Inventor
STEPHENS JASON E
US17 patents
⚠️ This page may combine multiple inventors who share the name “STEPHENS JASON E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
14 patentsUS9202751B2Dec 1, 2015
Transistor contacts self-aligned in two dimensions
GLOBALFOUNDRIES INC13 citations92
US9825031B1Nov 21, 2017
Methods of forming a high-k contact liner to improve effective via separation distance and the resulting devices
GLOBALFOUNDRIES INC23 citations90
US8839168B2Sep 16, 2014
Self-aligned double patterning via enclosure design
GLOBALFOUNDRIES INC11 citations84
US9236437B2Jan 12, 2016
Method for creating self-aligned transistor contacts
GLOBALFOUNDRIES INC11 citations83
US9224617B2Dec 29, 2015
Forming cross-coupled line segments
GLOBALFOUNDRIES INC13 citations83
US9660040B2May 23, 2017
Transistor contacts self-aligned two dimensions
GLOBALFOUNDRIES INC2 citations73
US9502528B2Nov 22, 2016
Borderless contact formation through metal-recess dual cap integration
GLOBALFOUNDRIES INC3 citations72
US10522403B2Dec 31, 2019
Middle of the line self-aligned direct pattern contacts
GLOBALFOUNDRIES INC1 citations62
US9412655B1Aug 9, 2016
Forming merged lines in a metallization layer by replacing sacrificial lines with conductive lines
GLOBALFOUNDRIES INC2 citations62
US9472455B2Oct 18, 2016
Methods of cross-coupling line segments on a wafer
GLOBALFOUNDRIES INC2 citations61
US10056373B2Aug 21, 2018
Transistor contacts self-aligned in two dimensions
GLOBALFOUNDRIES INC0 citations52
US10741439B2Aug 11, 2020
Merge mandrel features
GLOBALFOUNDRIES INC0 citations51
US10340180B1Jul 2, 2019
Merge mandrel features
GLOBALFOUNDRIES INC0 citations51
US9461128B2Oct 4, 2016
Method for creating self-aligned transistor contacts
GLOBALFOUNDRIES INC0 citations51