Inventor · disambiguated record
Biagio Gallo
Also filed as: GALLO BIAGIO
33 granted patents·5 pending applications·5,472 citations·filing 2002–2011
98Inventor score
Top patents by PatentIndex Score
38 records- 0199US7429532B2Semiconductor substrate process using an optically writable carbon-containing maskAPPLIED MATERIALS INC·Filed 2005·Granted Sep 30, 2008·539 cites·18 claims
- 0299US7422775B2Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Sep 9, 2008·535 cites·17 claims
- 0399US7393765B2Low temperature CVD process with selected stress of the CVD layer on CMOS devicesAPPLIED MATERIALS INC·Filed 2007·Granted Jul 1, 2008·562 cites·16 claims
- 0499US7335611B2Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layerAPPLIED MATERIALS INC·Filed 2005·Granted Feb 26, 2008·535 cites·20 claims
- 0599US7323401B2Semiconductor substrate process using a low temperature deposited carbon-containing hard maskAPPLIED MATERIALS INC·Filed 2005·Granted Jan 29, 2008·580 cites·17 claims
- 0699US7312148B2Copper barrier reflow process employing high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Dec 25, 2007·537 cites·21 claims
- 0799US7312162B2Low temperature plasma deposition process for carbon layer depositionAPPLIED MATERIALS INC·Filed 2005·Granted Dec 25, 2007·544 cites·19 claims
- 0899US7109098B1Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Sep 19, 2006·551 cites·15 claims
- 0998US7094670B2Plasma immersion ion implantation processAPPLIED MATERIALS INC·Filed 2005·Granted Aug 22, 2006·79 cites·23 claims
- 1097US7465478B2Plasma immersion ion implantation processAPPLIED MATERIALS INC·Filed 2005·Granted Dec 16, 2008·39 cites·18 claims
- 1197US7291545B2Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2005·Granted Nov 6, 2007·73 cites·20 claims
- 1297US7292428B2Electrostatic chuck with smart lift-pin mechanism for a plasma reactorAPPLIED MATERIALS INC·Filed 2005·Granted Nov 6, 2007·57 cites·20 claims
- 1397US6893907B2Fabrication of silicon-on-insulator structure using plasma immersion ion implantationAPPLIED MATERIALS INC·Filed 2004·Granted May 17, 2005·127 cites·59 claims
- 1496US7288491B2Plasma immersion ion implantation processAPPLIED MATERIALS INC·Filed 2005·Granted Oct 30, 2007·41 cites·22 claims
- 1596US7183177B2Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancementAPPLIED MATERIALS INC·Filed 2004·Granted Feb 27, 2007·119 cites·27 claims
- 1695US7666464B2RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactorAPPLIED MATERIALS INC·Filed 2004·Granted Feb 23, 2010·63 cites·39 claims
- 1795US7137354B2Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted Nov 21, 2006·63 cites·79 claims
- 1895US7037813B2Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted May 2, 2006·76 cites·86 claims
- 1994US6965116B1Method of determining dose uniformity of a scanning ion implanterAPPLIED MATERIALS INC·Filed 2004·Granted Nov 15, 2005·91 cites·26 claims
- 2092US7223676B2Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layerAPPLIED MATERIALS INC·Filed 2004·Granted May 29, 2007·49 cites·64 claims
- 2190US7700465B2Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted Apr 20, 2010·25 cites·89 claims
- 2290US7303982B2Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted Dec 4, 2007·33 cites·84 claims
- 2389US7294563B2Semiconductor on insulator vertical transistor fabrication and doping processAPPLIED MATERIALS INC·Filed 2004·Granted Nov 13, 2007·43 cites·24 claims
- 2487US7642180B2Semiconductor on insulator vertical transistor fabrication and doping processAPPLIED MATERIALS INC·Filed 2007·Granted Jan 5, 2010·12 cites·26 claims
- 2587US7166524B2Method for ion implanting insulator material to reduce dielectric constantAPPLIED MATERIALS INC·Filed 2004·Granted Jan 23, 2007·46 cites·38 claims
- 2686US7320734B2Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted Jan 22, 2008·24 cites·22 claims
- 2781US7968439B2Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfacesAPPLIED MATERIALS INC·Filed 2008·Granted Jun 28, 2011·6 cites·13 claims
- 2879US8900405B2Plasma immersion ion implantation reactor with extended cathode process ringPORSHNEV PETER I·Filed 2007·Granted Dec 2, 2014·6 cites·18 claims
- 2976US7428915B2O-ringless tandem throttle valve for a plasma reactor chamberAPPLIED MATERIALS INC·Filed 2005·Granted Sep 30, 2008·8 cites·6 claims
- 3068US6639231B1Method of obtaining a performance parameter for an ion implanter and an ion implanter employing the methodAPPLIED MATERIALS INC·Filed 2002·Granted Oct 28, 2003·8 cites·14 claims
- 3164US7989329B2Removal of surface dopants from a substrateAPPLIED MATERIALS INC·Filed 2007·Granted Aug 2, 2011·1 cites·12 claims
- 3258US2007119546A1Plasma immersion ion implantation apparatus including a capacitively coupled plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 3355US7732309B2Plasma immersed ion implantation processAPPLIED MATERIALS INC·Filed 2006·Granted Jun 8, 2010·0 cites·15 claims
- 3446US8168519B2Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfacesLI SHIJIAN·Filed 2011·Granted May 1, 2012·0 cites·13 claims
- 3546US2011256691A1Removal of surface dopants from a substrateRAMASWAMY KARTIK·Filed 2011·Application pending·0 cites
- 3643US2007042580A1Ion implanted insulator material with reduced dielectric constantAL-BAYATI AMIR·Filed 2006·Application pending·0 cites
- 3741US2005230047A1Plasma immersion ion implantation apparatusAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 3840US2006260545A1Low temperature absorption layer deposition and high speed optical annealing systemRAMASWAMY KARTIK·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →