Inventor · disambiguated record
Alexandre Ellison
Also filed as: ELLISON ALEXANDRE
7 granted patents·3 pending applications·79 citations·filing 2002–2024
84Inventor score
Top patents by PatentIndex Score
10 records- 0190US7531433B2Homoepitaxial growth of SiC on low off-axis SiC wafersNORSTEL AB·Filed 2005·Granted May 12, 2009·23 cites·14 claims
- 0285US7361222B2Device and method for producing single crystals by vapor depositionNORSTEL AB·Filed 2004·Granted Apr 22, 2008·31 cites·16 claims
- 0369US7018597B2High resistivity silicon carbide single crystalNORSTEL AB·Filed 2002·Granted Mar 28, 2006·19 cites·21 claims
- 0468US8492772B2Homoepitaxial growth of SiC on low off-axis SiC wafersELLISON ALEXANDRE·Filed 2009·Granted Jul 23, 2013·3 cites·12 claims
- 0564US8803160B2Lightly doped silicon carbide wafer and use thereof in high power devicesELLISON ALEXANDRE·Filed 2011·Granted Aug 12, 2014·0 cites·16 claims
- 0660US7482068B2Lightly doped silicon carbide wafer and use thereof in high power devicesNORSTEL AB·Filed 2003·Granted Jan 27, 2009·3 cites·12 claims
- 0760US2024332011A1Polycrystalline silicon carbide substrate and method of manufacturing the sameST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0859US2025105004A1Polycrystalline silicon carbide (sic) substrate with high resistivity and method of manufacturing the sameST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0943US2008149020A1Device and method to producing single crystals by vapour depositionNORSTEL AB·Filed 2008·Application pending·0 cites
- 1036US8097524B2Lightly doped silicon carbide wafer and use thereof in high power devicesELLISON ALEXANDRE·Filed 2009·Granted Jan 17, 2012·0 cites·9 claims
Join the waitlist — get patent alerts
Get an alert when Alexandre Ellison files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →