- 0895US10199083B1Three-terminal MRAM with ac write-assist for low read disturbSPIN TRANSFER TECH INC·Filed 2017·Granted Feb 5, 2019·13 cites·33 claims
- 0994US12229522B2Text reduction and analysis interface to a text generation modeling systemCASETEXT INC·Filed 2023·Granted Feb 18, 2025·3 cites·20 claims
- 1093US10326073B1Spin hall effect (SHE) assisted three-dimensional spin transfer torque magnetic random access memory (STT-MRAM)SPIN MEMORY INC·Filed 2017·Granted Jun 18, 2019·13 cites·17 claims
- 1192US10347308B1Systems and methods utilizing parallel configurations of magnetic memory devicesSPIN MEMORY INC·Filed 2017·Granted Jul 9, 2019·11 cites·17 claims
- 1291US10360961B1AC current pre-charge write-assist in orthogonal STT-MRAMSPIN MEMORY INC·Filed 2017·Granted Jul 23, 2019·12 cites·21 claims
- 1391US10255962B1Microwave write-assist in orthogonal STT-MRAMSPIN MEMORY INC·Filed 2017·Granted Apr 9, 2019·12 cites·45 claims
- 1491US10186308B1Magnetic random access memory having improved reliability through thermal claddingSPIN TRANSFER TECH INC·Filed 2018·Granted Jan 22, 2019·15 cites·20 claims
- 1591US9042151B2Racetrack memory with electric-field assisted domain wall injection for low-power write operationIBM·Filed 2013·Granted May 26, 2015·12 cites·18 claims
- 1689US10403343B2Systems and methods utilizing serial configurations of magnetic memory devicesSPIN MEMORY INC·Filed 2017·Granted Sep 3, 2019·9 cites·21 claims
- 1788US10693056B2Three-dimensional (3D) magnetic memory device comprising a magnetic tunnel junction (MTJ) having a metallic buffer layerSPIN MEMORY INC·Filed 2018·Granted Jun 23, 2020·2 cites·18 claims
- 1886US10803916B2Methods and systems for writing to magnetic memory devices utilizing alternating currentSPIN MEMORY INC·Filed 2017·Granted Oct 13, 2020·3 cites·14 claims
- 1986US10797233B2Methods of fabricating three-dimensional magnetic memory devicesSPIN MEMORY INC·Filed 2017·Granted Oct 6, 2020·3 cites·22 claims
- 2086US10600478B2Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientationsSPIN MEMORY INC·Filed 2018·Granted Mar 24, 2020·7 cites·30 claims
- 2185US10937478B2Systems and methods utilizing serial and parallel configurations of magnetic memory devicesSPIN MEMORY INC·Filed 2019·Granted Mar 2, 2021·2 cites·21 claims
- 2281US10777736B2Polishing stop layer(s) for processing arrays of semiconductor elementsSPIN MEMORY INC·Filed 2017·Granted Sep 15, 2020·2 cites·8 claims
- 2379US10559338B2Multi-bit cell read-out techniquesSPIN MEMORY INC·Filed 2018·Granted Feb 11, 2020·4 cites·18 claims
- 2478US10686009B2High density MRAM integrationSPIN MEMORY INC·Filed 2018·Granted Jun 16, 2020·1 cites·16 claims
- 2576US10692556B2Defect injection structure and mechanism for magnetic memorySPIN MEMORY INC·Filed 2018·Granted Jun 23, 2020·1 cites·20 claims
- 2676US10541268B2Three-dimensional magnetic memory devicesSPIN MEMORY INC·Filed 2017·Granted Jan 21, 2020·2 cites·17 claims
- 2775US10593396B2Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientationsSPIN MEMORY INC·Filed 2018·Granted Mar 17, 2020·3 cites·24 claims
- 2874US2022376171A1Three-dimensional (3d) magnetic memory devices comprising a magnetic tunnel junction (mtj) having a metallic buffer layerINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2022·Application pending·0 cites
- 2969US11456410B2Three-dimensional (3D) magnetic memory devices comprising a magnetic tunnel junction (MTJ) having a metallic buffer layerINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2020·Granted Sep 27, 2022·0 cites·12 claims
- 3068US10692569B2Read-out techniques for multi-bit cellsSPIN MEMORY INC·Filed 2018·Granted Jun 23, 2020·2 cites·14 claims
- 3168US10460778B2Perpendicular magnetic tunnel junction memory cells having shared source contactsSPIN MEMORY INC·Filed 2017·Granted Oct 29, 2019·2 cites·9 claims
- 3268US10431628B2Dual channel/gate vertical field-effect transistor (FET) for use with a perpendicular magnetic tunnel junction (PMTJ)SPIN MEMORY INC·Filed 2018·Granted Oct 1, 2019·1 cites·15 claims
- 3366US10424357B2Magnetic tunnel junction (MTJ) memory device having a composite free magnetic layerSPIN MEMORY INC·Filed 2017·Granted Sep 24, 2019·2 cites·7 claims
- 3465US11631807B2Patterned silicide structures and methods of manufactureINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2021·Granted Apr 18, 2023·0 cites·20 claims
- 3562US10930703B2High density MRAM integrationSPIN MEMORY INC·Filed 2018·Granted Feb 23, 2021·0 cites·14 claims
- 3658US9577180B2Electrostatically controlled magnetic logic deviceIBM·Filed 2015·Granted Feb 21, 2017·0 cites·3 claims
- 3757US11107979B2Patterned silicide structures and methods of manufactureSPIN MEMORY INC·Filed 2018·Granted Aug 31, 2021·0 cites·20 claims
- 3857US9577179B2Electrostatically controlled magnetic logic deviceIBM·Filed 2013·Granted Feb 21, 2017·0 cites·11 claims
- 3953US8836058B2Electrostatic control of magnetic devicesIBM·Filed 2012·Granted Sep 16, 2014·0 cites·19 claims
- 4049US10790333B2Flexible substrate for use with a perpendicular magnetic tunnel junction (PMTJ)SPIN MEMORY INC·Filed 2017·Granted Sep 29, 2020·0 cites·9 claims
- 4149US10446742B2Method for manufacturing a magnetic memory element array using high angle side etch to open top electrical contactSPIN MEMORY INC·Filed 2018·Granted Oct 15, 2019·0 cites·18 claims
- 4248US11586906B2System and method for training artificial neural networksINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2018·Granted Feb 21, 2023·0 cites·20 claims
- 4348US2014151771A1Thin film deposition and logic deviceIBM·Filed 2013·Application pending·0 cites
- 4447US12182697B2System and method for training artificial neural networksINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2018·Granted Dec 31, 2024·0 cites·20 claims
- 4547US10878870B2Defect propagation structure and mechanism for magnetic memorySPIN MEMORY INC·Filed 2018·Granted Dec 29, 2020·0 cites·20 claims
- 4647US2014151770A1Thin film deposition and logic deviceIBM·Filed 2012·Application pending·0 cites
- 4746US10608047B1Magnetic memory element with voltage controlled magnetic anistropySPIN MEMORY INC·Filed 2018·Granted Mar 31, 2020·0 cites·9 claims
- 4844US10983883B2Error recovery in magnetic random access memory after reflow solderingSPIN MEMORY INC·Filed 2019·Granted Apr 20, 2021·0 cites·13 claims
- 4944US2014268982A1Racetrack memory with electric-field assisted domain wall injection for low-power write operationIBM·Filed 2013·Application pending·0 cites
- 5043US11342498B2High density 3D magnetic random access memory (MRAM) cell integration using wafer cut and transferINTEGRATED SILICON SOLUTION CAYMAN INC·Filed 2018·Granted May 24, 2022·0 cites·13 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →