Inventor · disambiguated record
Alison Davis
Also filed as: DAVIS ALISON · DAVIS ALISON V
1 granted patent·16 pending applications·3 citations·filing 2006–2025
24Inventor score
Top patents by PatentIndex Score
17 records- 0183US2025331300A1Integrated circuit structures having cut metal gatesINTEL CORP·Filed 2025·Application pending·0 cites
- 0281US2025133821A1Integrated circuit structures having cut metal gatesINTEL CORP·Filed 2024·Application pending·0 cites
- 0379US2024347539A1Integrated circuit structures having cut metal gatesINTEL CORP·Filed 2024·Application pending·0 cites
- 0469US2022392898A1Integrated circuit structures having cut metal gatesINTEL CORP·Filed 2021·Application pending·0 cites
- 0563US7709866B2Method for forming semiconductor contactsINTEL CORP·Filed 2007·Granted May 4, 2010·3 cites·19 claims
- 0654US2025311328A1Integrated circuit structures having uniform grid metal gate and trench contact placeholder cutINTEL CORP·Filed 2024·Application pending·0 cites
- 0754US2024332290A1Transistor with channel-symmetric gateINTEL CORP·Filed 2023·Application pending·0 cites
- 0853US2025006810A1Transistor with channel-symmetric gateINTEL CORP·Filed 2023·Application pending·0 cites
- 0947US2024112916A1Metal gate cut formed after source and drain contactsINTEL CORP·Filed 2022·Application pending·0 cites
- 1047US2024105453A1High aspect ratio metal gate cutsINTEL CORP·Filed 2022·Application pending·0 cites
- 1146US2024213026A1Chemical mechanical polishing of metal gate cuts formed after source and drain contactsINTEL CORP·Filed 2022·Application pending·0 cites
- 1246US2024203739A1Dielectric layer stack for wide gate cut structuresINTEL CORP·Filed 2022·Application pending·0 cites
- 1345US2024105452A1Gate cuts with self-forming polymer layerINTEL CORP·Filed 2022·Application pending·0 cites
- 1445US2024113105A1Forming metal gate cuts using multiple passes for depth controlINTEL CORP·Filed 2022·Application pending·0 cites
- 1542US2024105800A1Multi-stage mask etch processINTEL CORP·Filed 2022·Application pending·0 cites
- 1634US2010171156A1Method for Forming Semiconductor ContactsRAHHAL-ORABI NADIA·Filed 2010·Application pending·0 cites
- 1732US2007218685A1Method of forming trench contacts for MOS transistorsSIVAKUMAR SWAMINATHAN·Filed 2006·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Alison Davis files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →