Inventor · disambiguated record
Amy L. Child
Also filed as: CHILD AMY · CHILD AMY L · CHILD AMY LYNN
5 granted patents·2 pending applications·7 citations·filing 2010–2023
68Inventor score
Top patents by PatentIndex Score
7 records- 0178US9293586B2Epitaxial block layer for a fin field effect transistor deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 22, 2016·4 cites·6 claims
- 0267US8415212B2Method of enhancing photoresist adhesion to rare earth oxidesSCHAEFFER JAMES K·Filed 2010·Granted Apr 9, 2013·3 cites·20 claims
- 0357US2024090213A1Sacrificial layer for forming merged high aspect ratio contacts in 3d nand memory deviceAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 0452US9508850B2Epitaxial block layer for a fin field effect transistor deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 29, 2016·0 cites·14 claims
- 0546US10236343B2Strain retention semiconductor member for channel SiGe layer of pFETGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 19, 2019·0 cites·12 claims
- 0642US10056381B2Punchthrough stop layers for fin-type field-effect transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 21, 2018·0 cites·20 claims
- 0731US2016254145A1Methods for fabricating semiconductor structure with condensed silicon germanium layerGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →