Inventor · disambiguated record
Madhan Raj
Also filed as: RAJ MADHAN · RAJ MADHAN M · RAJ MADHAN MOTHI
12 granted patents·4 pending applications·8 citations·filing 2009–2020
84Inventor score
Top patents by PatentIndex Score
16 records- 0175US10319829B2Method and system for in-situ etch and regrowth in gallium nitride based devicesNEXGEN POWER SYSTEMS INC·Filed 2017·Granted Jun 11, 2019·1 cites·17 claims
- 0275US8829574B2Method and system for a GaN vertical JFET with self-aligned source and gateDISNEY DONALD R·Filed 2011·Granted Sep 9, 2014·2 cites·6 claims
- 0370US8643134B2GaN-based Schottky barrier diode with field plateRAJ MADHAN·Filed 2011·Granted Feb 4, 2014·3 cites·7 claims
- 0466US9123533B2Method and system for in-situ etch and regrowth in gallium nitride based devicesBOUR DAVID P·Filed 2012·Granted Sep 1, 2015·1 cites·13 claims
- 0558US8969994B2Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode by regrowth and etch backRAJ MADHAN M·Filed 2012·Granted Mar 3, 2015·1 cites·14 claims
- 0657US9450112B2GaN-based Schottky barrier diode with algan surface layerAVOGY INC·Filed 2014·Granted Sep 20, 2016·0 cites·12 claims
- 0756US9117850B2Method and system for a gallium nitride vertical JFET with self-aligned source and gateAVOGY INC·Filed 2014·Granted Aug 25, 2015·0 cites·15 claims
- 0850US2016190296A1Gallium nitride based high electron mobility transistor including an aluminum gallium nitride barrier layerAVOGY INC·Filed 2015·Application pending·0 cites
- 0950US2016190276A1Method and system for in-situ etch and regrowth in gallium nitride based devicesAVOGY INC·Filed 2015·Application pending·0 cites
- 1049US2014051236A1Gan-based schottky barrier diode with field plateAVOGY INC·Filed 2013·Application pending·0 cites
- 1148US8836071B2Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layerBROWN RICHARD J·Filed 2011·Granted Sep 16, 2014·0 cites·28 claims
- 1247US2015340514A1Method and system for a gallium nitride vertical jfet with self-aligned source and gateAVOGY INC·Filed 2015·Application pending·0 cites
- 1346US9397186B2Method of fabricating a gallium nitride merged P-I-N schottky (MPS) diode by regrowth and etch backAVOGY INC·Filed 2015·Granted Jul 19, 2016·0 cites·13 claims
- 1446US8073021B2Methods for obtaining stabilized output beams from frequency converted light sources and frequency converted light sources utilizing the sameBHATIA VIKRAM·Filed 2009·Granted Dec 6, 2011·0 cites·20 claims
- 1544US11404601B2Conductive micro LED architecture for on-wafer testingAPPLE INC·Filed 2020·Granted Aug 2, 2022·0 cites·12 claims
- 1639US8558242B2Vertical GaN-based metal insulator semiconductor FETBROWN RICHARD J·Filed 2011·Granted Oct 15, 2013·0 cites·20 claims
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