Inventor · disambiguated record
True-Lon Lin
Also filed as: LIN TRUE-LON
19 granted patents·931 citations·filing 1988–2002
96Inventor score
Top patents by PatentIndex Score
19 records- 0197US5895951AMOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenchesMEGAMOS CORP·Filed 1996·Granted Apr 20, 1999·239 cites·11 claims
- 0292US5763915ADMOS transistors having trenched gate oxideMAGEMOS CORP·Filed 1996·Granted Jun 9, 1998·149 cites·7 claims
- 0390US5010037APinhole-free growth of epitaxial CoSi2 film on Si(111)CALIFORNIA INST OF TECHN·Filed 1988·Granted Apr 23, 1991·73 cites·14 claims
- 0486US5907169ASelf-aligned and process-adjusted high density power transistor with gate sidewalls provided with punch through prevention and reduced JFET resistanceMEGAMOS CORP·Filed 1997·Granted May 25, 1999·65 cites·20 claims
- 0583US4990988ALaterally stacked Schottky diodes for infrared sensor applicationsNASA·Filed 1989·Granted Feb 5, 1991·43 cites·6 claims
- 0681US6919168B2Masking methods and etching sequences for patterning electrodes of high density RAM capacitorsAPPLIED MATERIALS INC·Filed 2002·Granted Jul 19, 2005·31 cites·28 claims
- 0780US5986304APunch-through prevention in trenched DMOS with poly-silicon layer covering trench cornersMEGAMOS CORP·Filed 1997·Granted Nov 16, 1999·47 cites·9 claims
- 0873US6734452B2Infrared radiation-detecting deviceCALIFORNIA INST OF TECHN·Filed 2001·Granted May 11, 2004·15 cites·38 claims
- 0972US5844277APower MOSFETs and cell topologyMAGEPOWER SEMICONDUCTOR CORP·Filed 1996·Granted Dec 1, 1998·33 cites·1 claims
- 1070US6104060ACost savings for manufacturing planar MOSFET devices achieved by implementing an improved device structure and fabrication process eliminating passivation layer and/or field plateMEGAMOS CORP·Filed 1996·Granted Aug 15, 2000·40 cites·1 claims
- 1170US5729037AMOSFET structure and fabrication process for decreasing threshold voltageMEGAMOS CORP·Filed 1996·Granted Mar 17, 1998·30 cites·7 claims
- 1269US5923065APower MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savingsMEGAMOS CORP·Filed 1996·Granted Jul 13, 1999·30 cites·6 claims
- 1367US5668026ADMOS fabrication process implemented with reduced number of masksMEGAMOS CORP·Filed 1996·Granted Sep 16, 1997·34 cites·7 claims
- 1466US5731611AMOSFET transistor cell manufactured with selectively implanted punch through prevent and threshold reductoin zonesMEGAMOS CORP·Filed 1996·Granted Mar 24, 1998·26 cites·12 claims
- 1565US5877529AMosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggednessMEGAMOS CORP·Filed 1997·Granted Mar 2, 1999·24 cites·16 claims
- 1658US6211529B1Infrared radiation-detecting deviceCALIFORNIA INST OF TECHN·Filed 1997·Granted Apr 3, 2001·19 cites·32 claims
- 1753US5883416AGate-contact structure to prevent contact metal penetration through gate layer without affecting breakdown voltageMEGAMOS CORP·Filed 1997·Granted Mar 16, 1999·14 cites·8 claims
- 1845US5075243AFabrication of nanometer single crystal metallic CoSi2 structures on SiNASA·Filed 1991·Granted Dec 24, 1991·15 cites·16 claims
- 1933US5648297ALong-wavelength PTSI infrared detectors and method of fabrication thereofUS ARMY·Filed 1996·Granted Jul 15, 1997·4 cites·12 claims
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