Inventor · disambiguated record
Ashish Bodke
Also filed as: BODKE ASHISH · BODKE ASHISH S · BODKE ASHISH SUBHASH
16 granted patents·20 pending applications·209 citations·filing 1999–2016
92Inventor score
Files withINTERMOLECULAR INC16APPLIED MATERIALS INC5GLOBALFOUNDRIES INC5BECK MARKUS E3Intermolecular2
Top patents by PatentIndex Score
36 records- 0193US9105497B2Methods of forming gate structures for transistor devices for CMOS applicationsGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 11, 2015·19 cites·24 claims
- 0293US8945414B1Oxide removal by remote plasma treatment with fluorine and oxygen radicalsINTERMOLECULAR INC·Filed 2013·Granted Feb 3, 2015·93 cites·20 claims
- 0392US9362283B2Gate structures for transistor devices for CMOS applications and productsGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·9 cites·20 claims
- 0491US9246092B1Tunneling barrier creation in MSM stack as a selector device for non-volatile memory applicationINTERMOLECULAR INC·Filed 2014·Granted Jan 26, 2016·8 cites·14 claims
- 0585US9399812B2Methods of preventing plasma induced damage during substrate processingXIE ZHIGANG·Filed 2011·Granted Jul 26, 2016·11 cites·16 claims
- 0684US6365543B1Process for the production of an oxidation catalyst on-lineDOW CHEMICAL CO·Filed 1999·Granted Apr 2, 2002·56 cites·6 claims
- 0779US9196475B2Methods for fabricating integrated circuits including fluorine incorporationGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 24, 2015·4 cites·18 claims
- 0877US9297775B2Combinatorial screening of metallic diffusion barriersINTERMOLECULAR INC·Filed 2014·Granted Mar 29, 2016·1 cites·20 claims
- 0977US7618893B2Methods of forming a layer for barrier applications in an interconnect structureAPPLIED MATERIALS INC·Filed 2008·Granted Nov 17, 2009·6 cites·12 claims
- 1067US9455393B1Low temperature deposition of low loss dielectric layers in superconducting circuitsINTERMOLECULAR INC·Filed 2015·Granted Sep 27, 2016·1 cites·15 claims
- 1166US9368721B1Diamond like carbon (DLC) as a thermal sink in a selector stack for non-volatile memory applicationINTERMOLECULAR INC·Filed 2014·Granted Jun 14, 2016·1 cites·18 claims
- 1253US8168543B2Methods of forming a layer for barrier applications in an interconnect structureFU XINYU·Filed 2009·Granted May 1, 2012·0 cites·10 claims
- 1353US2012017973A1In-line deposition systemBECK MARKUS E·Filed 2011·Application pending·0 cites
- 1453US2014262749A1Methods of Plasma Surface Treatment in a PVD ChamberINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 1552US9337238B1Photo-induced MSM stackINTERMOLECULAR INC·Filed 2014·Granted May 10, 2016·0 cites·20 claims
- 1648US9236261B2Deposition of titanium-aluminum layersGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 12, 2016·0 cites·24 claims
- 1748US7846824B2Methods for forming a titanium nitride layerAPPLIED MATERIALS INC·Filed 2008·Granted Dec 7, 2010·0 cites·20 claims
- 1848US2011212256A1Deposition rate controlFIRST SOLAR INC·Filed 2011·Application pending·0 cites
- 1948US2012058576A1Deposition SystemBECK MARKUS E·Filed 2011·Application pending·0 cites
- 2044US9059156B2Method of forming an erbium silicide metal gate stack FinFET device via a physical vapor deposition nanolaminate approachINTERMOLECULAR INC·Filed 2013·Granted Jun 16, 2015·0 cites·20 claims
- 2144US2016181380A1Semiconductor Device Metal-Insulator-Semiconductor Contacts with Interface Layers and Methods for Forming the SameINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 2243US2002087042A1Autothermal process for the production of olefinsFiled 2001·Application pending·0 cites
- 2343US2009050468A1Controlled surface oxidation of aluminum interconnectAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 2441US2015093887A1Methods for removing a native oxide layer from germanium susbtrates in the fabrication of integrated circuitsiGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 2541US2016149129A1Using Metal Silicides as Electrodes for MSM Stack in Selector for Non-Volatile Memory ApplicationINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 2641US2016148976A1Simultaneous Carbon and Nitrogen Doping of Si in MSM Stack as a Selector Device for Non-Volatile Memory ApplicationINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 2740US2016141335A1Diamond Like Carbon (DLC) in a Semiconductor Stack as a Selector for Non-Volatile Memory ApplicationINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 2839US2015093914A1Methods for depositing an aluminum oxide layer over germanium susbtrates in the fabrication of integrated circuitsIntermolecular·Filed 2013·Application pending·0 cites
- 2939US2004168705A1Method of cleaning a surface of a material layerAPPLIED MATERIALS INC·Filed 2004·Application pending·0 cites
- 3039US2014363942A1Method for forming a low resistivity tungsten silicide layer for metal gate stack applicationsINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 3138US2004018715A1Method of cleaning a surface of a material layerAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 3238US2015093889A1Methods for removing a native oxide layer from germanium susbtrates in the fabrication of integrated circuitsIntermolecular·Filed 2013·Application pending·0 cites
- 3338US2012021556A1Deposition systemBECK MARKUS E·Filed 2011·Application pending·0 cites
- 3436US2017104031A1Selector ElementsINTERMOLECULAR INC·Filed 2016·Application pending·0 cites
- 3535US2016133819A1Fluorine Containing Low Loss Dielectric Layers for Superconducting CircuitsINTERMOLECULAR INC·Filed 2015·Application pending·0 cites
- 3629US2017062522A1Combining Materials in Different Components of Selector Elements of Integrated CircuitsINTERMOLECULAR INC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →