Inventor · disambiguated record
Ashish Pal
Also filed as: PAL ASHISH
11 granted patents·23 pending applications·20 citations·filing 2009–2025
83Inventor score
Files withAPPLIED MATERIALS INC31GOSSNER HARALD1INFINEON TECHNOLOGIES AG1UNIV LELAND STANFORD JUNIOR1
Top patents by PatentIndex Score
34 records- 0186US8405121B2Semiconductor devicesGOSSNER HARALD·Filed 2009·Granted Mar 26, 2013·12 cites·27 claims
- 0282US11211286B2Airgap formation processesAPPLIED MATERIALS INC·Filed 2019·Granted Dec 28, 2021·3 cites·16 claims
- 0382US8878234B2Semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2013·Granted Nov 4, 2014·5 cites·2 claims
- 0477US2025351452A1Gate all around device with fully-depleted silicon-on-insulatorAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 0567US2025227915A1Methods and devices for reduced floating body effect in advanced dramAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0666US12495582B2Self-aligned wide backside power rail contacts to multiple transistor sourcesAPPLIED MATERIALS INC·Filed 2022·Granted Dec 9, 2025·0 cites·20 claims
- 0765US12402351B2Gate all around device with fully-depleted silicon-on-insulatorAPPLIED MATERIALS INC·Filed 2022·Granted Aug 26, 2025·0 cites·12 claims
- 0865US11735467B2Airgap formation processesAPPLIED MATERIALS INC·Filed 2021·Granted Aug 22, 2023·0 cites·3 claims
- 0964US2025338465A1Method and material system for backside power delivery network in static random-access memory devicesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1064US2023299199A1Stress incorporation in semiconductor devicesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1162US11699755B2Stress incorporation in semiconductor devicesAPPLIED MATERIALS INC·Filed 2020·Granted Jul 11, 2023·0 cites·14 claims
- 1261US2025113577A1Semiconductor airgap spacer and fabrication methodsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1361US2025040170A1Isolation module for backside power deliveryAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1459US2024290884A1Stress incorporation in semiconductor devicesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1559US2025311383A1Source-Drain Isolation for Complementary Field Effect TransistorsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1659US2024332388A1Methods of reducing backside contact resistanceAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1759US2024290883A1Void-free stress incorporation in semiconductor devicesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1859US2025338598A1Isolation module for backside power deliveryAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1959US2024290885A1Enhanced mobility in semiconductor devicesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2057US2025212496A1Isolation formation method in high-aspect ratio cmos stacked devicesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2157US2024332297A1Replacement source/drain contact method in complementary field effect transistor (cfet) devicesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2257US2025212458A1Bottom-up dielectric gap-fill for device isolation during source/drain epitaxy in cfetAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2357US2025212459A1Metallic source/drain with stress for advanced logic transistorsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2456US11705490B2Graded doping in power devicesAPPLIED MATERIALS INC·Filed 2021·Granted Jul 18, 2023·0 cites·19 claims
- 2555US2024014214A1INTEGRATING STRAIN SiGe CHANNEL PMOS FOR GAA CMOS TECHNOLOGYAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2654US2025331284A1Sequential self-aligning method in complementary field effect transistor devicesAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2754US2023170400A1Gate all around transistor architecture with fill-in dielectric materialAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 2854US2023260909A1Gate all around backside power rail with diffusion breakAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2953US12074196B2Gradient doping epitaxy in superjunction to improve breakdown voltageAPPLIED MATERIALS INC·Filed 2021·Granted Aug 27, 2024·0 cites·12 claims
- 3051US2024258375A1Silicon carbide transistor with channel counter-doping and pocket-dopingAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3150US2023067331A1Source drain formation in gate all around transistorAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 3249US2025218870A1Self-aligning backside gate connectionAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 3345US11145726B2Doped through-contact structuresAPPLIED MATERIALS INC·Filed 2019·Granted Oct 12, 2021·0 cites·20 claims
- 3441US8969924B2Transistor-based apparatuses, systems and methodsUNIV LELAND STANFORD JUNIOR·Filed 2013·Granted Mar 3, 2015·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →