Inventor · disambiguated record
Alok Ranjan
Also filed as: RANJAN ALOK
123 granted patents·47 pending applications·652 citations·filing 2011–2025
99Inventor score
Files withTOKYO ELECTRON LTD137APPLIED MATERIALS INC18RANJAN ALOK7DELL PRODUCTS LP3TATA CONSULTANCY SERVICES LTD2
Top patents by PatentIndex Score
170 records- 0198US10998169B2Systems and methods of control for plasma processingTOKYO ELECTRON LTD·Filed 2018·Granted May 4, 2021·44 cites·20 claims
- 0298US9570313B2Method for etching high-K dielectric using pulsed bias powerTOKYO ELECTRON LTD·Filed 2015·Granted Feb 14, 2017·42 cites·19 claims
- 0397US11094543B1Defect correction on metal resistsTOKYO ELECTRON LTD·Filed 2020·Granted Aug 17, 2021·7 cites·21 claims
- 0497US11079682B1Methods for extreme ultraviolet (EUV) resist patterning developmentTOKYO ELECTRON LTD·Filed 2020·Granted Aug 3, 2021·18 cites·20 claims
- 0597US10290506B2Method for etching high-K dielectric using pulsed bias powerTOKYO ELECTRON LTD·Filed 2017·Granted May 14, 2019·39 cites·23 claims
- 0697US10063062B2Method of detecting plasma discharge in a plasma processing systemTOKYO ELECTRON LTD·Filed 2015·Granted Aug 28, 2018·40 cites·10 claims
- 0797US9768033B2Methods for high precision etching of substratesTOKYO ELECTRON LTD·Filed 2015·Granted Sep 19, 2017·29 cites·19 claims
- 0897US9666447B2Method for selectivity enhancement during dry plasma etchingTOKYO ELECTRON LTD·Filed 2015·Granted May 30, 2017·41 cites·23 claims
- 0997US9607843B2Method for roughness improvement and selectivity enhancement during arc layer etch via adjustment of carbon-fluorine contentTOKYO ELECTRON LTD·Filed 2015·Granted Mar 28, 2017·40 cites·20 claims
- 1097US9576816B2Method for roughness improvement and selectivity enhancement during arc layer etch using hydrogenTOKYO ELECTRON LTD·Filed 2015·Granted Feb 21, 2017·38 cites·19 claims
- 1197US9530667B2Method for roughness improvement and selectivity enhancement during arc layer etch using carbonTOKYO ELECTRON LTD·Filed 2015·Granted Dec 27, 2016·38 cites·20 claims
- 1297US9159575B2Method for etching high-K dielectric using pulsed bias powerTOKYO ELECTRON LTD·Filed 2014·Granted Oct 13, 2015·37 cites·20 claims
- 1396US11342195B1Methods for anisotropic etch of silicon-based materials with selectivity to organic materialsTOKYO ELECTRON LTD·Filed 2021·Granted May 24, 2022·7 cites·20 claims
- 1496US9111746B2Method for reducing damage to low-k gate spacer during etchingRANJAN ALOK·Filed 2012·Granted Aug 18, 2015·29 cites·17 claims
- 1596US8735291B2Method for etching high-k dielectric using pulsed bias powerRANJAN ALOK·Filed 2011·Granted May 27, 2014·39 cites·20 claims
- 1694US12183583B2Remote source pulsing with advanced pulse controlTOKYO ELECTRON LTD·Filed 2021·Granted Dec 31, 2024·2 cites·20 claims
- 1794US9318343B2Method to improve etch selectivity during silicon nitride spacer etchTOKYO ELECTRON LTD·Filed 2014·Granted Apr 19, 2016·30 cites·21 claims
- 1894US8906760B2Aspect ratio dependent deposition to improve gate spacer profile, fin-loss and hardmask-loss for FinFET schemeTOKYO ELECTRON LTD·Filed 2013·Granted Dec 9, 2014·19 cites·20 claims
- 1992US11869756B2Virtual metrology enhanced plasma process optimization methodTOKYO ELECTRON LTD·Filed 2021·Granted Jan 9, 2024·3 cites·20 claims
- 2091US11251021B2Mode-switching plasma systems and methods of operating thereofTOKYO ELECTRON LTD·Filed 2021·Granted Feb 15, 2022·2 cites·20 claims
- 2191US10237916B2Systems and methods for ESC temperature controlTOKYO ELECTRON LTD·Filed 2015·Granted Mar 19, 2019·7 cites·20 claims
- 2291US8551877B2Sidewall and chamfer protection during hard mask removal for interconnect patterningRANJAN ALOK·Filed 2012·Granted Oct 8, 2013·12 cites·20 claims
- 2390US11056347B2Method for dry etching compound materialsTOKYO ELECTRON LTD·Filed 2020·Granted Jul 6, 2021·2 cites·22 claims
- 2488US10701103B2Securing devices using network traffic analysis and software-defined networking (SDN)DELL PRODUCTS LP·Filed 2017·Granted Jun 30, 2020·8 cites·12 claims
- 2588US8592327B2Formation of SiOCl-containing layer on exposed low-k surfaces to reduce low-k damageRANJAN ALOK·Filed 2012·Granted Nov 26, 2013·9 cites·20 claims
- 2687US12057293B2Methods for real-time pulse measurement and pulse timing adjustment to control plasma process performanceTOKYO ELECTRON LTD·Filed 2021·Granted Aug 6, 2024·1 cites·20 claims
- 2787US9378975B2Etching method to form spacers having multiple film layersTOKYO ELECTRON LTD·Filed 2015·Granted Jun 28, 2016·6 cites·20 claims
- 2886US11605539B2Defect correction on metal resistsTOKYO ELECTRON LTD·Filed 2021·Granted Mar 14, 2023·1 cites·20 claims
- 2986US2025343049A1Plasma processing methods using low frequency bias pulsesTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 3085US11264212B1Ion angle detectorTOKYO ELECTRON LTD·Filed 2020·Granted Mar 1, 2022·2 cites·20 claims
- 3185US2025364258A1Pulsed capacitively coupled plasma processesTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 3284US10211065B2Methods for high precision plasma etching of substratesTOKYO ELECTRON LTD·Filed 2015·Granted Feb 19, 2019·3 cites·11 claims
- 3384US9054050B2Method for deep silicon etching using gas pulsingTOKYO ELECTRON LTD·Filed 2013·Granted Jun 9, 2015·7 cites·14 claims
- 3483US11527413B2Cyclic plasma etch processTOKYO ELECTRON LTD·Filed 2021·Granted Dec 13, 2022·1 cites·20 claims
- 3582US10529589B2Method of plasma etching of silicon-containing organic film using sulfur-based chemistryTOKYO ELECTRON LTD·Filed 2018·Granted Jan 7, 2020·4 cites·21 claims
- 3682US10483127B2Methods for high precision plasma etching of substratesTOKYO ELECTRON LTD·Filed 2018·Granted Nov 19, 2019·2 cites·10 claims
- 3782US10446407B2Method of preferential silicon nitride etching using sulfur hexafluorideTOKYO ELECTRON LTD·Filed 2018·Granted Oct 15, 2019·3 cites·14 claims
- 3882US10178538B1Aerial communication framework for providing communication services to users trapped in emergencyTATA CONSULTANCY SERVICES LTD·Filed 2018·Granted Jan 8, 2019·4 cites·13 claims
- 3981US11734783B2System and method for detecting on-street parking violationsTATA CONSULTANCY SERVICES LTD·Filed 2019·Granted Aug 22, 2023·4 cites·3 claims
- 4081US8809194B2Formation of SiOCl-containing layer on spacer sidewalls to prevent CD loss during spacer etchRANJAN ALOK·Filed 2012·Granted Aug 19, 2014·5 cites·19 claims
- 4179US11557487B2Etching metal during processing of a semiconductor structureTOKYO ELECTRON LTD·Filed 2021·Granted Jan 17, 2023·1 cites·20 claims
- 4279US10366902B2Methods for cyclic etching of a patterned layerTOKYO ELECTRON LTD·Filed 2017·Granted Jul 30, 2019·2 cites·12 claims
- 4378US12400865B2Pulsed capacitively coupled plasma processesTOKYO ELECTRON LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 4477US10818507B2Method of etching silicon nitride layers for the manufacture of microelectronic workpiecesTOKYO ELECTRON LTD·Filed 2019·Granted Oct 27, 2020·2 cites·21 claims
- 4577US10192743B2Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structuresTOKYO ELECTRON LTD·Filed 2017·Granted Jan 29, 2019·2 cites·17 claims
- 4676US12500067B2Apparatus for edge control during plasma processingTOKYO ELECTRON LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 4776US9779952B2Method for laterally trimming a hardmaskTOKYO ELECTRON LTD·Filed 2014·Granted Oct 3, 2017·3 cites·20 claims
- 4876US2025079178A1Remote source pulsing with advanced pulse controlTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 4976US2025022689A1Gas cluster assisted plasma processingTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 5075US11688586B2Method and apparatus for plasma processingTOKYO ELECTRON LTD·Filed 2018·Granted Jun 27, 2023·1 cites·22 claims
Showing the top 50 of 170 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →