Inventor · disambiguated record
Biswajeet Guha
Also filed as: GUHA BISWAJEET
105 granted patents·42 pending applications·141 citations·filing 2010–2025
99Inventor score
Top patents by PatentIndex Score
147 records- 0198US11855223B2Self-aligned gate endcap (SAGE) architectures with gate-all-around devicesINTEL CORP·Filed 2021·Granted Dec 26, 2023·6 cites·20 claims
- 0296US12342612B2Neighboring gate-all-around integrated circuit structures having disjoined epitaxial source or drain regionsINTEL CORP·Filed 2023·Granted Jun 24, 2025·2 cites·20 claims
- 0396US11862635B2Neighboring gate-all-around integrated circuit structures having disjoined epitaxial source or drain regionsINTEL CORP·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
- 0496US11824107B2Wrap-around contact structures for semiconductor nanowires and nanoribbonsINTEL CORP·Filed 2022·Granted Nov 21, 2023·2 cites·20 claims
- 0596US11799037B2Gate-all-around integrated circuit structures having asymmetric source and drain contact structuresINTEL CORP·Filed 2022·Granted Oct 24, 2023·2 cites·23 claims
- 0695US12272737B2Gate-all-around integrated circuit structures having adjacent structures for sub-fin electrical contactINTEL CORP·Filed 2023·Granted Apr 8, 2025·2 cites·21 claims
- 0795US11929396B2Cavity spacer for nanowire transistorsINTEL CORP·Filed 2022·Granted Mar 12, 2024·2 cites·20 claims
- 0894US11233152B2Self-aligned gate endcap (SAGE) architectures with gate-all-around devicesINTEL CORP·Filed 2018·Granted Jan 25, 2022·6 cites·23 claims
- 0993US11450738B2Source/drain regions in integrated circuit structuresINTEL CORP·Filed 2020·Granted Sep 20, 2022·3 cites·20 claims
- 1093US11367796B2Gate-all-around integrated circuit structures having asymmetric source and drain contact structuresINTEL CORP·Filed 2018·Granted Jun 21, 2022·6 cites·25 claims
- 1193US11342411B2Cavity spacer for nanowire transistorsINTEL CORP·Filed 2018·Granted May 24, 2022·7 cites·18 claims
- 1292US11527612B2Gate-all-around integrated circuit structures having vertically discrete source or drain structuresINTEL CORP·Filed 2018·Granted Dec 13, 2022·6 cites·13 claims
- 1392US11522048B2Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubsINTEL CORP·Filed 2019·Granted Dec 6, 2022·6 cites·20 claims
- 1492US9746612B2Fiber-waveguide evanescent couplerUNIV CORNELL·Filed 2014·Granted Aug 29, 2017·14 cites·5 claims
- 1591US8457453B2Passively-thermally-stabilized photonic apparatus, method, and applicationsLIPSON MICHAL·Filed 2010·Granted Jun 4, 2013·15 cites·19 claims
- 1690US12002810B2Gate-all-around integrated circuit structures having depopulated channel structures using bottom-up approachINTEL CORP·Filed 2018·Granted Jun 4, 2024·5 cites·13 claims
- 1790US11908856B2Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contactINTEL CORP·Filed 2019·Granted Feb 20, 2024·5 cites·22 claims
- 1890US11799009B2Gate-all-around integrated circuit structures having adjacent structures for sub-fin electrical contactINTEL CORP·Filed 2019·Granted Oct 24, 2023·4 cites·28 claims
- 1989US11398474B2Neighboring gate-all-around integrated circuit structures having disjoined epitaxial source or drain regionsINTEL CORP·Filed 2018·Granted Jul 26, 2022·4 cites·12 claims
- 2088US12382706B2Self-aligned gate endcap (SAGE) architectures with gate-all-around devicesINTEL CORP·Filed 2024·Granted Aug 5, 2025·0 cites·23 claims
- 2188US12364002B2Integrated circuit structures having metal gates with tapered plugsINTEL CORP·Filed 2021·Granted Jul 15, 2025·2 cites·20 claims
- 2288US11824116B2Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contactINTEL CORP·Filed 2019·Granted Nov 21, 2023·4 cites·20 claims
- 2388US2025126832A1Self-aligned gate endcap (sage) architectures with gate-all-around devicesINTEL CORP·Filed 2024·Application pending·0 cites
- 2486US12224350B2Self-aligned gate endcap (SAGE) architectures with gate-all-around devicesINTEL CORP·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 2586US11527640B2Wrap-around contact structures for semiconductor nanowires and nanoribbonsINTEL CORP·Filed 2019·Granted Dec 13, 2022·3 cites·23 claims
- 2686US11404578B2Dielectric isolation layer between a nanowire transistor and a substrateINTEL CORP·Filed 2018·Granted Aug 2, 2022·3 cites·18 claims
- 2785US11302790B2Fin shaping using templates and integrated circuit structures resulting therefromINTEL CORP·Filed 2018·Granted Apr 12, 2022·3 cites·22 claims
- 2884US11804523B2High aspect ratio source or drain structures with abrupt dopant profileINTEL CORP·Filed 2019·Granted Oct 31, 2023·3 cites·18 claims
- 2984US11043492B2Self-aligned gate edge trigate and finFET devicesINTEL CORP·Filed 2016·Granted Jun 22, 2021·4 cites·16 claims
- 3083US12328905B2Cavity spacer for nanowire transistorsINTEL CORP·Filed 2024·Granted Jun 10, 2025·0 cites·20 claims
- 3183US12230721B2Gate-all-around integrated circuit structures having asymmetric source and drain contact structuresINTEL CORP·Filed 2023·Granted Feb 18, 2025·0 cites·21 claims
- 3283US12211925B2Gate-all-around integrated circuit structures having oxide sub-finsINTEL CORP·Filed 2023·Granted Jan 28, 2025·0 cites·17 claims
- 3383US2025380478A1Source or drain structures with relatively high germanium contentINTEL CORP·Filed 2025·Application pending·0 cites
- 3483US2025331300A1Integrated circuit structures having cut metal gatesINTEL CORP·Filed 2025·Application pending·0 cites
- 3582US11621354B2Integrated circuit structures having partitioned source or drain contact structuresINTEL CORP·Filed 2018·Granted Apr 4, 2023·2 cites·25 claims
- 3682US2025280567A1Cavity spacer for nanowire transistorsINTEL CORP·Filed 2025·Application pending·0 cites
- 3781US12176429B2Wrap-around contact structures for semiconductor nanowires and nanoribbonsINTEL CORP·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 3881US12166031B2Substrate-less electrostatic discharge (ESD) integrated circuit structuresINTEL CORP·Filed 2020·Granted Dec 10, 2024·1 cites·20 claims
- 3981US2025133821A1Integrated circuit structures having cut metal gatesINTEL CORP·Filed 2024·Application pending·0 cites
- 4081US2025120152A1Gate-all-around integrated circuit structures having oxide sub-finsINTEL CORP·Filed 2024·Application pending·0 cites
- 4180US12453115B2Nanowire transistor structure and method of shapingINTEL CORP·Filed 2023·Granted Oct 21, 2025·0 cites·17 claims
- 4280US12349394B2Dielectric isolation layer between a nanowire transistor and a substrateINTEL CORP·Filed 2024·Granted Jul 1, 2025·0 cites·21 claims
- 4380US11251302B2Epitaxial oxide plug for strained transistorsINTEL CORP·Filed 2017·Granted Feb 15, 2022·2 cites·20 claims
- 4480US2025048698A1Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubsINTEL CORP·Filed 2024·Application pending·0 cites
- 4579US12230717B2Integrated circuit structures having partitioned source or drain contact structuresINTEL CORP·Filed 2023·Granted Feb 18, 2025·0 cites·21 claims
- 4679US11205715B2Self-aligned nanowireINTEL CORP·Filed 2017·Granted Dec 21, 2021·2 cites·19 claims
- 4779US10295739B2Athermal optical devices based on composite structuresUNIV CORNELL·Filed 2014·Granted May 21, 2019·4 cites·13 claims
- 4879US2024347539A1Integrated circuit structures having cut metal gatesINTEL CORP·Filed 2024·Application pending·0 cites
- 4979US2025113550A1Gate-all-around integrated circuit structures having nanowires with tight vertical spacingINTEL CORP·Filed 2024·Application pending·0 cites
- 5078US12206027B2Gate-all-around integrated circuit structures having nanowires with tight vertical spacingINTEL CORP·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
Showing the top 50 of 147 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →