Inventor
HELM MARK A
US77 patents
⚠️ This page may combine multiple inventors who share the name “HELM MARK A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
43 patentsUS7112488B2Sep 26, 2006
Source lines for NAND memory devices
MICRON TECHNOLOGY INC28 citations93
US6635530B2Oct 21, 2003
Methods of forming gated semiconductor assemblies
MICRON TECHNOLOGY INC16 citations93
US6268250B1Jul 31, 2001
Efficient fabrication process for dual well type structures
MICRON TECHNOLOGY INC30 citations93
US9070442B2Jun 30, 2015
Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods
MICRON TECHNOLOGY INC18 citations92
US10014061B1Jul 3, 2018
Methods and apparatus having multiple select gates of different ranges of threshold voltages connected in series with memory cells
MICRON TECHNOLOGY INC7 citations84
US9607692B2Mar 28, 2017
Threshold voltage distribution determination
MICRON TECHNOLOGY INC11 citations84
US8374028B2Feb 12, 2013
Sense operation in a memory device
MICRON TECHNOLOGY INC5 citations84
US9947418B2Apr 17, 2018
Boosted channel programming of memory
MICRON TECHNOLOGY INC13 citations83
US9159736B2Oct 13, 2015
Data line arrangement and pillar arrangement in apparatuses
MICRON TECHNOLOGY INC9 citations82
US7274065B2Sep 25, 2007
Source lines for NAND memory devices
MICRON TECHNOLOGY INC5 citations74
US7262102B2Aug 28, 2007
Reduction of field edge thinning in peripheral devices
MICRON TECHNOLOGY INC5 citations74
US7241662B2Jul 10, 2007
Reduction of field edge thinning in peripheral devices
MICRON TECHNOLOGY INC5 citations74
US6861697B1Mar 1, 2005
Interconnecting conductive layers of memory devices
MICRON TECHNOLOGY INC7 citations74
US6756634B2Jun 29, 2004
Gated semiconductor assemblies
MICRON TECHNOLOGY INC12 citations74
US6645814B1Nov 11, 2003
Method of forming an array of FLASH field effect transistors and circuitry peripheral to such array
MICRON TECHNOLOGY INC10 citations74
US6396100B2May 28, 2002
Efficient fabrication process for dual well type structures
MICRON TECHNOLOGY INC6 citations74
US11983067B2May 14, 2024
Adjustment of code rate as function of memory endurance state metric
MICRON TECHNOLOGY INC2 citations73
US11829245B2Nov 28, 2023
Multi-layer code rate architecture for copyback between partitions with different code rates
MICRON TECHNOLOGY INC3 citations73
US11823742B2Nov 21, 2023
Acceleration of data queries in memory
MICRON TECHNOLOGY INC2 citations73
US11640262B2May 2, 2023
Implementing variable number of bits per cell on storage devices
MICRON TECHNOLOGY INC3 citations73
US11385819B2Jul 12, 2022
Separate partition for buffer and snapshot memory
MICRON TECHNOLOGY INC2 citations73
US11360700B2Jun 14, 2022
Partitions within snapshot memory for buffer and snapshot memory
MICRON TECHNOLOGY INC2 citations73
US11288160B2Mar 29, 2022
Threshold voltage distribution adjustment for buffer
MICRON TECHNOLOGY INC4 citations73
US11289166B2Mar 29, 2022
Acceleration of data queries in memory
MICRON TECHNOLOGY INC4 citations73
US10289484B2May 14, 2019
Apparatuses and methods for generating probabilistic information with current integration sensing
MICRON TECHNOLOGY INC3 citations73
US9431421B2Aug 30, 2016
Data line arrangement and pillar arrangement in apparatuses
MICRON TECHNOLOGY INC3 citations71
US12326782B2Jun 10, 2025
Adjustment of code rate as function of memory endurance state metric
MICRON TECHNOLOGY INC0 citations63
US12086466B2Sep 10, 2024
Implementing variable number of bits per cell on storage devices
MICRON TECHNOLOGY INC0 citations63
US10891191B2Jan 12, 2021
Apparatuses and methods for generating probabilistic information with current integration sensing
MICRON TECHNOLOGY INC0 citations63
US9251860B2Feb 2, 2016
Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods
MICRON TECHNOLOGY INC2 citations63
US9047972B2Jun 2, 2015
Methods, devices, and systems for data sensing
MICRON TECHNOLOGY INC3 citations63
US7176086B2Feb 13, 2007
Interconnecting conductive layers of memory devices
MICRON TECHNOLOGY INC2 citations63
US6759298B2Jul 6, 2004
Methods of forming an array of flash field effect transistors and circuitry peripheral to such array
MICRON TECHNOLOGY INC6 citations63
US6746921B2Jun 8, 2004
Method of forming an array of FLASH field effect transistors and circuitry peripheral to such array
MICRON TECHNOLOGY INC4 citations63
US11899966B2Feb 13, 2024
Implementing fault tolerant page stripes on low density memory systems
MICRON TECHNOLOGY INC0 citations62
US11789629B2Oct 17, 2023
Separate partition for buffer and snapshot memory
MICRON TECHNOLOGY INC0 citations62
US11775208B2Oct 3, 2023
Partitions within snapshot memory for buffer and snapshot memory
MICRON TECHNOLOGY INC0 citations62
US11694763B2Jul 4, 2023
Read voltage calibration for copyback operation
MICRON TECHNOLOGY INC0 citations62
US11663104B2May 30, 2023
Threshold voltage distribution adjustment for buffer
MICRON TECHNOLOGY INC0 citations62
US11487436B2Nov 1, 2022
Trims corresponding to logical unit quantity
MICRON TECHNOLOGY INC0 citations62
US11481273B2Oct 25, 2022
Partitioned memory having error detection capability
MICRON TECHNOLOGY INC0 citations62
US11449271B2Sep 20, 2022
Implementing fault tolerant page stripes on low density memory systems
MICRON TECHNOLOGY INC0 citations62
US11309052B2Apr 19, 2022
Read voltage calibration for copyback operation
MICRON TECHNOLOGY INC0 citations62
GOLDMAN MATTHEW
2 patentsLODESTAR LICENSING GROUP LLC
2 patentsCYPRESS SEMICONDUCTOR CORP
1 patentGODA AKIRA
1 patentHELM MARK A
1 patentShowing the top 50 of 77 patents by PatentIndex Score.