Inventor · disambiguated record
Abhijit Jayant Pethe
Also filed as: PETHE ABHIJIT JAYANT
23 granted patents·4 pending applications·204 citations·filing 2009–2025
95Inventor score
Top patents by PatentIndex Score
27 records- 0197US9859368B2Integration methods to fabricate internal spacers for nanowire devicesINTEL CORP·Filed 2016·Granted Jan 2, 2018·11 cites·15 claims
- 0297US9484447B2Integration methods to fabricate internal spacers for nanowire devicesKIM SEIYON·Filed 2012·Granted Nov 1, 2016·35 cites·9 claims
- 0396US9461143B2Gate contact structure over active gate and method to fabricate samePETHE ABHIJIT JAYANT·Filed 2012·Granted Oct 4, 2016·62 cites·28 claims
- 0496US8735869B2Strained gate-all-around semiconductor devices formed on globally or locally isolated substratesCAPPELLANI ANNALISA·Filed 2012·Granted May 27, 2014·22 cites·18 claims
- 0595US8598003B2Semiconductor device having doped epitaxial region and its methods of fabricationMURTHY ANAND S·Filed 2009·Granted Dec 3, 2013·50 cites·27 claims
- 0691US2025331249A1Integration methods to fabricate internal spacers for nanowire devicesSONY GROUP CORP·Filed 2025·Application pending·0 cites
- 0790US9041106B2Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substratesCAPPELLANI ANNALISA·Filed 2012·Granted May 26, 2015·9 cites·24 claims
- 0889US12363967B2Integration methods to fabricate internal spacers for nanowire devicesSONY GROUP CORP·Filed 2023·Granted Jul 15, 2025·0 cites·8 claims
- 0988US10192783B2Gate contact structure over active gate and method to fabricate sameINTEL CORP·Filed 2016·Granted Jan 29, 2019·4 cites·18 claims
- 1084US9484272B2Methods for fabricating strained gate-all-around semiconductor devices by fin oxidation using an undercut etch-stop layerCAPPELLANI ANNALISA·Filed 2014·Granted Nov 1, 2016·4 cites·6 claims
- 1183US12294027B2Semiconductor device having doped epitaxial region and its methods of fabricationINTEL CORP·Filed 2024·Granted May 6, 2025·0 cites·13 claims
- 1283US10580860B2Integration methods to fabricate internal spacers for nanowire devicesINTEL CORP·Filed 2019·Granted Mar 3, 2020·1 cites·21 claims
- 1382US11869939B2Integration methods to fabricate internal spacers for nanowire devicesSONY GROUP CORP·Filed 2022·Granted Jan 9, 2024·0 cites·10 claims
- 1482US2025233020A1Gate contact structure over active gate and method to fabricate sameINTEL CORP·Filed 2025·Application pending·0 cites
- 1581US10121856B2Integration methods to fabricate internal spacers for nanowire devicesINTEL CORP·Filed 2017·Granted Nov 6, 2018·1 cites·17 claims
- 1679US10847631B2Gate-all-around (GAA) transistors with nanowires on an isolation pedestalINTEL CORP·Filed 2019·Granted Nov 24, 2020·1 cites·11 claims
- 1779US9472399B2Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substratesINTEL CORP·Filed 2015·Granted Oct 18, 2016·2 cites·8 claims
- 1876US11302777B2Integration methods to fabricate internal spacers for nanowire devicesSONY GROUP CORP·Filed 2020·Granted Apr 12, 2022·0 cites·9 claims
- 1976US11004739B2Gate contact structure over active gate and method to fabricate sameINTEL CORP·Filed 2018·Granted May 11, 2021·1 cites·20 claims
- 2075US10229981B2Gate-all-around (GAA) transistor with stacked nanowires on locally isolated substrateINTEL CORP·Filed 2016·Granted Mar 12, 2019·1 cites·3 claims
- 2174US12278144B2Gate contact structure over active gate and method to fabricate sameINTEL CORP·Filed 2021·Granted Apr 15, 2025·0 cites·20 claims
- 2274US10804357B2Integration methods to fabricate internal spacers for nanowire devicesINTEL CORP·Filed 2020·Granted Oct 13, 2020·0 cites·20 claims
- 2369US11908934B2Semiconductor device having doped epitaxial region and its methods of fabricationINTEL CORP·Filed 2021·Granted Feb 20, 2024·0 cites·8 claims
- 2468US10283589B2Integration methods to fabricate internal spacers for nanowire devicesINTEL CORP·Filed 2018·Granted May 7, 2019·0 cites·20 claims
- 2554US10957796B2Semiconductor device having doped epitaxial region and its methods of fabricationINTEL CORP·Filed 2013·Granted Mar 23, 2021·0 cites·5 claims
- 2651US2017025499A1Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substratesCAPPELLANI ANNALISA·Filed 2016·Application pending·0 cites
- 2736US2013320453A1Area scaling on trigate transistorsPETHE ABHIJIT JAYANT·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →