Systems and methods for improving planarity using selective atomic layer etching (ale)

Abstract

Atomic layer processing systems are provided for planarizing a patterned substrate utilizing a rotating platen. An atomic layer processing system may include a spatial atomic layer processing chamber with the rotating platen, a sensor that provides sensor data related to a property of the patterned substrate and/or a reaction in the spatial atomic layer processing chamber, and a controller. The controller may be coupled to the sensor to receive the sensor data and utilize such data to adjust at least one operating parameter of the atomic layer processing system so as to achieve a desired amount of planarization of the patterned substrate.

What is claimed is: 
     
         1 . An atomic layer processing system configured to planarize a patterned substrate, comprising:
 a spatial atomic layer processing chamber comprising a rotating platen;   a sensor that provides sensor data related to a property of the patterned substrate and/or a reaction in the spatial atomic layer processing chamber; and   a controller, the controller coupled to the sensor to receive the sensor data, the controller configured to utilize the sensor data to adjust at least one operating parameter of the atomic layer processing system so as to achieve a desired amount of planarization of the patterned substrate.   
     
     
         2 . The atomic layer processing system of  claim 1 , wherein the operating parameter is at least one of a rotational speed, a temperature, a gas flow, a gas ratio, a pressure, a vacuum level, or a number of cycles. 
     
     
         3 . The atomic layer processing system of  claim 1 , wherein the chamber is configured to provide or receive a patterned substrate with a first layer having at least a first portion on an upper surface, a second portion on a lower surface and a sidewall between the upper and lower surface. 
     
     
         4 . The atomic layer processing system of  claim 3 , wherein the chamber is configured to expose the first layer to a first precursor gas to form a modified layer on the first layer such that the modified layer is preferentially formed on the upper surface as compared to the lower surface. 
     
     
         5 . The atomic layer processing system of  claim 4 , wherein the chamber is configured to at least partially remove the modified layer after it is formed of the first layer, wherein the forming the modified layer on the first layer and the at least partially removing the modified layer preferentially etches the upper surface as compared to the lower surface so as to lessen a height of the first portion on the upper surface to a greater extent than a height of the second portion on the lower surface. 
     
     
         6 . The atomic layer processing system of  claim 5 , wherein the sensor data is indicative of a thickness of at least one of the first or second portion of the first layer. 
     
     
         7 . The atomic layer processing system of  claim 6 , wherein system is configured cyclically perform the forming the modified layer and the at least partial removing the modified layer over a number of cycles, and wherein the operating parameter includes the number of cycles. 
     
     
         8 . The atomic layer processing system of  claim 7 , wherein the system is configured such that a rotational speed of the rotating platen causes enhanced deposition of a first precursor of the first precursor gas on the upper surfaces as compared to the lower surfaces. 
     
     
         9 . The atomic layer processing system of  claim 8 , wherein the rotational speed of the rotating platen is adjustable during one or more of the forming or the removing of the modified layer. 
     
     
         10 . The atomic layer processing system of  claim 5 , wherein chamber is configured to generate a plasma to at least partially remove the modified layer. 
     
     
         11 . The atomic layer processing system of  claim 1 , wherein chamber is configured to accommodate more than one substrate. 
     
     
         12 . The atomic layer processing system of  claim 1 , wherein the system is configured to planarize multiple patterned substrates at a time. 
     
     
         13 . The atomic layer processing system of  claim 1 , wherein the system includes a precursor adsorption section and a plasma treatment section. 
     
     
         14 . The atomic layer processing system of  claim 13 , wherein the precursor adsorption section and plasma treatment section are separated from each other by inert gas areas. 
     
     
         15 . The atomic layer processing system of  claim 13 , wherein the system includes a processing section between the precursor adsorption section and the plasma treatment section. 
     
     
         16 . The atomic layer processing system of  claim 15 , wherein the precursor adsorption section, the processing section and the plasma treatment section are separated from each other by inert gas areas. 
     
     
         17 . The atomic layer processing system of  claim 16 , further comprising purge sources extending radially relative to the rotating platen in the inert gas area. 
     
     
         18 . The atomic layer processing system of  claim 17 , further comprising one or more gas outlet pumping ports at the periphery of the rotating platen. 
     
     
         19 . The atomic layer processing system of  claim 18 , wherein the one or more gas outlet pumping ports are provided adjacent at least one of the precursor adsorption section or the plasma treatment section. 
     
     
         20 . The atomic layer processing system of  claim 13 , wherein the precursor adsorption section includes a showerhead and a precursor gas injector.