Inventor

WANG JUNLI

US455 patents

⚠️ This page may combine multiple inventors who share the name “WANG JUNLI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG JUNLI

IBM

Gate metal patterning for tight pitch applications

Self-aligned air gap spacer for nanosheet CMOS devices

Replacement metal gate structures

Air-gap top spacer and self-aligned metal gate for vertical fets

Airgap formation between source/drain contacts and gates

Method and structure for forming gate contact above active area with trench silicide

Extra gate device for nanosheet

Replacement metal gate structures

Shared contact trench comprising dual silicide layers and dual epitaxial layers for source/drain layers of NFET and PFET devices

Leakage control for gate-all-around field-effect transistor devices

Multiple width nanosheet devices

Self-aligned air gap spacer for nanosheet CMOS devices

Integration of super via structure in BEOL

Integration of super via structure in BEOL

Self-aligned shallow trench isolation and doping for vertical fin transistors

Bottom source/drain silicidation for vertical field-effect transistor (FET)

Formation of a bottom source-drain for vertical field-effect transistors

Contact having self-aligned air gap spacers

Vertical transistor including a bottom source/drain region, a gate structure, and an air gap formed between the bottom source/drain region and the gate structure

Bulk nanosheet with dielectric isolation

Vertical transistor with a body contact for back-biasing

FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure

Source and drain epitaxial semiconductor material integration for high voltage semiconductor devices

Semiconductor device including finFET and fin varactor

Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains

Replacement metal gate structures

Replacement metal gate structures

Replacement metal gate structures

Replacement metal gate structures

Replacement metal gate structures

Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer process

Precise control of vertical transistor gate length

Vertical FET with strained channel

Replacement metal gate structures

Nanowire isolation scheme to reduce parasitic capacitance

FinFET devices

FinFET devices

Gate stack integrated metal resistors

Method and structure for forming gate contact above active area with trench silicide

Integrated formation of Si and SiGe fins

Self-aligned punch through stopper liner for bulk FinFET

Semiconductor device with local connection

Complementary field-effect transistors

LEOBANDUNG EFFENDI

Field effect transistor devices having thick gate dielectric layers and thin gate dielectric layers

CHENG KANGGUO

Replacement metal gate processing with reduced interlevel dielectric layer etch rate

ST MICROELECTRONICS INC

Method to form finFET/trigate devices on bulk semiconductor wafers

SONY CORP

Semiconductor device with PMOS and NMOS transistors

WANG JUNLI

Apparatus for carrying/storing baked goods and the like

GLOBALFOUNDRIES INC

Vertical-transport field-effect transistors with a damascene gate strap

TESSERA LLC

FinFET devices