Inventor · disambiguated record
Anthony I. Chou
Also filed as: CHOU ANTHONY · CHOU ANTHONY I · CHOU ANTHONY I-CHIH
81 granted patents·28 pending applications·521 citations·filing 2001–2024
99Inventor score
Top patents by PatentIndex Score
109 records- 0197US9577061B2Asymmetric high-K dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Feb 21, 2017·11 cites·4 claims
- 0297US9570354B2Asymmetric high-K dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Feb 14, 2017·12 cites·14 claims
- 0397US9412667B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2014·Granted Aug 9, 2016·22 cites·17 claims
- 0496US9859122B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2017·Granted Jan 2, 2018·7 cites·7 claims
- 0596US9768195B2Semiconductor structure with integrated passive structuresIBM·Filed 2016·Granted Sep 19, 2017·8 cites·16 claims
- 0696US9685379B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Jun 20, 2017·9 cites·8 claims
- 0796US9543213B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Jan 10, 2017·10 cites·12 claims
- 0895US9768071B2Asymmetric high-K dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Sep 19, 2017·6 cites·16 claims
- 0995US9559010B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Jan 31, 2017·7 cites·7 claims
- 1095US9530798B1High performance heat shields with reduced capacitanceGLOBALFOUNDRIES INC·Filed 2015·Granted Dec 27, 2016·16 cites·15 claims
- 1194US9922831B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2017·Granted Mar 20, 2018·5 cites·9 claims
- 1294US9721843B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Aug 1, 2017·6 cites·13 claims
- 1394US9627480B2Junction butting structure using nonuniform trench shapeGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 18, 2017·13 cites·11 claims
- 1494US6930060B2Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectricIBM·Filed 2003·Granted Aug 16, 2005·90 cites·20 claims
- 1593US9450072B2Replacement gate structure for enhancing conductivityGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 20, 2016·11 cites·16 claims
- 1692US10367072B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2017·Granted Jul 30, 2019·3 cites·13 claims
- 1791US9400511B1Methods and control systems of resistance adjustment of resistorsIBM·Filed 2016·Granted Jul 26, 2016·6 cites·18 claims
- 1891US9269786B2Silicon nitride layer deposited at low temperature to prevent gate dielectric regrowth high-K metal gate field effect transistorsGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 23, 2016·13 cites·20 claims
- 1990US9837319B2Asymmetric high-K dielectric for reducing gate induced drain leakageIBM·Filed 2016·Granted Dec 5, 2017·3 cites·13 claims
- 2090US9595518B1Fin-type metal-semiconductor resistors and fabrication methods thereofGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 14, 2017·10 cites·15 claims
- 2188US6821833B1Method for separately optimizing thin gate dielectric of PMOS and NMOS transistors within the same semiconductor chip and device manufactured therebyIBM·Filed 2003·Granted Nov 23, 2004·46 cites·18 claims
- 2287US10049942B2Asymmetric semiconductor device and method of forming sameGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 14, 2018·5 cites·11 claims
- 2386US6780720B2Method for fabricating a nitrided silicon-oxide gate dielectricIBM·Filed 2002·Granted Aug 24, 2004·37 cites·22 claims
- 2485US8343781B2Electrical mask inspectionIBM·Filed 2010·Granted Jan 1, 2013·6 cites·12 claims
- 2585US8053325B1Body contact structures and methods of manufacturing the sameIBM·Filed 2010·Granted Nov 8, 2011·8 cites·26 claims
- 2684US10374048B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2017·Granted Aug 6, 2019·1 cites·10 claims
- 2783US8299519B2Read transistor for single poly non-volatile memory using body contacted SOI deviceCHOU ANTHONY I·Filed 2010·Granted Oct 30, 2012·7 cites·24 claims
- 2883US8173524B1Process for epitaxially growing epitaxial material regionsCHAKRAVARTI ASHIMA B·Filed 2011·Granted May 8, 2012·6 cites·24 claims
- 2983US6426305B1Patterned plasma nitridation for selective epi and silicide formationIBM·Filed 2001·Granted Jul 30, 2002·29 cites·36 claims
- 3082US7893494B2Method and structure for SOI body contact FET with reduced parasitic capacitanceIBM·Filed 2008·Granted Feb 22, 2011·9 cites·20 claims
- 3182US7396776B2Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX)IBM·Filed 2006·Granted Jul 8, 2008·7 cites·1 claims
- 3281US9219059B2Semiconductor structure with integrated passive structuresIBM·Filed 2012·Granted Dec 22, 2015·2 cites·13 claims
- 3381US8288826B2Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX)CHOU ANTHONY I·Filed 2011·Granted Oct 16, 2012·4 cites·18 claims
- 3480US8667448B1Integrated circuit having local maximum operating voltageIBM·Filed 2012·Granted Mar 4, 2014·5 cites·13 claims
- 3580US7456115B2Method for forming semiconductor devices having reduced gate edge leakage currentIBM·Filed 2005·Granted Nov 25, 2008·8 cites·19 claims
- 3679US9703301B1Methods and control systems of resistance adjustment of resistorsIBM·Filed 2016·Granted Jul 11, 2017·2 cites·15 claims
- 3779US8232599B2Bulk substrate FET integrated on CMOS SOICHOU ANTHONY I·Filed 2010·Granted Jul 31, 2012·5 cites·15 claims
- 3878US8900961B2Selective deposition of germanium spacers on nitrideCHAKRAVARTI ASHIMA B·Filed 2010·Granted Dec 2, 2014·3 cites·20 claims
- 3977US11101357B2Asymmetric high-k dielectric for reducing gate induced drain leakageTESSERA INC·Filed 2020·Granted Aug 24, 2021·0 cites·20 claims
- 4076US6995065B2Selective post-doping of gate structures by means of selective oxide growthIBM·Filed 2003·Granted Feb 7, 2006·15 cites·28 claims
- 4174US10734492B2Asymmetric high-k dielectric for reducing gate induced drain leakageTESSERA INC·Filed 2019·Granted Aug 4, 2020·0 cites·13 claims
- 4274US8963228B2Non-volatile memory device integrated with CMOS SOI FET on a single chipIBM·Filed 2013·Granted Feb 24, 2015·3 cites·8 claims
- 4373US8546920B2Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX)IBM·Filed 2012·Granted Oct 1, 2013·2 cites·17 claims
- 4473US7491964B2Nitridation of STI fill oxide to prevent the loss of STI fill oxide during manufacturing processIBM·Filed 2005·Granted Feb 17, 2009·5 cites·12 claims
- 4573US7160771B2Forming gate oxides having multiple thicknessesIBM·Filed 2003·Granted Jan 9, 2007·20 cites·7 claims
- 4670US2020027779A1Semiconductor structure with integrated passive structuresIBM·Filed 2019·Application pending·0 cites
- 4769US10381452B2Asymmetric high-k dielectric for reducing gate induced drain leakageIBM·Filed 2017·Granted Aug 13, 2019·0 cites·11 claims
- 4868US7288814B2Selective post-doping of gate structures by means of selective oxide growthIBM·Filed 2005·Granted Oct 30, 2007·2 cites·16 claims
- 4968US2019181037A1Semiconductor structure with integrated passive structuresIBM·Filed 2019·Application pending·0 cites
- 5067US12453170B2Integration of nanosheets with bottom dielectric isolation and ideal diodeIBM·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
Showing the top 50 of 109 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →