Inventor
LEE JAEDUK
KR42 patents
⚠️ This page may combine multiple inventors who share the name “LEE JAEDUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
31 patentsUS9595346B2Mar 14, 2017
3-Dimensional semiconductor memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD22 citations94
US9515087B2Dec 6, 2016
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD32 citations93
US10229927B2Mar 12, 2019
Semiconductor device and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD18 citations85
US10002877B2Jun 19, 2018
Three-dimensional semiconductor devices and fabricating methods thereof
SAMSUNG ELECTRONICS CO LTD8 citations84
US10032789B2Jul 24, 2018
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD10 citations82
US9837429B2Dec 5, 2017
Method of fabricating a three-dimensional semiconductor memory device having a plurality of memory blocks on a peripheral logic structure
SAMSUNG ELECTRONICS CO LTD5 citations82
US10566233B2Feb 18, 2020
Semiconductor device having interconnection structure
SAMSUNG ELECTRONICS CO LTD1 citations73
US11380706B2Jul 5, 2022
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US10396088B2Aug 27, 2019
Three-dimensional semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US10332902B2Jun 25, 2019
Three-dimensional semiconductor memory device including vertically stacked electrodes
SAMSUNG ELECTRONICS CO LTD3 citations71
US11348930B2May 31, 2022
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations70
US11257841B2Feb 22, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD3 citations70
US10396093B2Aug 27, 2019
Three-dimensional semiconductor memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD4 citations70
US11444094B2Sep 13, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations69
US11569262B2Jan 31, 2023
Semiconductor device including vertical memory structure
SAMSUNG ELECTRONICS CO LTD2 citations65
US11974434B2Apr 30, 2024
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US11895837B2Feb 6, 2024
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11699490B2Jul 11, 2023
Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device including the same
SAMSUNG ELECTRONICS CO LTD0 citations57
US11916078B2Feb 27, 2024
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations56
US11380711B2Jul 5, 2022
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations56
US12557291B2Feb 17, 2026
Semiconductor device with variable gate-to-channel spacing
SAMSUNG ELECTRONICS CO LTD0 citations55
US11950417B2Apr 2, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations55
US10707126B2Jul 7, 2020
Semiconductor device having interconnection structure
SAMSUNG ELECTRONICS CO LTD0 citations52
US12131781B2Oct 29, 2024
Semiconductor devices and data storage systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US8368138B2Feb 5, 2013
Non-volatile memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12557280B2Feb 17, 2026
Three-dimensional semiconductor memory device with increased electron mobility and electronic system including the same
SAMSUNG ELECTRONICS CO LTD0 citations47
US12476185B2Nov 18, 2025
Semiconductor device and electronic system including the same
SAMSUNG ELECTRONICS CO LTD0 citations47
US12080799B2Sep 3, 2024
Semiconductor devices with enhanced substrate isolation
SAMSUNG ELECTRONICS CO LTD0 citations46
US11966625B2Apr 23, 2024
Memory device and operating method for setting and repairing data errors
SAMSUNG ELECTRONICS CO LTD0 citations46
US11894079B2Feb 6, 2024
Memory controller, memory system with improved threshold voltage distribution characteristics, and operation method
SAMSUNG ELECTRONICS CO LTD0 citations45
US9082750B2Jul 14, 2015
Non-volatile memory devices having reduced susceptibility to leakage of stored charges
SAMSUNG ELECTRONICS CO LTD0 citations42
PARK JINTAEK
4 patentsUS9601204B2Mar 21, 2017
Three-dimensional semiconductor devices and fabricating methods thereof
PARK JINTAEK5 citations84
US9337207B2May 10, 2016
Semiconductor devices including word line interconnecting structures
PARK JINTAEK14 citations84
US9224429B2Dec 29, 2015
Three-dimensional semiconductor devices and methods of fabricating the same
PARK JINTAEK5 citations84
US9019739B2Apr 28, 2015
Three-dimensional semiconductor devices and methods of fabricating the same
PARK JINTAEK14 citations84
LEE JAEDUK
3 patentsUS10056404B2Aug 21, 2018
Semiconductor memory devices having closely spaced bit lines
LEE JAEDUK8 citations82
US9299707B2Mar 29, 2016
Three-dimensional semiconductor devices with current path selection structure
LEE JAEDUK3 citations71
US8791520B2Jul 29, 2014
Non-volatile memory devices having a floating gate cap between a floating gate and a gate insulating layer
LEE JAEDUK0 citations49