Inventor · disambiguated record
Andres Bryant
Also filed as: BRYANT ANDRES · BRYANT ANDRES A
184 granted patents·24 pending applications·3,189 citations·filing 1989–2024
99Inventor score
Top patents by PatentIndex Score
208 records- 0199US7750682B2CMOS back-gated keeper techniqueIBM·Filed 2008·Granted Jul 6, 2010·120 cites·12 claims
- 0298US9543435B1Asymmetric multi-gate finFETIBM·Filed 2015·Granted Jan 10, 2017·23 cites·3 claims
- 0398US9390981B1Method of forming a complementary metal oxide semiconductor structure with N-type and P-type field effect transistors having symmetric source/drain junctions and optional dual silicidesGLOBALFOUNDRIES US 2 LLC·Filed 2015·Granted Jul 12, 2016·42 cites·11 claims
- 0498US7851865B2Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structureIBM·Filed 2007·Granted Dec 14, 2010·102 cites·20 claims
- 0598US7692254B2Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structureIBM·Filed 2007·Granted Apr 6, 2010·83 cites·20 claims
- 0698US7288445B2Double gated transistor and method of fabricationIBM·Filed 2005·Granted Oct 30, 2007·125 cites·3 claims
- 0798US6870225B2Transistor structure with thick recessed source/drain structures and fabrication process of sameIBM·Filed 2001·Granted Mar 22, 2005·149 cites·11 claims
- 0898US6867460B1FinFET SRAM cell with chevron FinFET logicIBM·Filed 2003·Granted Mar 15, 2005·214 cites·30 claims
- 0997US8227844B2Low lag transfer gate deviceADKISSON JAMES W·Filed 2008·Granted Jul 24, 2012·45 cites·13 claims
- 1097US7341902B2Finfet/trigate stress-memorization methodIBM·Filed 2006·Granted Mar 11, 2008·50 cites·20 claims
- 1196US9312274B1Merged fin structures for finFET devicesIBM·Filed 2014·Granted Apr 12, 2016·27 cites·20 claims
- 1296US8492820B2Integrated circuit and a method using integrated process steps to form deep trench isolation structures and deep trench capacitor structures for the integrated circuitANDERSON BRENT A·Filed 2012·Granted Jul 23, 2013·20 cites·19 claims
- 1396US8455313B1Method for fabricating finFET with merged fins and vertical silicideBASKER VEERARAGHAVAN S·Filed 2012·Granted Jun 4, 2013·28 cites·7 claims
- 1495US8232627B2Integrated circuit device with series-connected field effect transistors and integrated voltage equalization and method of forming the deviceBRYANT ANDRES·Filed 2009·Granted Jul 31, 2012·36 cites·20 claims
- 1595US7645650B2Double gated transistor and method of fabricationIBM·Filed 2007·Granted Jan 12, 2010·29 cites·18 claims
- 1695US6512269B1High-voltage high-speed SOI MOSFETIBM·Filed 2000·Granted Jan 28, 2003·96 cites·12 claims
- 1794US8536018B1Maskless inter-well deep trench isolation structure and methods of manufactureANDERSON BRENT A·Filed 2012·Granted Sep 17, 2013·19 cites·19 claims
- 1894US6646305B2Grounded body SOI SRAM cellIBM·Filed 2001·Granted Nov 11, 2003·72 cites·11 claims
- 1993US9673055B2Method for quadruple frequency FinFETs with single-fin removalGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 6, 2017·9 cites·13 claims
- 2093US7517806B2Integrated circuit having pairs of parallel complementary FinFETsIBM·Filed 2005·Granted Apr 14, 2009·21 cites·22 claims
- 2193US7227205B2Strained-silicon CMOS device and methodIBM·Filed 2004·Granted Jun 5, 2007·72 cites·5 claims
- 2293US7105934B2FinFET with low gate capacitance and low extrinsic resistanceIBM·Filed 2004·Granted Sep 12, 2006·74 cites·29 claims
- 2393US6475838B1Methods for forming decoupling capacitorsIBM·Filed 2000·Granted Nov 5, 2002·79 cites·17 claims
- 2492US9548306B2Method of forming a complementary metal oxide semiconductor structure with N-type and P-type field effect transistors having symmetric source/drain junctions and optional dual silicidesGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 17, 2017·7 cites·20 claims
- 2592US8637931B2finFET with merged fins and vertical silicideBASKER VEERARAGHAVAN S·Filed 2011·Granted Jan 28, 2014·13 cites·18 claims
- 2692US7102166B1Hybrid orientation field effect transistors (FETs)IBM·Filed 2005·Granted Sep 5, 2006·24 cites·20 claims
- 2792US7087966B1Double-Gate FETs (field effect transistors)IBM·Filed 2005·Granted Aug 8, 2006·20 cites·14 claims
- 2892US6991979B2Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETsIBM·Filed 2003·Granted Jan 31, 2006·52 cites·9 claims
- 2991US7671442B2Air-gap insulated interconnectionsIBM·Filed 2007·Granted Mar 2, 2010·19 cites·20 claims
- 3090US8753964B2FinFET structure having fully silicided finBRYANT ANDRES·Filed 2011·Granted Jun 17, 2014·12 cites·12 claims
- 3190US8008146B2Different thickness oxide silicon nanowire field effect transistorsIBM·Filed 2009·Granted Aug 30, 2011·17 cites·6 claims
- 3290US7759179B2Multi-gated, high-mobility, density improved devicesIBM·Filed 2008·Granted Jul 20, 2010·16 cites·20 claims
- 3390US7056773B2Backgated FinFET having different oxide thicknessesIBM·Filed 2004·Granted Jun 6, 2006·37 cites·22 claims
- 3490US6947275B1Fin capacitorIBM·Filed 2004·Granted Sep 20, 2005·49 cites·29 claims
- 3590US6498058B1SOI pass-gate disturb solutionIBM·Filed 2000·Granted Dec 24, 2002·42 cites·7 claims
- 3689US7659579B2FETS with self-aligned bodies and backgate holesIBM·Filed 2006·Granted Feb 9, 2010·14 cites·12 claims
- 3789US7439561B2Pixel sensor cell for collecting electrons and holesIBM·Filed 2005·Granted Oct 21, 2008·8 cites·2 claims
- 3889US6605981B2Apparatus for biasing ultra-low voltage logic circuitsIBM·Filed 2001·Granted Aug 12, 2003·51 cites·14 claims
- 3989US6552396B1Matched transistors and methods for forming the sameIBM·Filed 2000·Granted Apr 22, 2003·52 cites·16 claims
- 4089US5959335ADevice design for enhanced avalanche SOI CMOSIBM·Filed 1998·Granted Sep 28, 1999·67 cites·11 claims
- 4188US8946027B2Replacement-gate FinFET structure and processANDERSON BRENT A·Filed 2012·Granted Feb 3, 2015·10 cites·12 claims
- 4288US8217456B1Low capacitance hi-K dual work function metal gate body-contacted field effect transistorANDERSON BRENT A·Filed 2011·Granted Jul 10, 2012·10 cites·20 claims
- 4388US8193067B2Integrated circuit and a method using integrated process steps to form deep trench isolation structures and deep trench capacitor structures for the integrated circuitANDERSON BRENT A·Filed 2009·Granted Jun 5, 2012·13 cites·19 claims
- 4487US8759916B2Field effect transistor and a method of forming the transistorBRYANT ANDRES·Filed 2012·Granted Jun 24, 2014·9 cites·23 claims
- 4587US7843016B2Asymmetric field effect transistor structure and methodIBM·Filed 2007·Granted Nov 30, 2010·14 cites·19 claims
- 4687US6476445B1Method and structures for dual depth oxygen layers in silicon-on-insulator processesIBM·Filed 1999·Granted Nov 5, 2002·75 cites·25 claims
- 4787US6100564ASOI pass-gate disturb solutionIBM·Filed 1998·Granted Aug 8, 2000·72 cites·5 claims
- 4886US8900954B2Blanket short channel roll-up implant with non-angled long channel compensating implant through patterned openingADKISSON JAMES W·Filed 2011·Granted Dec 2, 2014·6 cites·20 claims
- 4986US8580601B2Pixel sensor cell with a dual work function gate electrodeANDERSON BRENT A·Filed 2012·Granted Nov 12, 2013·3 cites·19 claims
- 5086US8378394B2Method for forming and structure of a recessed source/drain strap for a MUGFETIBM·Filed 2010·Granted Feb 19, 2013·7 cites·10 claims
Showing the top 50 of 208 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →