P

Inventor

NITTA TETSUYA

JP42 patents
⚠️ This page may combine multiple inventors who share the name “NITTA TETSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

17 patents
US6821824B2Nov 23, 2004

Semiconductor device and method of manufacturing the same

MITSUBISHI ELECTRIC CORP53 citations96
US6307246B1Oct 23, 2001

Semiconductor resurf devices formed by oblique trench implantation

MITSUBISHI ELECTRIC CORP194 citations96
US6518144B2Feb 11, 2003

Semiconductor device having trenches and process for same

MITSUBISHI ELECTRIC CORP42 citations92
US7105387B2Sep 12, 2006

Semiconductor device and manufacturing method for the same

MITSUBISHI ELECTRIC CORP13 citations84
US6949798B2Sep 27, 2005

Semiconductor device

MITSUBISHI ELECTRIC CORP9 citations74
US11239329B2Feb 1, 2022

Semiconductor device

MITSUBISHI ELECTRIC CORP0 citations62
US12328887B2Jun 10, 2025

Semiconductor device and method of manufacturing semiconductor device

MITSUBISHI ELECTRIC CORP0 citations51
US12154976B2Nov 26, 2024

Semiconductor device and method of manufacturing semiconductor device

MITSUBISHI ELECTRIC CORP0 citations51
US11777021B2Oct 3, 2023

Semiconductor device

MITSUBISHI ELECTRIC CORP0 citations51
US11621321B2Apr 4, 2023

Semiconductor device

MITSUBISHI ELECTRIC CORP0 citations51
US11462615B2Oct 4, 2022

Semiconductor device

MITSUBISHI ELECTRIC CORP0 citations51
US11322604B2May 3, 2022

Semiconductor device and manufacturing method thereof

MITSUBISHI ELECTRIC CORP0 citations51
US12501635B2Dec 16, 2025

Semiconductor device

MITSUBISHI ELECTRIC CORP0 citations50
US12009360B2Jun 11, 2024

Semiconductor device and method for manufacturing the same

MITSUBISHI ELECTRIC CORP0 citations50
US11875990B2Jan 16, 2024

Semiconductor device including IGBT, boundary, and diode regions

MITSUBISHI ELECTRIC CORP0 citations50
US11569225B2Jan 31, 2023

Semiconductor device

MITSUBISHI ELECTRIC CORP0 citations50
US11908954B2Feb 20, 2024

Semiconductor device with insulated gate bipolar transistor region and diode region provided on semiconductor substrate and adjacent to each other

MITSUBISHI ELECTRIC CORP0 citations49

RENESAS ELECTRONICS CORP

13 patents

TSUDAKOMA IND CO LTD

4 patents

RENESAS TECH CORP

3 patents

TSUJIUCHI MIKIO

2 patents

MORII KATSUMI

1 patent

KAWAMATA TATSUYA

1 patent

YOSHIHISA YASUKI

1 patent