Inventor · disambiguated record
Ashim Dutta
Also filed as: DUTTA ASHIM
84 granted patents·33 pending applications·125 citations·filing 2014–2024
98Inventor score
Top patents by PatentIndex Score
117 records- 0198US10707413B1Formation of embedded magnetic random-access memory devicesIBM·Filed 2019·Granted Jul 7, 2020·46 cites·20 claims
- 0295US11923311B2Forming self-aligned multi-metal interconnectsIBM·Filed 2022·Granted Mar 5, 2024·2 cites·18 claims
- 0395US11495538B2Fully aligned via for interconnectIBM·Filed 2020·Granted Nov 8, 2022·3 cites·14 claims
- 0495US11223008B2Pillar-based memory hardmask smoothing and stress reductionIBM·Filed 2019·Granted Jan 11, 2022·6 cites·6 claims
- 0594US10957850B2Multi-layer encapsulation to enable endpoint-based process control for embedded memory fabricationIBM·Filed 2018·Granted Mar 23, 2021·6 cites·18 claims
- 0693US10879107B2Method of forming barrier free contact for metal interconnectsIBM·Filed 2018·Granted Dec 29, 2020·14 cites·20 claims
- 0793US10833257B1Formation of embedded magnetic random-access memory devices with multi-level bottom electrode via contactsIBM·Filed 2019·Granted Nov 10, 2020·8 cites·16 claims
- 0892US11502242B2Embedded memory devicesIBM·Filed 2020·Granted Nov 15, 2022·2 cites·20 claims
- 0992US10685879B1Lithographic alignment of a conductive line to a viaIBM·Filed 2019·Granted Jun 16, 2020·8 cites·19 claims
- 1089US12120963B2Contact structure formation for memory devicesIBM·Filed 2021·Granted Oct 15, 2024·1 cites·20 claims
- 1187US12341066B2Advanced metal interconnectIBM·Filed 2021·Granted Jun 24, 2025·1 cites·19 claims
- 1287US12207561B2MRAM device with wrap-around top electrodeIBM·Filed 2022·Granted Jan 21, 2025·1 cites·18 claims
- 1387US10833258B1MRAM device formation with in-situ encapsulationIBM·Filed 2019·Granted Nov 10, 2020·3 cites·13 claims
- 1485US10672611B2Hardmask stress, grain, and structure engineering for advanced memory applicationsIBM·Filed 2018·Granted Jun 2, 2020·3 cites·12 claims
- 1582US11227997B1Planar resistive random-access memory (RRAM) device with a shared top electrodeIBM·Filed 2020·Granted Jan 18, 2022·1 cites·14 claims
- 1682US10796911B2Hardmask stress, grain, and structure engineering for advanced memory applicationsIBM·Filed 2020·Granted Oct 6, 2020·1 cites·12 claims
- 1780US11121173B2Preserving underlying dielectric layer during MRAM device formationIBM·Filed 2019·Granted Sep 14, 2021·2 cites·17 claims
- 1879US11355442B2Forming self-aligned multi-metal interconnectsIBM·Filed 2019·Granted Jun 7, 2022·2 cites·7 claims
- 1979US9679852B2Semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2014·Granted Jun 13, 2017·4 cites·7 claims
- 2078US11227892B2MRAM integration with BEOL interconnect including top viaIBM·Filed 2019·Granted Jan 18, 2022·2 cites·16 claims
- 2177US12363913B2Fabrication of embedded memory devices utilizing a self assembled monolayerIBM·Filed 2023·Granted Jul 15, 2025·0 cites·8 claims
- 2277US11437083B2Two-bit magnetoresistive random-access memory device architectureIBM·Filed 2021·Granted Sep 6, 2022·1 cites·25 claims
- 2375US10672618B2Systems and methods for patterning features in tantalum nitride (TaN) layerTOKYO ELECTRON LTD·Filed 2018·Granted Jun 2, 2020·2 cites·16 claims
- 2474US11778929B2Selective encapsulation for metal electrodes of embedded memory devicesIBM·Filed 2019·Granted Oct 3, 2023·1 cites·19 claims
- 2573US11812668B2Pillar-based memory hardmask smoothing and stress reductionIBM·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 2673US11744083B2Fabrication of embedded memory devices utilizing a self assembled monolayerIBM·Filed 2019·Granted Aug 29, 2023·1 cites·19 claims
- 2771US10615037B2Tone reversal during EUV pattern transfer using surface active layer assisted selective depositionIBM·Filed 2018·Granted Apr 7, 2020·1 cites·16 claims
- 2870US11302573B2Semiconductor structure with fully aligned viasIBM·Filed 2019·Granted Apr 12, 2022·1 cites·20 claims
- 2970US11081388B2Forming barrierless contactIBM·Filed 2019·Granted Aug 3, 2021·1 cites·18 claims
- 3069US12243771B2Selective patterning of vias with hardmasksIBM·Filed 2022·Granted Mar 4, 2025·0 cites·19 claims
- 3169US11830807B2Placing top vias at line ends by selective growth of via mask from line cut dielectricIBM·Filed 2021·Granted Nov 28, 2023·0 cites·6 claims
- 3269US9984977B2Semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2017·Granted May 29, 2018·1 cites·20 claims
- 3368US12438039B2Air gap in beol interconnectIBM·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 3465US11937435B2High density two-tier MRAM structureIBM·Filed 2021·Granted Mar 19, 2024·0 cites·24 claims
- 3565US11682558B2Fabrication of back-end-of-line interconnectsIBM·Filed 2021·Granted Jun 20, 2023·0 cites·20 claims
- 3664US12414480B2MRAM bottom electrode contact with taper profileIBM·Filed 2021·Granted Sep 9, 2025·0 cites·20 claims
- 3764US12183630B2Additive interconnect formationIBM·Filed 2022·Granted Dec 31, 2024·0 cites·20 claims
- 3864US11751492B2Embedded memory pillarIBM·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
- 3964US11699592B2Inverse tone pillar printing method using organic planarizing layer pillarsIBM·Filed 2021·Granted Jul 11, 2023·0 cites·9 claims
- 4062US12058942B2MRAM cell embedded in a metal layerIBM·Filed 2021·Granted Aug 6, 2024·0 cites·22 claims
- 4162US11500293B2Patterning material film stack with hard mask layer configured to support selective deposition on patterned resist layerIBM·Filed 2019·Granted Nov 15, 2022·0 cites·20 claims
- 4262US2025316589A1Vertical anti-fuse structureIBM·Filed 2024·Application pending·0 cites
- 4361US2025218935A1Bimetallic fuse element between metal levelsIBM·Filed 2023·Application pending·0 cites
- 4460US12464731B2Layered bottom electrode dielectric for embedded MRAMIBM·Filed 2021·Granted Nov 4, 2025·0 cites·18 claims
- 4560US12414312B2Back-end-of-line thin film resistorIBM·Filed 2021·Granted Sep 9, 2025·0 cites·16 claims
- 4660US11910722B2Subtractive top via as a bottom electrode contact for an embedded memoryIBM·Filed 2021·Granted Feb 20, 2024·0 cites·19 claims
- 4760US11856878B2High-density resistive random-access memory array with self-aligned bottom electrode contactIBM·Filed 2021·Granted Dec 26, 2023·0 cites·19 claims
- 4860US2025125192A1Air gap structure in interconnect with top viaIBM·Filed 2023·Application pending·0 cites
- 4960US2025125285A1Electrical fuse structureIBM·Filed 2023·Application pending·0 cites
- 5059US11849647B2Nonmetallic liner around a magnetic tunnel junctionIBM·Filed 2021·Granted Dec 19, 2023·0 cites·19 claims
Showing the top 50 of 117 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →