Inventor · disambiguated record
Atsushi Hachisuka
Also filed as: HACHISUKA ATSUSHI
42 granted patents·7 pending applications·676 citations·filing 1989–2014
98Inventor score
Top patents by PatentIndex Score
49 records- 0195US6323560B1Registration accuracy measurement mark, method of repairing defect of the mark, photomask having the mark, method of manufacturing the photo mask and method of exposure thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 27, 2001·63 cites·3 claims
- 0280US8072074B2Semiconductor device and method of manufacturing sameHACHISUKA ATSUSHI·Filed 2010·Granted Dec 6, 2011·5 cites·4 claims
- 0379US6218235B1Method of manufacturing a DRAM and logic deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Apr 17, 2001·31 cites·19 claims
- 0479US5672533AField effect transistor having impurity regions of different depths and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Sep 30, 1997·37 cites·1 claims
- 0579US5218219ASemiconductor memory device having a peripheral wall at the boundary region of a memory cell array region and a peripheral circuit regionMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jun 8, 1993·35 cites·8 claims
- 0676US5381365ADynamic random access memory having stacked type capacitor and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 10, 1995·33 cites·5 claims
- 0774US5597755AMethod of manufacturing a stacked capacitor in a dramMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jan 28, 1997·25 cites·9 claims
- 0873US6388295B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 14, 2002·21 cites·20 claims
- 0972US5448512ASemiconductor memory device with contact region intermediate memory cell and peripheral circuitMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Sep 5, 1995·26 cites·13 claims
- 1072US5364811AMethod of manufacturing a semiconductor memory device with multiple device forming regionsMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Nov 15, 1994·26 cites·3 claims
- 1169US5798289AMethod of manufacturing stacked capacitors in a DRAM with reduced isolation region between adjacent capacitorsMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 25, 1998·20 cites·1 claims
- 1267US7563668B2Semiconductor device and method of manufacturing sameRENESAS TECH CORP·Filed 2006·Granted Jul 21, 2009·2 cites·10 claims
- 1367US5489791AField effect transistor having impurity regions of different depths and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 6, 1996·22 cites·3 claims
- 1466US5580813AMethod of forming a semiconductor memory device having a contact region between memory cell and an interlayer insolating layerMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Dec 3, 1996·20 cites·5 claims
- 1565US5434439ADynamic random access memory having stacked type capacitor and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jul 18, 1995·18 cites·11 claims
- 1662US7884480B2Semiconductor device and method of manufacturing sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Feb 8, 2011·1 cites·4 claims
- 1761US6784066B2Method for manufacturing semiconductor device and semiconductor device manufactured therebyRENESAS TECH CORP·Filed 2001·Granted Aug 31, 2004·10 cites·16 claims
- 1861US6486516B1Semiconductor device and a method of producing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 26, 2002·17 cites·1 claims
- 1961US5276344AField effect transistor having impurity regions of different depths and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 4, 1994·17 cites·27 claims
- 2060US6798006B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2003·Granted Sep 28, 2004·9 cites·16 claims
- 2160US5578861ASemiconductor device having redundant circuitMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 26, 1996·27 cites·9 claims
- 2260US5240872AMethod of manufacturing semiconductor device having interconnection layer contacting source/drain regionsMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Aug 31, 1993·29 cites·4 claims
- 2359US5892291ARegistration accuracy measurement markMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 6, 1999·15 cites·12 claims
- 2457US6163062ASemiconductor device having a metallic fuse member and cutting method thereof with laser lightMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Dec 19, 2000·23 cites·8 claims
- 2557US2014252441A1Semiconductor device and method of manufacturing sameRENESAS ELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2654US5173752ASemiconductor device having interconnection layer contacting source/drain regionsMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Dec 22, 1992·22 cites·8 claims
- 2752US7145240B2Semiconductor device having a capacitor and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Dec 5, 2006·3 cites·4 claims
- 2851US6160284ASemiconductor device with sidewall insulating layers in the capacitor contact holeMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 12, 2000·15 cites·10 claims
- 2951US5408114ASemiconductor memory device having cylindrical capacitor and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Apr 18, 1995·12 cites·1 claims
- 3049US6331462B1Manufacturing method of a semiconductor device for desired circuit patternsMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 18, 2001·10 cites·13 claims
- 3148US6309931B1Method of making a semiconductor device with sidewall insulating layers in the capacitor contact holeMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 30, 2001·2 cites·6 claims
- 3248US2012056302A1Semiconductor device and method of manufacturing sameHACHISUKA ATSUSHI·Filed 2011·Application pending·0 cites
- 3346US5627093AMethod of manufacturing a wiring layer for use in a semiconductor device having a plurality of conductive layersMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 6, 1997·11 cites·9 claims
- 3446US5153689ASemiconductor memory device having bit lines formed of an interconnecting layer of lower reflectance material than the material of the word linesMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Oct 6, 1992·14 cites·7 claims
- 3545US5892702ASemiconductor memory device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 6, 1999·8 cites·5 claims
- 3643US6313032B1Method for manufacturing a salicide transistor, semiconductor storage, and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 6, 2001·1 cites·12 claims
- 3743US2004232512A1Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2004·Application pending·0 cites
- 3841US5506164AMethod of manufacturing a semiconductor device having a cylindrical capacitorMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 9, 1996·5 cites·6 claims
- 3940US5233212ASemiconductor device having gate electrode spacing dependent upon gate side wall insulating dimensionMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Aug 3, 1993·9 cites·1 claims
- 4039US6068952ARegistration accuracy measurement mark, method of repairing defect of the mark, photomask having the mark, method of manufacturing the photomask and method of exposure thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 30, 2000·4 cites·4 claims
- 4138US5338699AMethod of making a semiconductor integrated device having gate sidewall structureMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Aug 16, 1994·8 cites·5 claims
- 4237US2004009431A1Method of exposing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 4336US2004067616A1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2003·Application pending·0 cites
- 4436US2003215997A1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 4536US2005009269A1Semiconductor device and method of manufacturing semiconductor deviceFiled 2004·Application pending·0 cites
- 4635US5502324AComposite wiring layerMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Mar 26, 1996·5 cites·9 claims
- 4735US5300444AMethod of manufacturing a semiconductor device having a stacked structure formed of polycrystalline silicon film and silicon oxide filmMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Apr 5, 1994·9 cites·20 claims
- 4835US5281838ASemiconductor device having contact between wiring layer and impurity regionMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jan 25, 1994·6 cites·8 claims
- 4930US6765251B2Semiconductor device having interconnection structureRENESAS TECH CORP·Filed 1999·Granted Jul 20, 2004·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →