Inventor
CHIANG KUO-CHANG
TW48 patents
⚠️ This page may combine multiple inventors who share the name “CHIANG KUO-CHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
38 patentsUS11710790B2Jul 25, 2023
Memory array channel regions
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11903214B2Feb 13, 2024
Three-dimensional ferroelectric random access memory devices and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11640974B2May 2, 2023
Memory array isolation structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11723199B2Aug 8, 2023
Protective liner layers in 3D memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12557342B2Feb 17, 2026
Transistor, integrated circuit, and manufacturing method of transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12471346B2Nov 11, 2025
Memory array isolation structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12382639B2Aug 5, 2025
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363907B2Jul 15, 2025
Memory device comprising conductive pillars
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363906B2Jul 15, 2025
3D lateral patterning via selective deposition for ferroelectric devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12356628B2Jul 8, 2025
Memory device and method for making same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336183B2Jun 17, 2025
Three-dimensional ferroelectric random access memory devices and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302562B2May 13, 2025
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12289890B2Apr 29, 2025
Method of fabricating transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12288820B2Apr 29, 2025
Transistor, integrated circuit, and manufacturing method of transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12274068B2Apr 8, 2025
Method of forming ferroelectric memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12219777B2Feb 4, 2025
Memory array source/drain electrode structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218250B2Feb 4, 2025
Oxide semiconductor transistor structure in 3-d device and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12167609B2Dec 10, 2024
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12144182B2Nov 12, 2024
Memory device and method for making same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12125920B2Oct 22, 2024
Dual-layer channel transistor and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12069863B2Aug 20, 2024
Method of forming memory device comprising conductive pillars
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12068245B2Aug 20, 2024
Memory device, semiconductor device, and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12058860B2Aug 6, 2024
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11903213B2Feb 13, 2024
Memory device and method for making same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862726B2Jan 2, 2024
Transistor, integrated circuit, and manufacturing method of transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11856781B2Dec 26, 2023
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11729988B2Aug 15, 2023
Memory device comprising conductive pillars and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11729987B2Aug 15, 2023
Memory array source/drain electrode structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11696448B2Jul 4, 2023
Memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11646379B2May 9, 2023
Dual-layer channel transistor and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11569165B2Jan 31, 2023
Memory cell array, semiconductor device including the same, and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11545507B2Jan 3, 2023
Memory device and method for making same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12376347B2Jul 29, 2025
Ferroelectric memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12349362B2Jul 1, 2025
High selectivity isolation structure for improving effectiveness of 3D memory fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12342539B2Jun 24, 2025
Protective liner layers in 3D memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11723210B2Aug 8, 2023
High selectivity isolation structure for improving effectiveness of 3D memory fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12414295B2Sep 9, 2025
Semiconductor memory structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12272750B2Apr 8, 2025
Memory array channel regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
INNOLUX CORP
10 patentsUS10446604B2Oct 15, 2019
Display apparatus and fabricating method for display apparatus
INNOLUX CORP2 citations73
US9666727B2May 30, 2017
Display device
INNOLUX CORP3 citations73
US9841637B2Dec 12, 2017
Display panel
INNOLUX CORP2 citations72
US9711755B2Jul 18, 2017
Display panels
INNOLUX CORP3 citations72
US10748959B2Aug 18, 2020
Fabricating method for display apparatus
INNOLUX CORP0 citations52
US10304958B2May 28, 2019
Thin film transistor substrate and display panel using the same
INNOLUX CORP0 citations52
US9917114B2Mar 13, 2018
Display panel
INNOLUX CORP0 citations52
US9595537B2Mar 14, 2017
Display panel
INNOLUX CORP0 citations52
US9379245B2Jun 28, 2016
Thin film transistor substrate and display panel using the same
INNOLUX CORP0 citations52
US9608012B2Mar 28, 2017
Display panel
INNOLUX CORP0 citations51