Inventor
WONG WEI-ZHE
TW29 patents
⚠️ This page may combine multiple inventors who share the name “WONG WEI-ZHE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
POWERCHIP SEMICONDUCTOR CORP
14 patentsUS7436028B2Oct 14, 2008
One-time programmable read only memory and operating method thereof
POWERCHIP SEMICONDUCTOR CORP20 citations92
US6898126B1May 24, 2005
Method of programming a flash memory through boosting a voltage level of a source line
POWERCHIP SEMICONDUCTOR CORP39 citations92
US7397080B2Jul 8, 2008
Non-volatile memory
POWERCHIP SEMICONDUCTOR CORP9 citations84
US7291882B2Nov 6, 2007
Programmable and erasable digital switch device and fabrication method and operating method thereof
POWERCHIP SEMICONDUCTOR CORP8 citations74
US7154142B2Dec 26, 2006
Non-volatile memory device and manufacturing method and operating method thereof
POWERCHIP SEMICONDUCTOR CORP9 citations74
US7491607B2Feb 17, 2009
Method of fabricating flash memory cell
POWERCHIP SEMICONDUCTOR CORP3 citations63
US7462902B2Dec 9, 2008
Nonvolatile memory
POWERCHIP SEMICONDUCTOR CORP2 citations63
US7391078B2Jun 24, 2008
Non-volatile memory and manufacturing and operating method thereof
POWERCHIP SEMICONDUCTOR CORP5 citations63
US7663904B2Feb 16, 2010
Operating method of one-time programmable read only memory
POWERCHIP SEMICONDUCTOR CORP1 citations52
US7336539B2Feb 26, 2008
Method of operating flash memory cell
POWERCHIP SEMICONDUCTOR CORP0 citations52
US7335559B2Feb 26, 2008
Fabricating method of non-volatile memory
POWERCHIP SEMICONDUCTOR CORP0 citations52
US7274062B2Sep 25, 2007
Non-volatile memory and fabricating method and operating method thereof
POWERCHIP SEMICONDUCTOR CORP0 citations52
US7235839B2Jun 26, 2007
Flash memory cell and fabricating method thereof
POWERCHIP SEMICONDUCTOR CORP0 citations52
US7429503B2Sep 30, 2008
Method of manufacturing well pick-up structure of non-volatile memory
POWERCHIP SEMICONDUCTOR CORP0 citations41
EMEMORY TECHNOLOGY INC
13 patentsUS9613714B1Apr 4, 2017
One time programming memory cell and memory array for physically unclonable function technology and associated random code generating method
EMEMORY TECHNOLOGY INC101 citations99
US6812083B2Nov 2, 2004
Fabrication method for non-volatile memory
EMEMORY TECHNOLOGY INC25 citations92
US10181357B2Jan 15, 2019
Code generating apparatus and one time programming block
EMEMORY TECHNOLOGY INC6 citations84
US9620176B2Apr 11, 2017
One-time programmable memory array having small chip area
EMEMORY TECHNOLOGY INC13 citations84
US6822286B2Nov 23, 2004
Cmos-compatible read only memory and method for fabricating the same
EMEMORY TECHNOLOGY INC18 citations84
US9634015B2Apr 25, 2017
Antifuse-type one time programming memory cell and array structure with same
EMEMORY TECHNOLOGY INC10 citations82
US6750504B2Jun 15, 2004
Low voltage single-poly flash memory cell and array
EMEMORY TECHNOLOGY INC9 citations74
US10020268B2Jul 10, 2018
Random number generator device and control method thereof
EMEMORY TECHNOLOGY INC5 citations73
US9799662B2Oct 24, 2017
Antifuse-type one time programming memory cell and array structure with same
EMEMORY TECHNOLOGY INC6 citations73
US9601499B2Mar 21, 2017
One-time programmable memory cell capable of reducing leakage current and preventing slow bit response, and method for programming a memory array comprising the same
EMEMORY TECHNOLOGY INC6 citations73
US10476680B2Nov 12, 2019
Electronic device with self-protection and anti-cloning capabilities and related method
EMEMORY TECHNOLOGY INC1 citations62
US10685728B2Jun 16, 2020
Code generating apparatus and one time programming block
EMEMORY TECHNOLOGY INC0 citations52
US9799410B2Oct 24, 2017
Method for programming antifuse-type one time programmable memory cell
EMEMORY TECHNOLOGY INC0 citations52