Inventor · disambiguated record
Bingwu Liu
Also filed as: LIU BINGWU
30 granted patents·8 pending applications·153 citations·filing 2013–2025
95Inventor score
Top patents by PatentIndex Score
38 records- 0197US9324713B1Eliminating field oxide loss prior to FinFET source/drain epitaxial growthGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 26, 2016·32 cites·13 claims
- 0297US9112032B1Methods of forming replacement gate structures on semiconductor devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 18, 2015·29 cites·15 claims
- 0394US9425252B1Process for single diffusion break with simplified processGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 23, 2016·10 cites·9 claims
- 0494US9024368B1Fin-type transistor structures with extended embedded stress elements and fabrication methodsGLOBALFOUNDRIES INC·Filed 2013·Granted May 5, 2015·29 cites·18 claims
- 0587US10553707B1FinFETs having gates parallel to finsGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 4, 2020·5 cites·20 claims
- 0687US10177151B1Single-diffusion break structure for fin-type field effect transistorsGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 8, 2019·6 cites·20 claims
- 0787US9431396B2Single diffusion break with improved isolation and process window and reduced costGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 30, 2016·5 cites·5 claims
- 0886US9853128B2Devices and methods of forming unmerged epitaxy for FinFET deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Dec 26, 2017·4 cites·14 claims
- 0986US8846464B1Semiconductor device having controlled final metal critical dimensionGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 30, 2014·8 cites·20 claims
- 1084US9576856B2Fabrication of nanowire field effect transistor structuresGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 21, 2017·5 cites·17 claims
- 1183US10483377B2Devices and methods of forming unmerged epitaxy for FinFet deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 19, 2019·3 cites·15 claims
- 1277US10276560B2Passive device structure and methods of making thereofGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 30, 2019·2 cites·20 claims
- 1376US9570586B2Fabrication methods facilitating integration of different device architecturesGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 14, 2017·4 cites·19 claims
- 1476US9425129B1Methods for fabricating conductive vias of circuit structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 23, 2016·3 cites·20 claims
- 1576US2025324635A1Gate oxide formation for fin field-effect transistorMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1674US9171922B1Combination finFET/ultra-thin body transistor structure and methods of making such structuresGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 27, 2015·3 cites·18 claims
- 1772US9812336B2FinFET semiconductor structures and methods of fabricating sameGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 7, 2017·2 cites·3 claims
- 1870US12363934B2Gate oxide formation for fin field-effect transistorMICRON TECHNOLOGY INC·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 1966US9691787B2Co-fabricated bulk devices and semiconductor-on-insulator devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 27, 2017·1 cites·15 claims
- 2066US9331202B2Replacement gate structure on FinFET devices with reduced size fin in the channel regionGLOBALFOUNDRIES INC·Filed 2015·Granted May 3, 2016·1 cites·22 claims
- 2164US9252203B2Metal-insulator-metal back end of line capacitor structuresGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 2, 2016·1 cites·12 claims
- 2258US9337197B1Semiconductor structure having FinFET ultra thin body and methods of fabrication thereofGLOBALFOUNDRIES INC·Filed 2014·Granted May 10, 2016·0 cites·20 claims
- 2357US2025359305A1Stress liner compatible with oxide spacerMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2453US11404415B2Stacked-gate transistorsGLOBALFOUNDRIES US INC·Filed 2019·Granted Aug 2, 2022·0 cites·19 claims
- 2553US10096488B2FinFET semiconductor structures and methods of fabricating sameGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 9, 2018·0 cites·14 claims
- 2651US9735152B2Non-planar structure with extended exposed raised structures and same-level gate and spacersGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 15, 2017·0 cites·9 claims
- 2751US9564484B2Metal-insulator-metal back end of line capacitor structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 7, 2017·0 cites·8 claims
- 2851US2024055523A1Thick gate oxide transistor device and methodMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 2949US2023335582A1Memory device isolation structure and methodMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 3048US2016225901A1Semiconductor structure having finfet ultra thin bodyGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 3147US9496280B1Semiconductor structure having logic region and analog regionGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 15, 2016·0 cites·20 claims
- 3247US2016276345A1Eliminating field oxide loss prior to finfet source/drain epitaxial growthGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 3346US11315835B2Methods of forming an IC product comprising transistor devices with different threshold voltage levelsGLOBALFOUNDRIES US INC·Filed 2019·Granted Apr 26, 2022·0 cites·20 claims
- 3446US11264477B2Field-effect transistors with independently-tuned threshold voltagesGLOBALFOUNDRIES US INC·Filed 2019·Granted Mar 1, 2022·0 cites·8 claims
- 3546US10964598B2Methods of forming source/drain regions of a FinFET device and the resulting structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Mar 30, 2021·0 cites·18 claims
- 3645US9761594B2Hardmask for a halo/extension implant of a static random access memory (SRAM) layoutGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 12, 2017·0 cites·8 claims
- 3742US2021091222A1Fin structures of finfet devicesGLOBALFOUNDRIES US INC·Filed 2019·Application pending·0 cites
- 3833US2016254180A1Self aligned raised fin tip end sti to improve the fin end epi qualityGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Bingwu Liu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →