Inventor · disambiguated record
Baosuo Zhou
Also filed as: ZHOU BAOSUO
37 granted patents·1 pending application·1,036 citations·filing 2005–2024
98Inventor score
Files withMICRON TECHNOLOGY INC21ZHOU BAOSUO5LAM RES CORP4LODESTAR LICENSING GROUP LLC2SIPANI VISHAL2
Top patents by PatentIndex Score
38 records- 0199US7732343B2Simplified pitch doubling process flowMICRON TECHNOLOGY INC·Filed 2007·Granted Jun 8, 2010·572 cites·13 claims
- 0298US9870899B2Cobalt etch backLAM RES CORP·Filed 2015·Granted Jan 16, 2018·32 cites·19 claims
- 0397US9679781B2Methods for integrated circuit fabrication with protective coating for planarizationMICRON TECHNOLOGY INC·Filed 2015·Granted Jun 13, 2017·27 cites·10 claims
- 0497US7807575B2Methods to reduce the critical dimension of semiconductor devicesMICRON TECHNOLOGY INC·Filed 2006·Granted Oct 5, 2010·56 cites·12 claims
- 0597US7393789B2Protective coating for planarizationMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 1, 2008·110 cites·39 claims
- 0696US8338304B2Methods to reduce the critical dimension of semiconductor devices and related semiconductor devicesZHOU BAOSUO·Filed 2010·Granted Dec 25, 2012·27 cites·9 claims
- 0796US7902074B2Simplified pitch doubling process flowMICRON TECHNOLOGY INC·Filed 2006·Granted Mar 8, 2011·26 cites·19 claims
- 0895US9761457B2Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including sameMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 12, 2017·7 cites·8 claims
- 0995US8852851B2Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including sameZHOU BAOSUO·Filed 2006·Granted Oct 7, 2014·23 cites·10 claims
- 1094US10784086B2Cobalt etch backLAM RES CORP·Filed 2017·Granted Sep 22, 2020·9 cites·14 claims
- 1194US10096483B2Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including sameMICRON TECHNOLOGY INC·Filed 2017·Granted Oct 9, 2018·6 cites·8 claims
- 1294US8836083B2Methods to reduce the critical dimension of semiconductor devices and related semiconductor devicesZHOU BAOSUO·Filed 2012·Granted Sep 16, 2014·15 cites·21 claims
- 1393US8980752B2Method of forming a plurality of spaced featuresMICRON TECHNOLOGY INC·Filed 2013·Granted Mar 17, 2015·14 cites·20 claims
- 1492US10607844B2Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including sameMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 31, 2020·4 cites·4 claims
- 1592US9003651B2Methods for integrated circuit fabrication with protective coating for planarizationMICRON TECHNOLOGY INC·Filed 2013·Granted Apr 14, 2015·9 cites·20 claims
- 1692US7659208B2Method for forming high density patternsMICRON TECHNOLOGY INC·Filed 2007·Granted Feb 9, 2010·14 cites·35 claims
- 1791US9184159B2Simplified pitch doubling process flowMICRON TECHNOLOGY INC·Filed 2012·Granted Nov 10, 2015·7 cites·20 claims
- 1891US8324107B2Method for forming high density patternsZHOU BAOSUO·Filed 2010·Granted Dec 4, 2012·9 cites·19 claims
- 1990US12463044B2Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including sameLODESTAR LICENSING GROUP LLC·Filed 2024·Granted Nov 4, 2025·0 cites·12 claims
- 2090US8492278B2Method of forming a plurality of spaced featuresGOOD FARRELL·Filed 2010·Granted Jul 23, 2013·17 cites·28 claims
- 2190US7662718B2Trim process for critical dimension control for integrated circuitsMICRON TECHNOLOGY INC·Filed 2006·Granted Feb 16, 2010·14 cites·23 claims
- 2287US8479384B2Methods for integrated circuit fabrication with protective coating for planarizationABATCHEV MIRZAFER·Filed 2011·Granted Jul 9, 2013·6 cites·20 claims
- 2387US8030217B2Simplified pitch doubling process flowMICRON TECHNOLOGY INC·Filed 2010·Granted Oct 4, 2011·5 cites·25 claims
- 2487US7910483B2Trim process for critical dimension control for integrated circuitsMICRON TECHNOLOGY INC·Filed 2010·Granted Mar 22, 2011·7 cites·18 claims
- 2583US9305782B2Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including sameMICRON TECHNOLOGY INC·Filed 2014·Granted Apr 5, 2016·3 cites·10 claims
- 2682US11935756B2Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including sameLODESTAR LICENSING GROUP LLC·Filed 2022·Granted Mar 19, 2024·0 cites·8 claims
- 2776US9330934B2Methods of forming patterns on substratesZHOU BAOSUO·Filed 2009·Granted May 3, 2016·5 cites·47 claims
- 2876US8871648B2Method for forming high density patternsMICRON TECHNOLOGY INC·Filed 2012·Granted Oct 28, 2014·2 cites·20 claims
- 2974US11335563B2Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including sameMICRON TECHNOLOGY INC·Filed 2020·Granted May 17, 2022·0 cites·7 claims
- 3073US8389407B2Methods of patterning materialsSIPANI VISHAL·Filed 2012·Granted Mar 5, 2013·2 cites·5 claims
- 3172US9570320B2Method to etch copper barrier filmLAM RES CORP·Filed 2014·Granted Feb 14, 2017·3 cites·22 claims
- 3272US8216939B2Methods of forming openingsSIPANI VISHAL·Filed 2010·Granted Jul 10, 2012·2 cites·18 claims
- 3372US8011090B2Method for forming and planarizing adjacent regions of an integrated circuitMICRON TECHNOLOGY INC·Filed 2008·Granted Sep 6, 2011·2 cites·16 claims
- 3464US8338959B2Simplified pitch doubling process flowNIROOMAND ARDAVAN·Filed 2011·Granted Dec 25, 2012·1 cites·19 claims
- 3555US8530352B2Methods of patterning a materialMICRON TECHNOLOGY INC·Filed 2013·Granted Sep 10, 2013·0 cites·7 claims
- 3644US9589853B2Method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamberLAM RES CORP·Filed 2014·Granted Mar 7, 2017·0 cites·20 claims
- 3743US12120878B2Block-to-block isolation and deep contact using pillars in a memory arrayIntel NDTM US LLC·Filed 2020·Granted Oct 15, 2024·0 cites·20 claims
- 3842US2007123050A1Etch process used during the manufacture of a semiconductor device and systems including the semiconductor deviceMICRON TECHNOLOGY INC·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →