P

Inventor

IHM JEONG-DON

KR47 patents
⚠️ This page may combine multiple inventors who share the name “IHM JEONG-DON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

44 patents
US11342038B2May 24, 2022

Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD4 citations84
US11024400B2Jun 1, 2021

Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD6 citations84
US10824575B2Nov 3, 2020

Buffer device supporting training operations for a plurality of memory devices, and memory module and memory system each including the buffer device

SAMSUNG ELECTRONICS CO LTD8 citations84
US10679717B2Jun 9, 2020

Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD6 citations84
US10559373B2Feb 11, 2020

Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD9 citations84
US10340022B2Jul 2, 2019

Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD8 citations84
US10482935B2Nov 19, 2019

Nonvolatile memory including duty correction circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD11 citations83
US10291275B2May 14, 2019

Reception interface circuits supporting multiple communication standards and memory systems including the same

SAMSUNG ELECTRONICS CO LTD12 citations83
US10014039B2Jul 3, 2018

Method and circuit for self-training of a reference voltage and memory system including the same

SAMSUNG ELECTRONICS CO LTD6 citations83
US11742040B2Aug 29, 2023

Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD1 citations73
US11600539B2Mar 7, 2023

Defect detection structure of a semiconductor die, semiconductor device including the same and method of detecting defects in semiconductor die

SAMSUNG ELECTRONICS CO LTD2 citations72
US11062966B2Jul 13, 2021

Defect detection structure of a semiconductor die, semiconductor device including the same and method of detecting defects in semiconductor die

SAMSUNG ELECTRONICS CO LTD2 citations72
US10937474B2Mar 2, 2021

Nonvolatile memory including duty correction circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD2 citations72
US10770149B2Sep 8, 2020

Non-volatile memory device

SAMSUNG ELECTRONICS CO LTD6 citations72
US10937471B2Mar 2, 2021

Non-volatile memory device and storage device including the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US10754563B2Aug 25, 2020

Memory device for efficiently determining whether to perform re-training operation and memory system including the same

SAMSUNG ELECTRONICS CO LTD6 citations71
US10741225B2Aug 11, 2020

Non-volatile memory device and storage device including the same

SAMSUNG ELECTRONICS CO LTD1 citations71
US10600454B2Mar 24, 2020

Non-volatile memory device and storage device including the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US9904310B2Feb 27, 2018

Regulator circuit and power system including the same

SAMSUNG ELECTRONICS CO LTD2 citations69
US12573445B2Mar 10, 2026

Memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12340867B2Jun 24, 2025

Memory device including on-die-termination circuit

SAMSUNG ELECTRONICS CO LTD0 citations62
US12073898B2Aug 27, 2024

Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD0 citations62
US11804270B2Oct 31, 2023

Non-volatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11705166B2Jul 18, 2023

Memory device including on-die-termination circuit

SAMSUNG ELECTRONICS CO LTD0 citations62
USRE49206ESep 6, 2022

Nonvolatile memory device, memory system including the same and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11257531B2Feb 22, 2022

Nonvolatile memory including duty correction circuit and storage device including the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD0 citations62
US11114171B2Sep 7, 2021

Non-volatile memory device

SAMSUNG ELECTRONICS CO LTD1 citations62
US10964360B2Mar 30, 2021

Memory device including on-die-termination circuit

SAMSUNG ELECTRONICS CO LTD0 citations62
US10497412B2Dec 3, 2019

Method and circuit for self-training of a reference voltage and memory system including the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US10482937B2Nov 19, 2019

Memory devices and memory systems including the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US11244738B2Feb 8, 2022

Multi-chip package

SAMSUNG ELECTRONICS CO LTD1 citations61
US11017877B2May 25, 2021

Multi-chip package

SAMSUNG ELECTRONICS CO LTD1 citations61
US12079147B2Sep 3, 2024

Memory device for efficiently determining whether to perform re-training operation and memory system including the same

SAMSUNG ELECTRONICS CO LTD0 citations60
US11604714B2Mar 14, 2023

Memory device for efficiently determining whether to perform re-training operation and memory system including the same

SAMSUNG ELECTRONICS CO LTD0 citations60
US10916315B2Feb 9, 2021

Nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD1 citations59
US9461656B2Oct 4, 2016

Injection-locked phase locked loop circuits using delay locked loops

SAMSUNG ELECTRONICS CO LTD2 citations59
US10672436B2Jun 2, 2020

Memory device including on-die-termination circuit

SAMSUNG ELECTRONICS CO LTD0 citations52
US10439632B2Oct 8, 2019

Reference voltage generator and semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US10132865B2Nov 20, 2018

Semiconductor chip, test system, and method of testing the semiconductor chip

SAMSUNG ELECTRONICS CO LTD0 citations51
US10666249B2May 26, 2020

Semiconductor package

SAMSUNG ELECTRONICS CO LTD0 citations40
US10438635B2Oct 8, 2019

Apparatus and method of transmitting and receiving data, and semiconductor package including the same

SAMSUNG ELECTRONICS CO LTD0 citations40
US10171269B2Jan 1, 2019

Equalizer circuit and integrated circuit including the same

SAMSUNG ELECTRONICS CO LTD0 citations40
US9653132B2May 16, 2017

Semiconductor packages usable with semiconductor chips having different pad arrangements and electronic devices having the same

SAMSUNG ELECTRONICS CO LTD0 citations40
US9882565B2Jan 30, 2018

Buffer circuit and electric system including the same

SAMSUNG ELECTRONICS CO LTD0 citations37

HYUNDAI ELECTRONICS IND

1 patent

KANG DAE WOON

1 patent

IHM JEONG DON

1 patent