Inventor · disambiguated record
Adrien Lavoie
Also filed as: LAVOIE ADRIEN · LAVOIE ADRIEN R
177 granted patents·77 pending applications·8,009 citations·filing 2005–2025
99Inventor score
Top patents by PatentIndex Score
254 records- 0199US9997357B2Capped ALD films for doping fin-shaped channel regions of 3-D IC transistorsLAM RES CORP·Filed 2014·Granted Jun 12, 2018·430 cites·22 claims
- 0299US9786570B2Methods for depositing films on sensitive substratesNOVELLUS SYSTEMS INC·Filed 2016·Granted Oct 10, 2017·362 cites·6 claims
- 0399US9745658B2Chamber undercoat preparation method for low temperature ALD filmsLAM RES CORP·Filed 2013·Granted Aug 29, 2017·375 cites·16 claims
- 0499US9390909B2Soft landing nanolaminates for advanced patterningNOVELLUS SYSTEMS INC·Filed 2014·Granted Jul 12, 2016·500 cites·18 claims
- 0599US8647993B2Methods for UV-assisted conformal film depositionLAVOIE ADRIEN·Filed 2012·Granted Feb 11, 2014·487 cites·18 claims
- 0698US12278125B2Integrated dry processes for patterning radiation photoresist patterningLAM RES CORP·Filed 2023·Granted Apr 15, 2025·8 cites·19 claims
- 0798US12183604B2Integrated dry processes for patterning radiation photoresist patterningLAM RES CORP·Filed 2023·Granted Dec 31, 2024·9 cites·37 claims
- 0898US11209729B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2019·Granted Dec 28, 2021·21 cites·14 claims
- 0998US10831096B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2018·Granted Nov 10, 2020·34 cites·18 claims
- 1098US10514598B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2017·Granted Dec 24, 2019·33 cites·10 claims
- 1198US10074543B2High dry etch rate materials for semiconductor patterning applicationsLAM RES CORP·Filed 2016·Granted Sep 11, 2018·33 cites·26 claims
- 1298US10043657B2Plasma assisted atomic layer deposition metal oxide for patterning applicationsLAM RES CORP·Filed 2017·Granted Aug 7, 2018·23 cites·19 claims
- 1398US10008428B2Methods for depositing films on sensitive substratesNOVELLUS SYSTEMS INC·Filed 2017·Granted Jun 26, 2018·27 cites·13 claims
- 1498US9966299B2Inhibitor plasma mediated atomic layer deposition for seamless feature fillLAM RES CORP·Filed 2016·Granted May 8, 2018·365 cites·19 claims
- 1598US9892917B2Plasma assisted atomic layer deposition of multi-layer films for patterning applicationsLAM RES CORP·Filed 2016·Granted Feb 13, 2018·55 cites·18 claims
- 1698US9793110B2Gapfill of variable aspect ratio features with a composite PEALD and PECVD methodLAM RES CORP·Filed 2016·Granted Oct 17, 2017·25 cites·16 claims
- 1798US9778561B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2015·Granted Oct 3, 2017·380 cites·9 claims
- 1898US9738977B1Showerhead curtain gas method and system for film profile modulationLAM RES CORP·Filed 2016·Granted Aug 22, 2017·26 cites·24 claims
- 1998US9685320B2Methods for depositing silicon oxideLAM RES CORP·Filed 2014·Granted Jun 20, 2017·495 cites·23 claims
- 2098US9673041B2Plasma assisted atomic layer deposition titanium oxide for patterning applicationsLAM RES CORP·Filed 2016·Granted Jun 6, 2017·26 cites·20 claims
- 2198US9570290B2Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applicationsLAM RES CORP·Filed 2016·Granted Feb 14, 2017·29 cites·19 claims
- 2298US9425078B2Inhibitor plasma mediated atomic layer deposition for seamless feature fillLAM RES CORP·Filed 2015·Granted Aug 23, 2016·454 cites·22 claims
- 2398US9373500B2Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applicationsLAM RES CORP·Filed 2014·Granted Jun 21, 2016·41 cites·22 claims
- 2498US9355839B2Sub-saturated atomic layer deposition and conformal film depositionLAM RES CORP·Filed 2013·Granted May 31, 2016·55 cites·22 claims
- 2598US9287113B2Methods for depositing films on sensitive substratesNOVELLUS SYSTEMS INC·Filed 2013·Granted Mar 15, 2016·74 cites·19 claims
- 2698US9257274B2Gapfill of variable aspect ratio features with a composite PEALD and PECVD methodLAM RES CORP·Filed 2013·Granted Feb 9, 2016·523 cites·23 claims
- 2798US8956983B2Conformal doping via plasma activated atomic layer deposition and conformal film depositionSWAMINATHAN SHANKAR·Filed 2012·Granted Feb 17, 2015·588 cites·41 claims
- 2898US8940646B1Sequential precursor dosing in an ALD multi-station/batch reactorLAM RES CORP·Filed 2013·Granted Jan 27, 2015·540 cites·26 claims
- 2998US8524612B2Plasma-activated deposition of conformal filmsLI MING·Filed 2011·Granted Sep 3, 2013·397 cites·18 claims
- 3098US8101531B1Plasma-activated deposition of conformal filmsLI MING·Filed 2010·Granted Jan 24, 2012·96 cites·18 claims
- 3197US10679848B2Selective atomic layer deposition with post-dose treatmentLAM RES CORP·Filed 2018·Granted Jun 9, 2020·10 cites·13 claims
- 3297US10559468B2Capped ALD films for doping fin-shaped channel regions of 3-D IC transistorsLAM RES CORP·Filed 2018·Granted Feb 11, 2020·13 cites·21 claims
- 3397US10361076B2Gapfill of variable aspect ratio features with a composite PEALD and PECVD methodLAM RES CORP·Filed 2017·Granted Jul 23, 2019·17 cites·4 claims
- 3497US10269559B2Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layerLAM RES CORP·Filed 2017·Granted Apr 23, 2019·28 cites·20 claims
- 3597US10037884B2Selective atomic layer deposition for gapfill using sacrificial underlayerLAM RES CORP·Filed 2016·Granted Jul 31, 2018·30 cites·20 claims
- 3697US9997371B1Atomic layer etch methods and hardware for patterning applicationsLAM RES CORP·Filed 2017·Granted Jun 12, 2018·44 cites·16 claims
- 3797US9611544B2Plasma activated conformal dielectric film depositionLAVOIE ADRIEN·Filed 2011·Granted Apr 4, 2017·44 cites·44 claims
- 3897US9355886B2Conformal film deposition for gapfillNOVELLUS SYSTEMS INC·Filed 2013·Granted May 31, 2016·53 cites·14 claims
- 3997US9214334B2High growth rate process for conformal aluminum nitrideLAM RES CORP·Filed 2014·Granted Dec 15, 2015·38 cites·15 claims
- 4097US8728956B2Plasma activated conformal film depositionLAVOIE ADRIEN·Filed 2011·Granted May 20, 2014·541 cites·39 claims
- 4196US10741458B2Methods for depositing films on sensitive substratesNOVELLUS SYSTEMS INC·Filed 2018·Granted Aug 11, 2020·9 cites·16 claims
- 4296US10665429B2Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformityLAM RES CORP·Filed 2017·Granted May 26, 2020·6 cites·20 claims
- 4396US10655224B2Conical wafer centering and holding device for semiconductor processingLAM RES CORP·Filed 2016·Granted May 19, 2020·8 cites·20 claims
- 4496US10062563B2Selective atomic layer deposition with post-dose treatmentLAM RES CORP·Filed 2016·Granted Aug 28, 2018·16 cites·18 claims
- 4596US9793096B2Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformityLAM RES CORP·Filed 2015·Granted Oct 17, 2017·16 cites·18 claims
- 4696US9644271B1Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabricationLAM RES CORP·Filed 2016·Granted May 9, 2017·21 cites·24 claims
- 4796US9263350B2Multi-station plasma reactor with RF balancingLAM RES CORP·Filed 2014·Granted Feb 16, 2016·19 cites·12 claims
- 4896US9230800B2Plasma activated conformal film depositionNOVELLUS SYSTEMS INC·Filed 2014·Granted Jan 5, 2016·41 cites·22 claims
- 4995US12354871B2Ultrathin atomic layer deposition film accuracy thickness controlLAM RES CORP·Filed 2023·Granted Jul 8, 2025·1 cites·17 claims
- 5095US10566187B2Ultrathin atomic layer deposition film accuracy thickness controlLAM RES CORP·Filed 2015·Granted Feb 18, 2020·9 cites·19 claims
Showing the top 50 of 254 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →