Inventor · disambiguated record
Abhijeet Paul
Also filed as: PAUL ABHIJEET
35 granted patents·18 pending applications·170 citations·filing 2012–2024
97Inventor score
Top patents by PatentIndex Score
53 records- 0197US11133338B2SLT integrated circuit capacitor structure and methodsPSEMI CORP·Filed 2020·Granted Sep 28, 2021·4 cites·19 claims
- 0297US10115787B1Low leakage FETPSEMI CORP·Filed 2017·Granted Oct 30, 2018·16 cites·25 claims
- 0396US10580903B2Semiconductor-on-insulator transistor with improved breakdown characteristicsPSEMI CORP·Filed 2018·Granted Mar 3, 2020·14 cites·18 claims
- 0496US10573674B2SLT integrated circuit capacitor structure and methodsPSEMI CORP·Filed 2018·Granted Feb 25, 2020·10 cites·20 claims
- 0596US9023705B1Methods of forming stressed multilayer FinFET devices with alternative channel materialsGLOBALFOUNDRIES INC·Filed 2013·Granted May 5, 2015·27 cites·10 claims
- 0696US8889500B1Methods of forming stressed fin channel structures for FinFET semiconductor devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 18, 2014·28 cites·22 claims
- 0794US10777636B1High density IC capacitor structurePSEMI CORP·Filed 2019·Granted Sep 15, 2020·9 cites·22 claims
- 0894US10672806B2High-Q integrated circuit inductor structure and methodsPSEMI CORP·Filed 2018·Granted Jun 2, 2020·9 cites·20 claims
- 0992US10319854B1High voltage switching devicePSEMI CORP·Filed 2017·Granted Jun 11, 2019·6 cites·23 claims
- 1091US11469296B2Low leakage FETPSEMI CORP·Filed 2020·Granted Oct 11, 2022·2 cites·21 claims
- 1191US11437404B2Thermal extraction of single layer transfer integrated circuitsPSEMI CORP·Filed 2020·Granted Sep 6, 2022·2 cites·21 claims
- 1290US11335704B2Low parasitic capacitance RF transistorsPSEMI CORP·Filed 2020·Granted May 17, 2022·2 cites·11 claims
- 1390US8975142B2FinFET channel stress using tungsten contacts in raised epitaxial source and drainGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 10, 2015·14 cites·16 claims
- 1489US11652112B2SLT integrated circuit capacitor structure and methodsPSEMI CORP·Filed 2021·Granted May 16, 2023·1 cites·22 claims
- 1588US11682632B2Integrated device comprising periphery structure configured as an electrical guard ring and a crack stopQUALCOMM INC·Filed 2020·Granted Jun 20, 2023·2 cites·24 claims
- 1688US10388790B2FinFET with multilayer fins for multi-value logic (MVL) applications and method of formingGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 20, 2019·4 cites·7 claims
- 1787US10756166B2Low leakage FETPSEMI CORP·Filed 2018·Granted Aug 25, 2020·3 cites·14 claims
- 1887US10658386B2Thermal extraction of single layer transfer integrated circuitsPSEMI CORP·Filed 2018·Granted May 19, 2020·4 cites·13 claims
- 1987US9362277B2FinFET with multilayer fins for multi-value logic (MVL) applications and method of formingGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 7, 2016·5 cites·12 claims
- 2087US2025072062A1Low Leakage FETMURATA MANUFACTURING CO·Filed 2024·Application pending·0 cites
- 2183US11276749B2High density IC capacitor structurePSEMI CORP·Filed 2020·Granted Mar 15, 2022·1 cites·12 claims
- 2283US2024413243A1High Voltage Switching DeviceMURATA MANUFACTURING CO·Filed 2024·Application pending·0 cites
- 2381US12062669B2SLT integrated circuit capacitor structure and methodsMURATA MANUFACTURING CO·Filed 2023·Granted Aug 13, 2024·0 cites·20 claims
- 2480US12100734B2Low leakage FETMURATA MANUFACTURING CO·Filed 2022·Granted Sep 24, 2024·0 cites·20 claims
- 2579US9219062B2Integrated circuits with improved source/drain contacts and methods for fabricating such integrated circuitsGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 22, 2015·5 cites·20 claims
- 2678US10756213B2FinFET with multilayer fins for multi-value logic (MVL) applicationsGLOBALFOUNDRIES INC·Filed 2019·Granted Aug 25, 2020·1 cites·16 claims
- 2776US12113069B2Thermal extraction of single layer transfer integrated circuitsMURATA MANUFACTURING CO·Filed 2022·Granted Oct 8, 2024·0 cites·4 claims
- 2876US10923592B2High voltage switching devicePSEMI CORP·Filed 2019·Granted Feb 16, 2021·1 cites·21 claims
- 2973US12455255B2CMOS integrated humidity sensor with built-in heaterQUALCOMM INC·Filed 2024·Granted Oct 28, 2025·0 cites·30 claims
- 3072US12027623B2High voltage switching deviceMURATA MANUFACTURING CO·Filed 2021·Granted Jul 2, 2024·0 cites·27 claims
- 3170US12228538B2Moisture sensor having integrated heating elementQUALCOMM INC·Filed 2023·Granted Feb 18, 2025·0 cites·34 claims
- 3265US12155381B2Dynamic body biasing for radio frequency (RF) switchQUALCOMM INC·Filed 2023·Granted Nov 26, 2024·0 cites·20 claims
- 3362US12322461B2Dielectric film based one-time programmable (OTP) memory cellQUALCOMM INC·Filed 2023·Granted Jun 3, 2025·0 cites·30 claims
- 3460US2025210438A1Method and apparatus for ambient temperature sensor design in a complementary metal oxide semiconductor (cmos) processQUALCOMM INC·Filed 2023·Application pending·0 cites
- 3560US2025216250A1Methods and apparatus for ambient light sensor with spectral resolutionQUALCOMM INC·Filed 2023·Application pending·0 cites
- 3660US2025221057A1Ambient light energy harvesting deviceQUALCOMM INC·Filed 2023·Application pending·0 cites
- 3759US2025301789A1Pd-soi transistors without kink effectQUALCOMM INC·Filed 2024·Application pending·0 cites
- 3858US2025098323A1High density metal-oxide-semiconductor (mos) capacitor (moscap) and metal-oxide-metal (mom) capacitor (momcap) stacking layoutQUALCOMM INC·Filed 2023·Application pending·0 cites
- 3957US2025113606A1Body tied to source standard cell implementations in semiconductor-on-insulator (soi) technologyQUALCOMM INC·Filed 2023·Application pending·0 cites
- 4057US2024321370A1Secure anti-fuse one time programmable bit cell designQUALCOMM INC·Filed 2023·Application pending·0 cites
- 4155US12206400B2Dynamic body biasing for radio frequency (RF) switchQUALCOMM INC·Filed 2022·Granted Jan 21, 2025·0 cites·7 claims
- 4255US2024322791A1Monolithic-integrated bulk acoustic wave (baw) resonatorQUALCOMM INC·Filed 2023·Application pending·0 cites
- 4355US2025207987A1Pressure/strain sensor design in a complementary metal oxide semiconductor (cmos) processQUALCOMM INC·Filed 2023·Application pending·0 cites
- 4455US2025072059A1Enhanced body tied to source low noise amplifier deviceQUALCOMM INC·Filed 2023·Application pending·0 cites
- 4554US2024321729A1Integrated redistribution layer inductorsQUALCOMM INC·Filed 2023·Application pending·0 cites
- 4653US2020043946A1Low Parasitic Capacitance RF TransistorsPSEMI CORP·Filed 2019·Application pending·0 cites
- 4752US2024022221A1Amplifier with bias circuit having replicated transconductance devicesQUALCOMM INC·Filed 2023·Application pending·0 cites
- 4851US12310046B2Enhanced MOSFET with superior RF performanceQUALCOMM INC·Filed 2022·Granted May 20, 2025·0 cites·25 claims
- 4949US2022093740A1High-power field-effect transistor (fet)QUALCOMM INC·Filed 2021·Application pending·0 cites
- 5046US11948978B2Field-effect transistors (FETs) employing edge transistor current leakage suppression to reduce FET current leakageQUALCOMM INC·Filed 2020·Granted Apr 2, 2024·0 cites·12 claims
Showing the top 50 of 53 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →