Inventor · disambiguated record
Alana Nakata
Also filed as: NAKATA ALANA
22 granted patents·1 pending application·161 citations·filing 2008–2019
95Inventor score
Files withEFFICIENT POWER CONVERSION CORP13LIDOW ALEXANDER6EFFICIENT POWER CONV CORP2CAO JIANJUN1HAUENSTEIN HENNING M1
Top patents by PatentIndex Score
23 records- 0196US8823012B2Enhancement mode GaN HEMT device with gate spacer and method for fabricating the sameLIDOW ALEXANDER·Filed 2012·Granted Sep 2, 2014·31 cites·11 claims
- 0296US8404508B2Enhancement mode GaN HEMT device and method for fabricating the sameLIDOW ALEXANDER·Filed 2010·Granted Mar 26, 2013·27 cites·5 claims
- 0393US9607876B2Semiconductor devices with back surface isolationLIDOW ALEXANDER·Filed 2011·Granted Mar 28, 2017·13 cites·31 claims
- 0492US8350294B2Compensated gate MISFET and method for fabricating the sameEFFICIENT POWER CONVERSION CORP·Filed 2010·Granted Jan 8, 2013·16 cites·12 claims
- 0591US10312131B2Semiconductor devices with back surface isolationEFFICIENT POWER CONVERSION CORP·Filed 2017·Granted Jun 4, 2019·7 cites·4 claims
- 0691US8890168B2Enhancement mode GaN HEMT deviceEFFICIENT POWER CONVERSION CORP·Filed 2013·Granted Nov 18, 2014·14 cites·17 claims
- 0789US9837438B2GaN transistors with polysilicon layers used for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2015·Granted Dec 5, 2017·6 cites·8 claims
- 0889US9214461B2GaN transistors with polysilicon layers for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Dec 15, 2015·9 cites·12 claims
- 0987US8853749B2Ion implanted and self aligned gate structure for GaN transistorsLIDOW ALEXANDER·Filed 2012·Granted Oct 7, 2014·8 cites·17 claims
- 1084US9748347B2Gate with self-aligned ledged for enhancement mode GaN transistorsEFFICIENT POWER CONV CORP·Filed 2014·Granted Aug 29, 2017·5 cites·3 claims
- 1182US10312260B2GaN transistors with polysilicon layers used for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2017·Granted Jun 4, 2019·3 cites·17 claims
- 1282US9171911B2Isolation structure in gallium nitride devices and integrated circuitsEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Oct 27, 2015·6 cites·26 claims
- 1374US8102668B2Semiconductor device package with internal device protectionHAUENSTEIN HENNING M·Filed 2008·Granted Jan 24, 2012·6 cites·17 claims
- 1472US10090274B2Flip chip interconnection with reduced current densityEFFICIENT POWER CONVERSION CORP·Filed 2015·Granted Oct 2, 2018·2 cites·15 claims
- 1571US8969918B2Enhancement mode gallium nitride transistor with improved gate characteristicsLIDOW ALEXANDER·Filed 2010·Granted Mar 3, 2015·3 cites·1 claims
- 1667US8785974B2Bumped, self-isolated GaN transistor chip with electrically isolated back surfaceLIDOW ALEXANDER·Filed 2010·Granted Jul 22, 2014·2 cites·11 claims
- 1765US9583480B2Integrated circuit with matching threshold voltages and method for making sameEFFICIENT POWER CONV CORP·Filed 2015·Granted Feb 28, 2017·1 cites·11 claims
- 1862US10600674B2Semiconductor devices with back surface isolationEFFICIENT POWER CONVERSION CORP·Filed 2019·Granted Mar 24, 2020·0 cites·13 claims
- 1961US9214399B2Integrated circuit with matching threshold voltages and method for making sameEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Dec 15, 2015·1 cites·20 claims
- 2059US9331191B2GaN device with reduced output capacitance and process for making sameEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted May 3, 2016·1 cites·11 claims
- 2155US10312335B2Gate with self-aligned ledge for enhancement mode GaN transistorsEFFICIENT POWER CONVERSION CORP·Filed 2017·Granted Jun 4, 2019·0 cites·7 claims
- 2246US9214528B2Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuitsEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Dec 15, 2015·0 cites·22 claims
- 2334US2011248283A1Via structure of a semiconductor device and method for fabricating the sameCAO JIANJUN·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →