P

Inventor

LEE JAEDUK

KR42 patents
⚠️ This page may combine multiple inventors who share the name “LEE JAEDUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

31 patents
US9595346B2Mar 14, 2017

3-Dimensional semiconductor memory device and operating method thereof

SAMSUNG ELECTRONICS CO LTD22 citations94
US9515087B2Dec 6, 2016

Three-dimensional semiconductor memory device

SAMSUNG ELECTRONICS CO LTD32 citations93
US10229927B2Mar 12, 2019

Semiconductor device and method of manufacturing the semiconductor device

SAMSUNG ELECTRONICS CO LTD18 citations85
US10002877B2Jun 19, 2018

Three-dimensional semiconductor devices and fabricating methods thereof

SAMSUNG ELECTRONICS CO LTD8 citations84
US10032789B2Jul 24, 2018

Three-dimensional semiconductor memory device

SAMSUNG ELECTRONICS CO LTD10 citations82
US9837429B2Dec 5, 2017

Method of fabricating a three-dimensional semiconductor memory device having a plurality of memory blocks on a peripheral logic structure

SAMSUNG ELECTRONICS CO LTD5 citations82
US10566233B2Feb 18, 2020

Semiconductor device having interconnection structure

SAMSUNG ELECTRONICS CO LTD1 citations73
US11380706B2Jul 5, 2022

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US10396088B2Aug 27, 2019

Three-dimensional semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations72
US10332902B2Jun 25, 2019

Three-dimensional semiconductor memory device including vertically stacked electrodes

SAMSUNG ELECTRONICS CO LTD3 citations71
US11348930B2May 31, 2022

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations70
US11257841B2Feb 22, 2022

Three-dimensional semiconductor memory device

SAMSUNG ELECTRONICS CO LTD3 citations70
US10396093B2Aug 27, 2019

Three-dimensional semiconductor memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD4 citations70
US11444094B2Sep 13, 2022

Three-dimensional semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations69
US11569262B2Jan 31, 2023

Semiconductor device including vertical memory structure

SAMSUNG ELECTRONICS CO LTD2 citations65
US11974434B2Apr 30, 2024

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations61
US11895837B2Feb 6, 2024

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations60
US11699490B2Jul 11, 2023

Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device including the same

SAMSUNG ELECTRONICS CO LTD0 citations57
US11916078B2Feb 27, 2024

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations56
US11380711B2Jul 5, 2022

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations56
US12557291B2Feb 17, 2026

Semiconductor device with variable gate-to-channel spacing

SAMSUNG ELECTRONICS CO LTD0 citations55
US11950417B2Apr 2, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations55
US10707126B2Jul 7, 2020

Semiconductor device having interconnection structure

SAMSUNG ELECTRONICS CO LTD0 citations52
US12131781B2Oct 29, 2024

Semiconductor devices and data storage systems including the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US8368138B2Feb 5, 2013

Non-volatile memory devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US12557280B2Feb 17, 2026

Three-dimensional semiconductor memory device with increased electron mobility and electronic system including the same

SAMSUNG ELECTRONICS CO LTD0 citations47
US12476185B2Nov 18, 2025

Semiconductor device and electronic system including the same

SAMSUNG ELECTRONICS CO LTD0 citations47
US12080799B2Sep 3, 2024

Semiconductor devices with enhanced substrate isolation

SAMSUNG ELECTRONICS CO LTD0 citations46
US11966625B2Apr 23, 2024

Memory device and operating method for setting and repairing data errors

SAMSUNG ELECTRONICS CO LTD0 citations46
US11894079B2Feb 6, 2024

Memory controller, memory system with improved threshold voltage distribution characteristics, and operation method

SAMSUNG ELECTRONICS CO LTD0 citations45
US9082750B2Jul 14, 2015

Non-volatile memory devices having reduced susceptibility to leakage of stored charges

SAMSUNG ELECTRONICS CO LTD0 citations42

PARK JINTAEK

4 patents

LEE JAEDUK

3 patents

LEE DOHYUN

2 patents

LEE JAEGOO

1 patent

KANAMORI KOHJI

1 patent