Inventor · disambiguated record
Arkadiusz Malinowski
Also filed as: Malinowski Arkadiusz
12 granted patents·2 pending applications·7 citations·filing 2016–2022
81Inventor score
Top patents by PatentIndex Score
14 records- 0189US9812573B1Semiconductor structure including a transistor having stress creating regions and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 7, 2017·7 cites·20 claims
- 0263US11424349B1Extended shallow trench isolation for ultra-low leakage in fin-type lateral bipolar junction transistor devicesGLOBALFOUNDRIES US INC·Filed 2021·Granted Aug 23, 2022·0 cites·16 claims
- 0362US11804542B2Annular bipolar transistorsGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 0459US12408417B2Forksheet semiconductor structure including at least one bipolar junction transistor and methodGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 0557US2020127120A1Methods, apparatus, and system for reducing leakage current in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2019·Application pending·0 cites
- 0656US11916136B2Lateral bipolar junction transistors including a graded silicon-germanium intrinsic baseGLOBALFOUNDRIES US INC·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 0755US10546943B2Methods, apparatus, and system for reducing leakage current in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 28, 2020·0 cites·14 claims
- 0854US11462632B2Lateral bipolar junction transistor device and method of making such a deviceGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 4, 2022·0 cites·16 claims
- 0950US11094822B1Source/drain regions for transistor devices and methods of forming sameGLOBALFOUNDRIES US INC·Filed 2020·Granted Aug 17, 2021·0 cites·20 claims
- 1049US11646361B2Electrical isolation structure using reverse dopant implantation from source/drain region in semiconductor finGLOBALFOUNDRIES US INC·Filed 2021·Granted May 9, 2023·0 cites·15 claims
- 1149US2023066996A1Lateral bipolar junction transistors containing a two-dimensional materialGLOBALFOUNDRIES US INC·Filed 2021·Application pending·0 cites
- 1248US11362177B2Epitaxial semiconductor material regions for transistor devices and methods of forming sameGLOBALFOUNDRIES US INC·Filed 2020·Granted Jun 14, 2022·0 cites·13 claims
- 1347US11239315B2Dual trench isolation structuresGLOBALFOUNDRIES US INC·Filed 2020·Granted Feb 1, 2022·0 cites·20 claims
- 1447US11205699B2Epitaxial semiconductor material regions for transistor devices and methods of forming sameGLOBALFOUNDRIES US INC·Filed 2019·Granted Dec 21, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →