Inventor · disambiguated record
Anthony Dip
Also filed as: DIP ANTHONY
40 granted patents·16 pending applications·1,701 citations·filing 1995–2024
98Inventor score
Top patents by PatentIndex Score
56 records- 0199US7994070B1Low-temperature dielectric film formation by chemical vapor depositionTOKYO ELECTRON LTD·Filed 2010·Granted Aug 9, 2011·416 cites·18 claims
- 0299US7816278B2In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor depositionTOKYO ELECTRON LTD·Filed 2008·Granted Oct 19, 2010·523 cites·19 claims
- 0397US8465592B2Film deposition apparatusKATO HITOSHI·Filed 2011·Granted Jun 18, 2013·22 cites·14 claims
- 0496US8043432B2Atomic layer deposition systems and methodsTOKYO ELECTRON LTD·Filed 2007·Granted Oct 25, 2011·43 cites·23 claims
- 0595US8465591B2Film deposition apparatusKATO HITOSHI·Filed 2009·Granted Jun 18, 2013·22 cites·10 claims
- 0695US7205187B2Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursorTOKYO ELECTRON LTD·Filed 2005·Granted Apr 17, 2007·60 cites·35 claims
- 0794US7910494B2Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas theretoTOKYO ELECTRON LTD·Filed 2006·Granted Mar 22, 2011·385 cites·14 claims
- 0892US9831099B2Method and apparatus for multi-film deposition and etching in a batch processing systemTOKYO ELECTRON LTD·Filed 2017·Granted Nov 28, 2017·8 cites·19 claims
- 0990US8673725B2Multilayer sidewall spacer for seam protection of a patterned structureO'MEARA DAVID L·Filed 2010·Granted Mar 18, 2014·15 cites·12 claims
- 1089US11225716B2Internally cooled multi-hole injectors for delivery of process chemicalsTOKYO ELECTRON LTD·Filed 2019·Granted Jan 18, 2022·2 cites·17 claims
- 1189US7776763B2In-situ formation of oxidized aluminum nitride filmsTOKYO ELECTRON LTD·Filed 2007·Granted Aug 17, 2010·9 cites·17 claims
- 1288US6869892B1Method of oxidizing work pieces and oxidation systemTOKYO ELECTRON LTD·Filed 2004·Granted Mar 22, 2005·43 cites·9 claims
- 1383US7165011B1Built-in self test for a thermal processing systemTOKYO ELECTRON LTD·Filed 2005·Granted Jan 16, 2007·11 cites·49 claims
- 1480US7632354B2Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing systemTOKYO ELECTRON LTD·Filed 2006·Granted Dec 15, 2009·9 cites·4 claims
- 1579US8466045B2Method of forming strained epitaxial carbon-doped silicon filmsGUMPHER JOHN·Filed 2010·Granted Jun 18, 2013·6 cites·20 claims
- 1679US6799940B2Removable semiconductor wafer susceptorTOKYO ELECTRON LTD·Filed 2002·Granted Oct 5, 2004·23 cites·58 claims
- 1777US2025092521A1Showerhead for process toolTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1876US7358194B2Sequential deposition process for forming Si-containing filmsTOKYO ELECTRON LTD·Filed 2005·Granted Apr 15, 2008·5 cites·31 claims
- 1975US8263474B2Reduced defect silicon or silicon germanium deposition in micro-featuresDIP ANTHONY·Filed 2007·Granted Sep 11, 2012·7 cites·16 claims
- 2075US7501349B2Sequential oxide removal using fluorine and hydrogenTOKYO ELECTRON LTD·Filed 2006·Granted Mar 10, 2009·5 cites·24 claims
- 2175US7468311B2Deposition of silicon-containing films from hexachlorodisilaneTOKYO ELECTRON LTD·Filed 2003·Granted Dec 23, 2008·17 cites·29 claims
- 2275US7022192B2Semiconductor wafer susceptorTOKYO ELECTRON LTD·Filed 2002·Granted Apr 4, 2006·18 cites·17 claims
- 2372US2024047218A1Systems and methods for improving planarity using selective atomic layer etching (ale)TOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 2470US11781220B2Multiple zone gas injection for control of gas phase radicalsTOKYO ELECTRON LTD·Filed 2021·Granted Oct 10, 2023·0 cites·6 claims
- 2568US12180589B2Showerhead for process toolTOKYO ELECTRON LTD·Filed 2021·Granted Dec 31, 2024·0 cites·24 claims
- 2666US2013251904A1Film deposition method and computer readable storage mediumTOKYO ELECTRON LTD·Filed 2013·Application pending·0 cites
- 2764US2024376602A1Deposition Systems with Rotating Electrostatic Chuck and Methods ThereofTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 2863US7534731B2Method for growing a thin oxynitride film on a substrateTOKYO ELECTRON LTD·Filed 2007·Granted May 19, 2009·1 cites·19 claims
- 2962US11834745B2Spatial atomic layer depositionTOKYO ELECTRON LTD·Filed 2021·Granted Dec 5, 2023·0 cites·22 claims
- 3062US7737051B2Silicon germanium surface layer for high-k dielectric integrationTOKYO ELECTRON LTD·Filed 2004·Granted Jun 15, 2010·8 cites·21 claims
- 3162US5618351AThermal processing apparatus and processSILICON VALLEY GROUP·Filed 1995·Granted Apr 8, 1997·31 cites·20 claims
- 3261US7405140B2Low temperature formation of patterned epitaxial Si containing filmsTOKYO ELECTRON LTD·Filed 2005·Granted Jul 29, 2008·1 cites·26 claims
- 3360US11823910B2Systems and methods for improving planarity using selective atomic layer etching (ALE)TOKYO ELECTRON LTD·Filed 2020·Granted Nov 21, 2023·0 cites·18 claims
- 3458US11469147B2Gas phase production of radicals for dielectricsTOKYO ELECTRON LTD·Filed 2020·Granted Oct 11, 2022·0 cites·22 claims
- 3558US11274370B2Multiple zone gas injection for control of gas phase radicalsTOKYO ELECTRON LTD·Filed 2019·Granted Mar 15, 2022·0 cites·15 claims
- 3658US8664102B2Dual sidewall spacer for seam protection of a patterned structureO'MEARA DAVID L·Filed 2010·Granted Mar 4, 2014·1 cites·13 claims
- 3757US2009324826A1Film Deposition Apparatus, Film Deposition Method, and Computer Readable Storage MediumKATO HITOSHI·Filed 2008·Application pending·0 cites
- 3857US2021395883A1System and Method for Thermally Cracking AmmoniaTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 3954US7235440B2Formation of ultra-thin oxide layers by self-limiting interfacial oxidationIBM·Filed 2003·Granted Jun 26, 2007·5 cites·12 claims
- 4053US2021355580A1Systems and Methods for Depositing a Layer on a Substrate Using Atomic OxygenTOKYO ELECTRON LTD·Filed 2020·Application pending·0 cites
- 4150US7604841B2Method for extending time between chamber cleaning processesTOKYO ELECTRON LTD·Filed 2004·Granted Oct 20, 2009·3 cites·33 claims
- 4249US7659214B2Method for growing an oxynitride film on a substrateTOKYO ELECTRON LTD·Filed 2007·Granted Feb 9, 2010·0 cites·20 claims
- 4347US11417526B2Multiple patterning processesTOKYO ELECTRON LTD·Filed 2020·Granted Aug 16, 2022·0 cites·20 claims
- 4447US2022178024A1Furnace with metal furnace tubeTOKYO ELECTRON LTD·Filed 2020·Application pending·0 cites
- 4546US7635655B2Method for replacing a nitrous oxide based oxidation process with a nitric oxide based oxidation process for substrate processingTOKYO ELECTRON LTD·Filed 2006·Granted Dec 22, 2009·0 cites·21 claims
- 4646US2009035463A1Thermal processing system and method for forming an oxide layer on substratesTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 4745US7202186B2Method of forming uniform ultra-thin oxynitride layersIBM·Filed 2003·Granted Apr 10, 2007·1 cites·30 claims
- 4844US7141765B2Heat treating deviceTOKYO ELECTRON LTD·Filed 2002·Granted Nov 28, 2006·1 cites·11 claims
- 4942US7524769B2Method and system for removing an oxide from a substrateTOKYO ELECTRON LTD·Filed 2005·Granted Apr 28, 2009·0 cites·24 claims
- 5041US2007039924A1Low-temperature oxide removal using fluorineTOKYO ELECTRON LTD·Filed 2005·Application pending·0 cites
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →