Inventor · disambiguated record
Abu Naser Zainuddin
Also filed as: ZAINUDDIN ABU · ZAINUDDIN ABU NASER · ZAINUDDIN ABU NASER M
21 granted patents·2 pending applications·442 citations·filing 2017–2024
91Inventor score
Files withSANDISK TECHNOLOGIES LLC9SANDISK TECHNOLOGIES INC8GLOBALFOUNDRIES INC4GLOBALFOUNDRIES US INC1WESTERN DIGITAL TECH INC1
Top patents by PatentIndex Score
23 records- 0196US11205493B1Controlling word line voltages to reduce read disturb in a memory deviceSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 21, 2021·7 cites·20 claims
- 0296US10106892B1Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the sameGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 23, 2018·422 cites·15 claims
- 0393US12046314B2NAND memory with different pass voltage ramp rates for binary and multi-state memorySANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jul 23, 2024·4 cites·20 claims
- 0493US11875043B1Loop dependent word line ramp start time for program verify of multi-level NAND memorySANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jan 16, 2024·3 cites·20 claims
- 0591US12387802B2Non-volatile memory with lower current program-verifySANDISK TECHNOLOGIES INC·Filed 2023·Granted Aug 12, 2025·1 cites·20 claims
- 0687US12354664B2Non-volatile memory with loop dependant ramp-up rateSANDISK TECHNOLOGIES LLC·Filed 2023·Granted Jul 8, 2025·1 cites·20 claims
- 0785US12176032B2Word line dependent pass voltage ramp rate to improve performance of NAND memorySANDISK TECHNOLOGIES LLC·Filed 2022·Granted Dec 24, 2024·1 cites·20 claims
- 0884US11139018B1Memory device with temporary kickdown of source voltage before sensingSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 5, 2021·2 cites·17 claims
- 0979US11705206B2Modifying program and erase parameters for single-bit memory cells to improve single-bit/multi-bit hybrid ratioSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jul 18, 2023·1 cites·20 claims
- 1059US12475959B2Non-volatile memory with current detection circuitSANDISK TECHNOLOGIES INC·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 1159US12394491B2Apparatus and method for selectively reducing charge pump speed during erase operationsSANDISK TECHNOLOGIES INC·Filed 2023·Granted Aug 19, 2025·0 cites·18 claims
- 1258US12494260B2Program verify word line ramping delay for lower current consumption modeSANDISK TECHNOLOGIES INC·Filed 2023·Granted Dec 9, 2025·0 cites·20 claims
- 1357US12462877B2Program pulse duration increase for NAND program failureSANDISK TECHNOLOGIES INC·Filed 2023·Granted Nov 4, 2025·0 cites·13 claims
- 1456US12456531B2Separate peak current checkpoints for closed and open block read ICC countermeasures in NAND memorySANDISK TECHNOLOGIES INC·Filed 2023·Granted Oct 28, 2025·0 cites·20 claims
- 1552US12099728B2Non-volatile memory with programmable resistance non-data word lineSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Sep 24, 2024·0 cites·16 claims
- 1651US12346578B2Distributed temperature sensing scheme to suppress peak Icc in non-volatile memoriesWESTERN DIGITAL TECH INC·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 1751US2025372185A1Fake fast plane detection in early program terminationSANDISK TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 1850US12417809B2Open block read ICC reductionSANDISK TECHNOLOGIES INC·Filed 2023·Granted Sep 16, 2025·0 cites·12 claims
- 1946US11475957B2Optimized programming with a single bit per memory cell and multiple bits per memory cellSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Oct 18, 2022·0 cites·20 claims
- 2046US10991689B2Additional spacer for self-aligned contact for only high voltage FinFETsGLOBALFOUNDRIES US INC·Filed 2019·Granted Apr 27, 2021·0 cites·20 claims
- 2144US10755982B1Methods of forming gate structures for transistor devices on an IC productGLOBALFOUNDRIES INC·Filed 2019·Granted Aug 25, 2020·0 cites·19 claims
- 2236US10438853B2Methods, apparatus and system for forming a FinFET device comprising a first portion capable of operating at a first voltage and a second portion capable of operating at a second voltageGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 8, 2019·0 cites·13 claims
- 2332US2019305105A1Gate skirt oxidation for improved finfet performance and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
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