Inventor · disambiguated record
Andrew Tae Kim
Also filed as: KIM ANDREW · KIM ANDREW T · KIM ANDREW TAE
43 granted patents·4 pending applications·158 citations·filing 2002–2020
97Inventor score
Top patents by PatentIndex Score
47 records- 0198US9435852B1Integrated circuit (IC) test structure with monitor chain and test wiresGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 6, 2016·64 cites·20 claims
- 0292US10615112B2MIM capacitor for improved process defect toleranceIBM·Filed 2018·Granted Apr 7, 2020·8 cites·11 claims
- 0392US10229873B2Three plate MIM capacitor via integrity verificationIBM·Filed 2017·Granted Mar 12, 2019·4 cites·20 claims
- 0488US9305879B2E-fuse with hybrid metallizationIBM·Filed 2013·Granted Apr 5, 2016·9 cites·19 claims
- 0582US11276748B2Switchable metal insulator metal capacitorIBM·Filed 2019·Granted Mar 15, 2022·3 cites·21 claims
- 0680US9478509B2Mechanically anchored backside C4 padGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 25, 2016·5 cites·18 claims
- 0780US7867867B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 11, 2011·7 cites·36 claims
- 0877US11489118B2Reliable resistive random access memoryIBM·Filed 2019·Granted Nov 1, 2022·2 cites·15 claims
- 0975US10741441B2Collar formation for chamfer-less and chamfered viasIBM·Filed 2018·Granted Aug 11, 2020·2 cites·2 claims
- 1073US8384131B2Semiconductor device and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 26, 2013·5 cites·21 claims
- 1170US9431346B2Graphene-metal E-fuseGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 30, 2016·2 cites·13 claims
- 1270US8013420B2Electrical fuse deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 6, 2011·3 cites·16 claims
- 1369US7446033B2Method of forming a metal interconnection of a semiconductor device, and metal interconnection formed by such methodSAMUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 4, 2008·4 cites·40 claims
- 1468US10811353B2Sub-ground rule e-Fuse structureIBM·Filed 2018·Granted Oct 20, 2020·1 cites·19 claims
- 1568US9852999B2Wafer reinforcement to reduce wafer curvatureIBM·Filed 2015·Granted Dec 26, 2017·1 cites·9 claims
- 1668US7892966B2Semiconductor device having thermally formed air gap in wiring layer and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 22, 2011·3 cites·20 claims
- 1767US11647681B2Fabrication of phase change memory cell in integrated circuitIBM·Filed 2020·Granted May 9, 2023·0 cites·5 claims
- 1866US8237202B2Semiconductor devices including dehydrogenated interlayer dielectric layersJEONG YONG-KUK·Filed 2011·Granted Aug 7, 2012·2 cites·17 claims
- 1966US8198701B2Semiconductor device having thermally formed air gap in wiring layer and method of fabricating sameWON SEOK-JUN·Filed 2011·Granted Jun 12, 2012·2 cites·20 claims
- 2066US6776688B2Real-time polishing pad stiffness-control using magnetically controllable fluidTEXAS INSTRUMENTS INC·Filed 2002·Granted Aug 17, 2004·11 cites·16 claims
- 2164US8723290B2Electrical fuse deviceSHIN DONG-SUK·Filed 2012·Granted May 13, 2014·1 cites·8 claims
- 2264US7638423B2Semiconductor device and method of forming wires of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 29, 2009·8 cites·19 claims
- 2362US10262934B2Three plate MIM capacitor via integrity verificationIBM·Filed 2017·Granted Apr 16, 2019·0 cites·20 claims
- 2461US6762501B1Low stress integrated circuit copper interconnect structuresTEXAS INSTRUMENTS INC·Filed 2003·Granted Jul 13, 2004·9 cites·11 claims
- 2559US10840447B2Fabrication of phase change memory cell in integrated circuitIBM·Filed 2019·Granted Nov 17, 2020·0 cites·10 claims
- 2658US10930589B2Advanced interconnects containing an IMT linerIBM·Filed 2019·Granted Feb 23, 2021·0 cites·18 claims
- 2756US10468346B2Advanced interconnects containing an IMT linerIBM·Filed 2018·Granted Nov 5, 2019·0 cites·18 claims
- 2854US10325862B2Wafer rigidity with reinforcement structureGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 18, 2019·0 cites·15 claims
- 2953US10903117B2Fabricating vias with lower resistanceIBM·Filed 2019·Granted Jan 26, 2021·0 cites·8 claims
- 3053US10651083B2Graded interconnect capIBM·Filed 2018·Granted May 12, 2020·0 cites·7 claims
- 3153US10304783B2Wafer reinforcement to reduce wafer curvatureIBM·Filed 2017·Granted May 28, 2019·0 cites·7 claims
- 3253US7811893B2Shallow trench isolation stress adjuster for MOS transistorTEXAS INSTRUMENTS INC·Filed 2009·Granted Oct 12, 2010·0 cites·9 claims
- 3351US10971447B2BEOL electrical fuseIBM·Filed 2019·Granted Apr 6, 2021·0 cites·9 claims
- 3451US9761539B2Wafer rigidity with reinforcement structureIBM·Filed 2015·Granted Sep 12, 2017·0 cites·20 claims
- 3551US8198702B2Electrical fuse deviceSHIN DONG-SUK·Filed 2011·Granted Jun 12, 2012·0 cites·11 claims
- 3650US7888749B2Semiconductor devices having selectively tensile stressed gate electrodes and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 15, 2011·0 cites·20 claims
- 3748US11133462B2Bottom electrode structure and method of forming the sameIBM·Filed 2019·Granted Sep 28, 2021·0 cites·10 claims
- 3846US10770393B2BEOL thin film resistorIBM·Filed 2018·Granted Sep 8, 2020·0 cites·17 claims
- 3946US9318413B2Integrated circuit structure with metal cap and methods of fabricationGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 19, 2016·0 cites·19 claims
- 4045US11121082B2Sub-ground rule e-Fuse structureIBM·Filed 2019·Granted Sep 14, 2021·0 cites·11 claims
- 4145US9817063B2Interconnect reliability structuresGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 14, 2017·0 cites·20 claims
- 4244US2009121358A1Dual depth trench termination method for improving cu-based interconnect integrityTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 4344US2020111741A1Vertical electrical fuseIBM·Filed 2018·Application pending·0 cites
- 4441US7387960B2Dual depth trench termination method for improving Cu-based interconnect integrityTEXAS INSTRUMENTS INC·Filed 2003·Granted Jun 17, 2008·2 cites·4 claims
- 4541US2014264731A1Programmable e-fuse for an integrated circuit productGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 4640US2005233540A1Minimizing transistor variations due to shallow trench isolation stressTEXAS INSTRUMENTS INC·Filed 2004·Application pending·0 cites
- 4732US11881441B2Stacked die semiconductor package spacer dieINTEL CORP·Filed 2017·Granted Jan 23, 2024·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →