Inventor · disambiguated record
Ali Keshavarzi
Also filed as: KESHAVARZI ALI
70 granted patents·8 pending applications·2,249 citations·filing 1998–2023
99Inventor score
Files withINTEL CORP56Longitude Flash Memory Solutions Ltd4KESHAVARZI ALI3TAIWAN SEMICONDUCTOR MFG CO LTD3CYPRESS SEMICONDUCTOR CORP2
Top patents by PatentIndex Score
78 records- 0199US6218895B1Multiple well transistor circuits having forward body biasINTEL CORP·Filed 1998·Granted Apr 17, 2001·293 cites·19 claims
- 0298US7230846B2Purge-based floating body memoryINTEL CORP·Filed 2005·Granted Jun 12, 2007·118 cites·21 claims
- 0398US6903984B1Floating-body DRAM using write word line for increased retention timeINTEL CORP·Filed 2003·Granted Jun 7, 2005·138 cites·30 claims
- 0498US6218892B1Differential circuits employing forward body biasINTEL CORP·Filed 1999·Granted Apr 17, 2001·249 cites·30 claims
- 0597US7061806B2Floating-body memory cell writeINTEL CORP·Filed 2004·Granted Jun 13, 2006·151 cites·12 claims
- 0696US7167397B2Apparatus and method for programming a memory arrayINTEL CORP·Filed 2005·Granted Jan 23, 2007·50 cites·15 claims
- 0794US7102951B2OTP antifuse cell and cell arrayINTEL CORP·Filed 2004·Granted Sep 5, 2006·86 cites·27 claims
- 0894US6593799B2Circuit including forward body bias from supply voltage and ground nodesINTEL CORP·Filed 2001·Granted Jul 15, 2003·88 cites·32 claims
- 0993US7859081B2Capacitor, method of increasing a capacitance area of same, and system containing sameINTEL CORP·Filed 2007·Granted Dec 28, 2010·25 cites·8 claims
- 1093US7280425B2Dual gate oxide one time programmable (OTP) antifuse cellINTEL CORP·Filed 2005·Granted Oct 9, 2007·32 cites·19 claims
- 1192US8138042B2Capacitor, method of increasing a capacitance area of same, and system containing sameDOYLE BRIAN S·Filed 2010·Granted Mar 20, 2012·12 cites·12 claims
- 1290US6519176B1Dual threshold SRAM cell for single-ended sensingINTEL CORP·Filed 2000·Granted Feb 11, 2003·57 cites·21 claims
- 1389US10062573B1Embedded SONOS with triple gate oxide and manufacturing method of the sameCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Aug 28, 2018·4 cites·10 claims
- 1489US7391640B22-transistor floating-body dramINTEL CORP·Filed 2004·Granted Jun 24, 2008·45 cites·43 claims
- 1589US7031203B2Floating-body DRAM using write word line for increased retention timeINTEL CORP·Filed 2005·Granted Apr 18, 2006·14 cites·22 claims
- 1688US9624094B1Hydrogen barriers in a copper interconnect processCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Apr 18, 2017·6 cites·20 claims
- 1788US6484265B2Software control of transistor body bias in controlling chip parametersINTEL CORP·Filed 1998·Granted Nov 19, 2002·132 cites·24 claims
- 1888US6272666B1Transistor group mismatch detection and reductionINTEL CORP·Filed 1998·Granted Aug 7, 2001·66 cites·28 claims
- 1988US6100751AForward body biased field effect transistor providing decoupling capacitanceINTEL CORP·Filed 1998·Granted Aug 8, 2000·72 cites·21 claims
- 2086US7098507B2Floating-body dynamic random access memory and method of fabrication in tri-gate technologyINTEL CORP·Filed 2004·Granted Aug 29, 2006·32 cites·30 claims
- 2186US6181608B1Dual Vt SRAM cell with bitline leakage controlINTEL CORP·Filed 1999·Granted Jan 30, 2001·62 cites·24 claims
- 2284US6232827B1Transistors providing desired threshold voltage and reduced short channel effects with forward body biasINTEL CORP·Filed 1998·Granted May 15, 2001·57 cites·31 claims
- 2383US8362573B2Integrated circuits and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 29, 2013·6 cites·20 claims
- 2483US6300819B1Circuit including forward body bias from supply voltage and ground nodesINTEL CORP·Filed 1998·Granted Oct 9, 2001·53 cites·26 claims
- 2582US7236410B2Memory cell driver circuitsINTEL CORP·Filed 2005·Granted Jun 26, 2007·14 cites·17 claims
- 2682US7123500B21P1N 2T gain cellINTEL CORP·Filed 2003·Granted Oct 17, 2006·30 cites·10 claims
- 2782US6794630B2Method and apparatus for adjusting the threshold of a CMOS radiation-measuring circuitINTEL CORP·Filed 2001·Granted Sep 21, 2004·28 cites·7 claims
- 2882US6411156B1Employing transistor body bias in controlling chip parametersINTEL CORP·Filed 1998·Granted Jun 25, 2002·97 cites·29 claims
- 2979US12094880B2Integrated circuits and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 3079US8513741B2Logic circuits using carbon nanotube transistorsKESHAVARZI ALI·Filed 2011·Granted Aug 20, 2013·5 cites·20 claims
- 3178US8004043B2Logic circuits using carbon nanotube transistorsINTEL CORP·Filed 2006·Granted Aug 23, 2011·6 cites·15 claims
- 3278US7787292B2Carbon nanotube fuse elementINTEL CORP·Filed 2007·Granted Aug 31, 2010·8 cites·19 claims
- 3376US7514746B2Floating-body dynamic random access memory and method of fabrication in tri-gate technologyINTEL CORP·Filed 2006·Granted Apr 7, 2009·5 cites·10 claims
- 3475US10332599B2Bias scheme for word programming in non-volatile memory and inhibit disturb reductionLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Jun 25, 2019·3 cites·20 claims
- 3572US7355246B2Memory cell without halo implantINTEL CORP·Filed 2005·Granted Apr 8, 2008·4 cites·4 claims
- 3672US6765414B2Low frequency testing, leakage control, and burn-in control for high-performance digital circuitsINTEL CORP·Filed 2002·Granted Jul 20, 2004·16 cites·18 claims
- 3772US6632686B1Silicon on insulator device design having improved floating body effectINTEL CORP·Filed 2000·Granted Oct 14, 2003·16 cites·26 claims
- 3869US6459293B1Multiple parameter testing with improved sensitivityINTEL CORP·Filed 2000·Granted Oct 1, 2002·13 cites·27 claims
- 3968US8962421B2Methods for fabricating integrated circuits including semiconductive resistor structures in a FinFET architectureGLOBALFOUNDRIES INC·Filed 2012·Granted Feb 24, 2015·3 cites·20 claims
- 4068US7057927B2Floating-body dynamic random access memory with purge lineINTEL CORP·Filed 2005·Granted Jun 6, 2006·5 cites·18 claims
- 4167US7262107B2Capacitor structure for a logic processINTEL CORP·Filed 2005·Granted Aug 28, 2007·3 cites·12 claims
- 4267US7110278B2Crosspoint memory array utilizing one time programmable antifuse cellsINTEL CORP·Filed 2004·Granted Sep 19, 2006·14 cites·21 claims
- 4365US7120072B2Two transistor gain cell, method, and systemINTEL CORP·Filed 2004·Granted Oct 10, 2006·13 cites·25 claims
- 4465US2021074821A1Embedded sonos with triple gate oxide and manufacturing method of the sameLongitude Flash Memory Solutions Ltd·Filed 2020·Application pending·0 cites
- 4564US11581314B2Integrated circuits and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 14, 2023·0 cites·19 claims
- 4664US7075821B2Apparatus and method for a one-phase write to a one-transistor memory cell arrayINTEL CORP·Filed 2004·Granted Jul 11, 2006·12 cites·30 claims
- 4762US7002842B2Floating-body dynamic random access memory with purge lineINTEL CORP·Filed 2003·Granted Feb 21, 2006·10 cites·36 claims
- 4861US10784356B2Embedded sonos with triple gate oxide and manufacturing method of the sameLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Sep 22, 2020·0 cites·16 claims
- 4959US7501316B2Asymmetric memory cellINTEL CORP·Filed 2005·Granted Mar 10, 2009·1 cites·4 claims
- 5058US6683467B1Method and apparatus for providing rotational burn-in stress testingINTEL CORP·Filed 2000·Granted Jan 27, 2004·7 cites·24 claims
Showing the top 50 of 78 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →