P

Inventor

CHIANG KUO-CHANG

TW48 patents
⚠️ This page may combine multiple inventors who share the name “CHIANG KUO-CHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

38 patents
US11710790B2Jul 25, 2023

Memory array channel regions

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11903214B2Feb 13, 2024

Three-dimensional ferroelectric random access memory devices and methods of forming

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11640974B2May 2, 2023

Memory array isolation structures

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11723199B2Aug 8, 2023

Protective liner layers in 3D memory structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12557342B2Feb 17, 2026

Transistor, integrated circuit, and manufacturing method of transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12471346B2Nov 11, 2025

Memory array isolation structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12382639B2Aug 5, 2025

Three-dimensional memory device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363907B2Jul 15, 2025

Memory device comprising conductive pillars

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363906B2Jul 15, 2025

3D lateral patterning via selective deposition for ferroelectric devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12356628B2Jul 8, 2025

Memory device and method for making same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336183B2Jun 17, 2025

Three-dimensional ferroelectric random access memory devices and methods of forming

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302562B2May 13, 2025

Semiconductor structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12289890B2Apr 29, 2025

Method of fabricating transistor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12288820B2Apr 29, 2025

Transistor, integrated circuit, and manufacturing method of transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12274068B2Apr 8, 2025

Method of forming ferroelectric memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12219777B2Feb 4, 2025

Memory array source/drain electrode structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218250B2Feb 4, 2025

Oxide semiconductor transistor structure in 3-d device and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12167609B2Dec 10, 2024

Semiconductor structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12144182B2Nov 12, 2024

Memory device and method for making same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12125920B2Oct 22, 2024

Dual-layer channel transistor and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12069863B2Aug 20, 2024

Method of forming memory device comprising conductive pillars

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12068245B2Aug 20, 2024

Memory device, semiconductor device, and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12058860B2Aug 6, 2024

Memory device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11903213B2Feb 13, 2024

Memory device and method for making same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862726B2Jan 2, 2024

Transistor, integrated circuit, and manufacturing method of transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11856781B2Dec 26, 2023

Three-dimensional memory device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11729988B2Aug 15, 2023

Memory device comprising conductive pillars and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11729987B2Aug 15, 2023

Memory array source/drain electrode structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11696448B2Jul 4, 2023

Memory device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11646379B2May 9, 2023

Dual-layer channel transistor and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11569165B2Jan 31, 2023

Memory cell array, semiconductor device including the same, and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11545507B2Jan 3, 2023

Memory device and method for making same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12376347B2Jul 29, 2025

Ferroelectric memory device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12349362B2Jul 1, 2025

High selectivity isolation structure for improving effectiveness of 3D memory fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12342539B2Jun 24, 2025

Protective liner layers in 3D memory structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11723210B2Aug 8, 2023

High selectivity isolation structure for improving effectiveness of 3D memory fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12414295B2Sep 9, 2025

Semiconductor memory structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12272750B2Apr 8, 2025

Memory array channel regions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

INNOLUX CORP

10 patents