Inventor
IHM JEONG-DON
KR47 patents
⚠️ This page may combine multiple inventors who share the name “IHM JEONG-DON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
44 patentsUS11342038B2May 24, 2022
Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory
SAMSUNG ELECTRONICS CO LTD4 citations84
US11024400B2Jun 1, 2021
Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory
SAMSUNG ELECTRONICS CO LTD6 citations84
US10824575B2Nov 3, 2020
Buffer device supporting training operations for a plurality of memory devices, and memory module and memory system each including the buffer device
SAMSUNG ELECTRONICS CO LTD8 citations84
US10679717B2Jun 9, 2020
Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory
SAMSUNG ELECTRONICS CO LTD6 citations84
US10559373B2Feb 11, 2020
Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory
SAMSUNG ELECTRONICS CO LTD9 citations84
US10340022B2Jul 2, 2019
Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory
SAMSUNG ELECTRONICS CO LTD8 citations84
US10482935B2Nov 19, 2019
Nonvolatile memory including duty correction circuit and storage device including the nonvolatile memory
SAMSUNG ELECTRONICS CO LTD11 citations83
US10291275B2May 14, 2019
Reception interface circuits supporting multiple communication standards and memory systems including the same
SAMSUNG ELECTRONICS CO LTD12 citations83
US10014039B2Jul 3, 2018
Method and circuit for self-training of a reference voltage and memory system including the same
SAMSUNG ELECTRONICS CO LTD6 citations83
US11742040B2Aug 29, 2023
Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory
SAMSUNG ELECTRONICS CO LTD1 citations73
US11600539B2Mar 7, 2023
Defect detection structure of a semiconductor die, semiconductor device including the same and method of detecting defects in semiconductor die
SAMSUNG ELECTRONICS CO LTD2 citations72
US11062966B2Jul 13, 2021
Defect detection structure of a semiconductor die, semiconductor device including the same and method of detecting defects in semiconductor die
SAMSUNG ELECTRONICS CO LTD2 citations72
US10937474B2Mar 2, 2021
Nonvolatile memory including duty correction circuit and storage device including the nonvolatile memory
SAMSUNG ELECTRONICS CO LTD2 citations72
US10770149B2Sep 8, 2020
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD6 citations72
US10937471B2Mar 2, 2021
Non-volatile memory device and storage device including the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US10754563B2Aug 25, 2020
Memory device for efficiently determining whether to perform re-training operation and memory system including the same
SAMSUNG ELECTRONICS CO LTD6 citations71
US10741225B2Aug 11, 2020
Non-volatile memory device and storage device including the same
SAMSUNG ELECTRONICS CO LTD1 citations71
US10600454B2Mar 24, 2020
Non-volatile memory device and storage device including the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US9904310B2Feb 27, 2018
Regulator circuit and power system including the same
SAMSUNG ELECTRONICS CO LTD2 citations69
US12573445B2Mar 10, 2026
Memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12340867B2Jun 24, 2025
Memory device including on-die-termination circuit
SAMSUNG ELECTRONICS CO LTD0 citations62
US12073898B2Aug 27, 2024
Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memory
SAMSUNG ELECTRONICS CO LTD0 citations62
US11804270B2Oct 31, 2023
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11705166B2Jul 18, 2023
Memory device including on-die-termination circuit
SAMSUNG ELECTRONICS CO LTD0 citations62
USRE49206ESep 6, 2022
Nonvolatile memory device, memory system including the same and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11257531B2Feb 22, 2022
Nonvolatile memory including duty correction circuit and storage device including the nonvolatile memory
SAMSUNG ELECTRONICS CO LTD0 citations62
US11114171B2Sep 7, 2021
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD1 citations62
US10964360B2Mar 30, 2021
Memory device including on-die-termination circuit
SAMSUNG ELECTRONICS CO LTD0 citations62
US10497412B2Dec 3, 2019
Method and circuit for self-training of a reference voltage and memory system including the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US10482937B2Nov 19, 2019
Memory devices and memory systems including the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US11244738B2Feb 8, 2022
Multi-chip package
SAMSUNG ELECTRONICS CO LTD1 citations61
US11017877B2May 25, 2021
Multi-chip package
SAMSUNG ELECTRONICS CO LTD1 citations61
US12079147B2Sep 3, 2024
Memory device for efficiently determining whether to perform re-training operation and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11604714B2Mar 14, 2023
Memory device for efficiently determining whether to perform re-training operation and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US10916315B2Feb 9, 2021
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD1 citations59
US9461656B2Oct 4, 2016
Injection-locked phase locked loop circuits using delay locked loops
SAMSUNG ELECTRONICS CO LTD2 citations59
US10672436B2Jun 2, 2020
Memory device including on-die-termination circuit
SAMSUNG ELECTRONICS CO LTD0 citations52
US10439632B2Oct 8, 2019
Reference voltage generator and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10132865B2Nov 20, 2018
Semiconductor chip, test system, and method of testing the semiconductor chip
SAMSUNG ELECTRONICS CO LTD0 citations51
US10666249B2May 26, 2020
Semiconductor package
SAMSUNG ELECTRONICS CO LTD0 citations40
US10438635B2Oct 8, 2019
Apparatus and method of transmitting and receiving data, and semiconductor package including the same
SAMSUNG ELECTRONICS CO LTD0 citations40
US10171269B2Jan 1, 2019
Equalizer circuit and integrated circuit including the same
SAMSUNG ELECTRONICS CO LTD0 citations40
US9653132B2May 16, 2017
Semiconductor packages usable with semiconductor chips having different pad arrangements and electronic devices having the same
SAMSUNG ELECTRONICS CO LTD0 citations40
US9882565B2Jan 30, 2018
Buffer circuit and electric system including the same
SAMSUNG ELECTRONICS CO LTD0 citations37