Inventor · disambiguated record
Aaron D. Lilak
Also filed as: LILAK AARON · LILAK AARON D · LILAK AARON DOUGLAS
118 granted patents·22 pending applications·161 citations·filing 2003–2025
99Inventor score
Top patents by PatentIndex Score
140 records- 0199US11239236B2Forksheet transistor architecturesINTEL CORP·Filed 2020·Granted Feb 1, 2022·9 cites·24 claims
- 0299US11201221B2Backside contact structures and fabrication for metal on both sides of devicesINTEL CORP·Filed 2020·Granted Dec 14, 2021·9 cites·24 claims
- 0398US11658221B2Backside contact structures and fabrication for metal on both sides of devicesINTEL CORP·Filed 2021·Granted May 23, 2023·3 cites·20 claims
- 0496US11437283B2Backside contacts for semiconductor devicesINTEL CORP·Filed 2019·Granted Sep 6, 2022·12 cites·25 claims
- 0595US12107085B2Interconnect techniques for electrically connecting source/drain regions of stacked transistorsINTEL CORP·Filed 2023·Granted Oct 1, 2024·2 cites·20 claims
- 0694US11664377B2Forksheet transistor architecturesINTEL CORP·Filed 2021·Granted May 30, 2023·2 cites·20 claims
- 0794US11342227B2Stacked transistor structures with asymmetrical terminal interconnectsINTEL CORP·Filed 2020·Granted May 24, 2022·3 cites·20 claims
- 0894US9608059B2Semiconductor device with isolated body portionCAPPELLANI ANNALISA·Filed 2011·Granted Mar 28, 2017·18 cites·28 claims
- 0992US11264512B2Thin film transistors having U-shaped featuresINTEL CORP·Filed 2018·Granted Mar 1, 2022·6 cites·20 claims
- 1092US10026829B2Semiconductor device with isolated body portionINTEL CORP·Filed 2017·Granted Jul 17, 2018·8 cites·25 claims
- 1190US11404319B2Vertically stacked finFETs and shared gate patterningINTEL CORP·Filed 2017·Granted Aug 2, 2022·5 cites·20 claims
- 1290US11367722B2Stacked nanowire transistor structure with different channel geometries for stressINTEL CORP·Filed 2018·Granted Jun 21, 2022·6 cites·22 claims
- 1390US10892335B2Device isolation by fixed chargeINTEL CORP·Filed 2016·Granted Jan 12, 2021·6 cites·20 claims
- 1489US12080605B2Backside contacts for semiconductor devicesINTEL CORP·Filed 2022·Granted Sep 3, 2024·1 cites·24 claims
- 1588US12288810B2Backside contact structures and fabrication for metal on both sides of devicesINTEL CORP·Filed 2024·Granted Apr 29, 2025·0 cites·20 claims
- 1688US11664373B2Isolation walls for vertically stacked transistor structuresINTEL CORP·Filed 2021·Granted May 30, 2023·1 cites·20 claims
- 1787US10784358B2Backside contact structures and fabrication for metal on both sides of devicesINTEL CORP·Filed 2015·Granted Sep 22, 2020·3 cites·4 claims
- 1886US12288813B2Gate-all-around integrated circuit structures having insulator fin on insulator substrateINTEL CORP·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 1985US11935933B2Backside contact structures and fabrication for metal on both sides of devicesINTEL CORP·Filed 2023·Granted Mar 19, 2024·0 cites·20 claims
- 2085US11362189B2Stacked self-aligned transistors with single workfunction metalINTEL CORP·Filed 2018·Granted Jun 14, 2022·4 cites·25 claims
- 2184US11342432B2Gate-all-around integrated circuit structures having insulator fin on insulator substrateINTEL CORP·Filed 2020·Granted May 24, 2022·1 cites·20 claims
- 2284US2025220952A1Backside contact structures and fabrication for metal on both sides of devicesINTEL CORP·Filed 2025·Application pending·0 cites
- 2383US12148806B2Stacked source-drain-gate connection and process for forming suchINTEL CORP·Filed 2024·Granted Nov 19, 2024·0 cites·20 claims
- 2483US11742346B2Interconnect techniques for electrically connecting source/drain regions of stacked transistorsINTEL CORP·Filed 2018·Granted Aug 29, 2023·3 cites·24 claims
- 2583US11411119B2Double gated thin film transistorsINTEL CORP·Filed 2018·Granted Aug 9, 2022·3 cites·27 claims
- 2683US11257738B2Vertically stacked transistor devices with isolation wall structures containing an electrical conductorINTEL CORP·Filed 2017·Granted Feb 22, 2022·3 cites·25 claims
- 2782US11676966B2Stacked transistors having device strata with different channel widthsINTEL CORP·Filed 2019·Granted Jun 13, 2023·2 cites·19 claims
- 2882US11538808B2Structures and methods for memory cellsINTEL CORP·Filed 2018·Granted Dec 27, 2022·4 cites·25 claims
- 2982US11348916B2Leave-behind protective layer having secondary purposeINTEL CORP·Filed 2018·Granted May 31, 2022·3 cites·13 claims
- 3082US2025227959A1Gate-all-around integrated circuit structures having insulator fin on insulator substrateINTEL CORP·Filed 2025·Application pending·0 cites
- 3181US11764263B2Gate-all-around integrated circuit structures having depopulated channel structures using multiple bottom-up oxidation approachesINTEL CORP·Filed 2019·Granted Sep 19, 2023·2 cites·11 claims
- 3281US11573798B2Stacked transistors with different gate lengths in different device strataINTEL CORP·Filed 2019·Granted Feb 7, 2023·1 cites·23 claims
- 3381US11075198B2Stacked transistor architecture having diverse fin geometryINTEL CORP·Filed 2018·Granted Jul 27, 2021·3 cites·20 claims
- 3479US11916118B2Stacked source-drain-gate connection and process for forming suchINTEL CORP·Filed 2023·Granted Feb 27, 2024·0 cites·20 claims
- 3579US11862702B2Gate-all-around integrated circuit structures having insulator FIN on insulator substrateINTEL CORP·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 3679US11393818B2Stacked transistors with Si PMOS and high mobility thin film transistor NMOSINTEL CORP·Filed 2018·Granted Jul 19, 2022·2 cites·24 claims
- 3779US10546873B2Integrated circuit with stacked transistor devicesINTEL CORP·Filed 2015·Granted Jan 28, 2020·5 cites·19 claims
- 3879US2024332403A1Stacked transistorsINTEL CORP·Filed 2024·Application pending·0 cites
- 3978US12255137B2Sideways vias in isolation areas to contact interior layers in stacked devicesINTEL CORP·Filed 2024·Granted Mar 18, 2025·0 cites·12 claims
- 4078US12224202B2Forming an oxide volume within a finINTEL CORP·Filed 2023·Granted Feb 11, 2025·0 cites·13 claims
- 4178US11387238B2Non-silicon N-Type and P-Type stacked transistors for integrated circuit devicesINTEL CORP·Filed 2018·Granted Jul 12, 2022·2 cites·20 claims
- 4278US10600810B2Backside fin recess control with multi-hsi optionINTEL CORP·Filed 2015·Granted Mar 24, 2020·2 cites·7 claims
- 4377US11640961B2III-V source/drain in top NMOS transistors for low temperature stacked transistor contactsINTEL CORP·Filed 2018·Granted May 2, 2023·2 cites·15 claims
- 4477US2024371700A1Backside contacts for semiconductor devicesINTEL CORP·Filed 2024·Application pending·0 cites
- 4576US12288807B2Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assemblyINTEL CORP·Filed 2023·Granted Apr 29, 2025·0 cites·9 claims
- 4676US11721554B2Stress compensation for wafer to wafer bondingINTEL CORP·Filed 2019·Granted Aug 8, 2023·2 cites·16 claims
- 4775US12057494B2Stacked transistorsINTEL CORP·Filed 2022·Granted Aug 6, 2024·0 cites·25 claims
- 4874US12328864B23D 1T1C stacked dram structure and method to fabricateINTEL CORP·Filed 2023·Granted Jun 10, 2025·0 cites·18 claims
- 4973US11935891B2Non-silicon N-type and P-type stacked transistors for integrated circuit devicesINTEL CORP·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
- 5073US11672133B2Vertically stacked memory elements with air gapINTEL CORP·Filed 2019·Granted Jun 6, 2023·1 cites·19 claims
Showing the top 50 of 140 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →