Replacement metal gate structures

Abstract

Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

What is claimed: 
     
       1. A replacement gate structure, comprising:
 a lower spacer; 
 a gate dielectric material lining a lower spacer and over a portion of a fin structure; 
 an upper spacer above the lower spacer; 
 a workfunction material on the gate dielectric material having an open seam; and 
 a replacement gate material plugging the open seam of the workfunction material and above the workfunction material, the replacement gate material being in direct contact with the upper spacer. 
 
     
     
       2. The replacement gate structure of  claim 1 , wherein the lower spacer is a first material and the upper spacer is a different material than the first material. 
     
     
       3. The replacement gate structure of  claim 1 , wherein the upper spacer is above the gate dielectric material which is lining the lower spacer. 
     
     
       4. The replacement gate structure of  claim 1 , further comprising a cap material on the replacement gate material, encapsulating an upper portion of the replacement gate material and in direct contact with sidewalls of the upper spacer. 
     
     
       5. The replacement gate structure of  claim 4 , further comprising a self-aligned contact separated from the replacement gate structure by the upper spacer. 
     
     
       6. The structure of  claim 4 , wherein the cap material is self aligned. 
     
     
       7. The structure of  claim 6 , wherein the cap material is nitride. 
     
     
       8. The structure of  claim 4 , wherein the upper spacer is in direct contact with the cap material, the replacement gate material and interlevel dielectric material. 
     
     
       9. The structure of  claim 8 , wherein the gate dielectric material is in direct contact with the workfunction material, the lower spacer and the fin structure. 
     
     
       10. The structure of  claim 9 , wherein the workfunction material is completely below the upper spacer. 
     
     
       11. The structure of  claim 1 , wherein the upper spacer prevents shorting with the contact material. 
     
     
       12. The structure of  claim 1 , wherein the upper spacer is resistive to a self-aligned contact etching process. 
     
     
       13. The structure of  claim 1 , wherein an upper portion of the lower spacer is provided at a level of the seam.