Inventor
KIM SUNG-BONG
KR34 patents
⚠️ This page may combine multiple inventors who share the name “KIM SUNG-BONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
28 patentsUS6806180B2Oct 19, 2004
Unitary interconnection structures integral with a dielectric layer
SAMSUNG ELECTRONICS CO LTD52 citations96
US5495244AFeb 27, 1996
Device for encoding and decoding transmission signals through adaptive selection of transforming methods
SAMSUNG ELECTRONICS CO LTD92 citations96
US9324850B2Apr 26, 2016
Integrated circuit devices and fabricating method thereof
SAMSUNG ELECTRONICS CO LTD15 citations93
US6335279B2Jan 1, 2002
Method of forming contact holes of semiconductor device
SAMSUNG ELECTRONICS CO LTD53 citations93
US7312144B2Dec 25, 2007
Unitary interconnection structures integral with a dielectric layer and fabrication methods thereof
SAMSUNG ELECTRONICS CO LTD24 citations92
US7183662B2Feb 27, 2007
Memory devices with memory cell transistors having gate sidewell spacers with different dielectric properties
SAMSUNG ELECTRONICS CO LTD18 citations92
US6828210B2Dec 7, 2004
Method of forming a device isolation trench in an integrated circuit device
SAMSUNG ELECTRONICS CO LTD21 citations92
US6313510B1Nov 6, 2001
Integrated circuits including metal silicide contacts extending between a gate electrode and a source/drain region
SAMSUNG ELECTRONICS CO LTD23 citations92
US6147385ANov 14, 2000
CMOS static random access memory devices
SAMSUNG ELECTRONICS CO LTD27 citations92
US5851868ADec 22, 1998
Methods of forming integrated decoupling capacitors
SAMSUNG ELECTRONICS CO LTD27 citations92
US6680538B2Jan 20, 2004
Semiconductor device for suppressing detachment of conductive layer
SAMSUNG ELECTRONICS CO LTD35 citations90
US6448651B1Sep 10, 2002
Semiconductor device having a multi-level metallization and its fabricating method
SAMSUNG ELECTRONICS CO LTD17 citations84
US6767814B2Jul 27, 2004
Semiconductor device having silicide thin film and method of forming the same
SAMSUNG ELECTRONICS CO LTD14 citations82
US6169020B1Jan 2, 2001
Methods of fabricating integrated circuits including metal silicide contacts extending between a gate electrode and a source/drain region
SAMSUNG ELECTRONICS CO LTD6 citations74
US9673099B2Jun 6, 2017
Method of fabricating integrated circuit devices
SAMSUNG ELECTRONICS CO LTD4 citations73
US6870231B2Mar 22, 2005
Layouts for CMOS SRAM cells and devices
SAMSUNG ELECTRONICS CO LTD11 citations73
US6645849B2Nov 11, 2003
Method for manufacturing semiconductor device for suppressing detachment of conductive layer
SAMSUNG ELECTRONICS CO LTD8 citations71
USRE49988EMay 28, 2024
Integrated circuit devices
SAMSUNG ELECTRONICS CO LTD0 citations63
US7141851B2Nov 28, 2006
Transistors having a recessed channel region
SAMSUNG ELECTRONICS CO LTD3 citations63
US6265284B1Jul 24, 2001
Method of manufacturing a trench isolation region in a semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations63
US6165900ADec 26, 2000
Method for manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations63
US6133141AOct 17, 2000
Methods of forming electrical connections between conductive layers
SAMSUNG ELECTRONICS CO LTD6 citations63
US6653238B2Nov 25, 2003
Method for forming semiconductor device having high-density contacts
SAMSUNG ELECTRONICS CO LTD6 citations62
US7405450B2Jul 29, 2008
Semiconductor devices having high conductivity gate electrodes with conductive line patterns thereon
SAMSUNG ELECTRONICS CO LTD3 citations61
US7385260B2Jun 10, 2008
Semiconductor device having silicide thin film and method of forming the same
SAMSUNG ELECTRONICS CO LTD4 citations60
US7560353B2Jul 14, 2009
Methods of fabricating memory devices with memory cell transistors having gate sidewall spacers with different dielectric properties
SAMSUNG ELECTRONICS CO LTD0 citations52
US6288926B1Sep 11, 2001
Static semiconductor memory device and fabricating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US10109518B1Oct 23, 2018
Pickup unit and pickup system of semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations36