Inventor · disambiguated record
Atsushi Amo
Also filed as: AMO ATSUSHI
21 granted patents·11 pending applications·128 citations·filing 1998–2025
94Inventor score
Files withRENESAS ELECTRONICS CORP15RENESAS TECH CORP7MITSUBISHI ELECTRIC CORP6HACHISUKA ATSUSHI2RENSAS ELECTRONICS CORP1
Top patents by PatentIndex Score
32 records- 0188US12040399B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2022·Granted Jul 16, 2024·1 cites·12 claims
- 0288US7508022B2Semiconductor device including a TCAM having a storage element formed with a DRAMRENESAS TECH CORP·Filed 2007·Granted Mar 24, 2009·11 cites·6 claims
- 0385US6690053B2Shared contact in a semiconductor device in which DRAMs and SRAMs are combined and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Feb 10, 2004·30 cites·7 claims
- 0483US7498627B2Semiconductor device including a TCAM having a storage element formed with a DRAMRENESAS TECH CORP·Filed 2007·Granted Mar 3, 2009·7 cites·6 claims
- 0582US6025620ASemiconductor device and method of producing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Feb 15, 2000·47 cites·11 claims
- 0680US8072074B2Semiconductor device and method of manufacturing sameHACHISUKA ATSUSHI·Filed 2010·Granted Dec 6, 2011·5 cites·4 claims
- 0776US2025293100A1Manufacturing method for semiconductor device and semiconductor wafersRENESAS ELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 0870US10205006B2Method for manufacturing semiconductor device including patterning conductor film disposed on insulating filmRENESAS ELECTRONICS CORP·Filed 2018·Granted Feb 12, 2019·1 cites·19 claims
- 0969US9755086B2Semiconductor device and a manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2016·Granted Sep 5, 2017·1 cites·16 claims
- 1068US2025194096A1Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1167US9947776B2Method for manufacturing semiconductor device including memory cell of nonvolatile memory, capacitance element, and transistorsRENESAS ELECTRONICS CORP·Filed 2017·Granted Apr 17, 2018·1 cites·15 claims
- 1267US7563668B2Semiconductor device and method of manufacturing sameRENESAS TECH CORP·Filed 2006·Granted Jul 21, 2009·2 cites·10 claims
- 1367US7235836B2Semiconductor device including a TCAM having a storage element formed with a DRAMRENESAS TECH CORP·Filed 2005·Granted Jun 26, 2007·2 cites·6 claims
- 1467US2023093724A1Manufacturing method for semiconductor device and semiconductor wafersRENESAS ELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 1564US7005694B2Semiconductor device including a TCAM having a storage element formed with a DRAMRENESAS TECH CORP·Filed 2004·Granted Feb 28, 2006·7 cites·6 claims
- 1662US7884480B2Semiconductor device and method of manufacturing sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Feb 8, 2011·1 cites·4 claims
- 1760US6798006B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2003·Granted Sep 28, 2004·9 cites·16 claims
- 1858US10211348B2Semiconductor device and a manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2018·Granted Feb 19, 2019·0 cites·4 claims
- 1957US2014252441A1Semiconductor device and method of manufacturing sameRENESAS ELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2053US2009127607A1Semiconductor device including a tcam having a storage element formed with a dramRENESAS TECH CORP·Filed 2009·Application pending·0 cites
- 2152US7145240B2Semiconductor device having a capacitor and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Dec 5, 2006·3 cites·4 claims
- 2251US10243085B2Semiconductor device and method of manufacturing sameRENESAS ELECTRONICS CORP·Filed 2017·Granted Mar 26, 2019·0 cites·8 claims
- 2348US9748407B2Semiconductor device and method of manufacturing sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Aug 29, 2017·0 cites·19 claims
- 2448US2012056302A1Semiconductor device and method of manufacturing sameHACHISUKA ATSUSHI·Filed 2011·Application pending·0 cites
- 2547US11563111B2Method of manufacturing semiconductor device having split-gate memory and MISFETRENESAS ELECTRONICS CORP·Filed 2020·Granted Jan 24, 2023·0 cites·10 claims
- 2647US9954120B2Semiconductor device and a manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2017·Granted Apr 24, 2018·0 cites·16 claims
- 2743US10847628B2Semiconductor device and manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2019·Granted Nov 24, 2020·0 cites·13 claims
- 2837US2004009431A1Method of exposing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 2936US2004067616A1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2003·Application pending·0 cites
- 3036US2003215997A1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 3133US2003098495A1Semiconductor deviceFiled 2002·Application pending·0 cites
- 3233US2016064507A1Semiconductor device and method of manufacturing sameRENSAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →