Inventor · disambiguated record
Budong You
Also filed as: YOU BUDONG
49 granted patents·2 pending applications·846 citations·filing 2001–2021
98Inventor score
Files withVOLTERRA SEMICONDUCTOR CORP25SILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD12YOU BUDONG8ZUNIGA MARCO A3LIDSKY DAVID1
Top patents by PatentIndex Score
51 records- 0199US7405117B2Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistorVOLTERRA SEMICONDUCTOR CORP·Filed 2006·Granted Jul 29, 2008·176 cites·41 claims
- 0298US7981739B1Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor and a conventional CMOS transistorVOLTERRA SEMICONDUCTOR CORP·Filed 2010·Granted Jul 19, 2011·29 cites·13 claims
- 0398US7405443B1Dual gate lateral double-diffused MOSFET (LDMOS) transistorVOLTERRA SEMICONDUCTOR CORP·Filed 2005·Granted Jul 29, 2008·84 cites·15 claims
- 0497US8716795B2Fabrication of lateral double-diffused metal oxide semiconductor (LDMOS) devicesYOU BUDONG·Filed 2011·Granted May 6, 2014·35 cites·20 claims
- 0597US7888222B2Method of fabricating a lateral double-diffused MOSFETVOLTERRA SEMICONDUCTOR CORP·Filed 2007·Granted Feb 15, 2011·32 cites·14 claims
- 0696US8912600B2Lateral double-diffused metal oxide semiconductor (LDMOS) transistorsYOU BUDONG·Filed 2011·Granted Dec 16, 2014·28 cites·20 claims
- 0796US8574973B1Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor and a conventional CMOS transistorYOU BUDONG·Filed 2013·Granted Nov 5, 2013·22 cites·10 claims
- 0896US8431450B1Methods and apparatus for LDMOS transistorsZUNIGA MARCO A·Filed 2011·Granted Apr 30, 2013·22 cites·8 claims
- 0995US8455340B2Method of fabricating heavily doped region in double-diffused source MOSFET (LDMOS) transistorZUNIGA MARCO A·Filed 2011·Granted Jun 4, 2013·21 cites·14 claims
- 1094US8119507B2Lateral double-diffused metal oxide semiconductor (LDMOS) transistorsYOU BUDONG·Filed 2008·Granted Feb 21, 2012·27 cites·20 claims
- 1194US7999318B2Heavily doped region in double-diffused source MOSFET (LDMOS) transistor and a method of fabricating the sameVOLTERRA SEMICONDUCTOR CORP·Filed 2008·Granted Aug 16, 2011·21 cites·14 claims
- 1294US7868378B1Methods and apparatus for LDMOS transistorsVOLTERRA SEMICONDUCTOR CORP·Filed 2006·Granted Jan 11, 2011·24 cites·19 claims
- 1393US7671411B2Lateral double-diffused MOSFET transistor with a lightly doped sourceVOLTERRA SEMICONDUCTOR CORP·Filed 2007·Granted Mar 2, 2010·19 cites·17 claims
- 1492US8390057B1Dual gate lateral double-diffused MOSFET (LDMOS) transistorZUNIGA MARCO A·Filed 2008·Granted Mar 5, 2013·17 cites·18 claims
- 1592US7074659B2Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistorVOLTERRA SEMICONDUCTOR CORP·Filed 2003·Granted Jul 11, 2006·54 cites·16 claims
- 1691US10559559B2Integrated protection devices with monitoring of electrical characteristicsVOLTERRA SEMICONDUCTOR CORP·Filed 2017·Granted Feb 11, 2020·4 cites·17 claims
- 1791US9679885B2Integrated protection devices with monitoring of electrical characteristicsLIDSKY DAVID·Filed 2012·Granted Jun 13, 2017·17 cites·53 claims
- 1891US7220633B2Method of fabricating a lateral double-diffused MOSFETVOLTERRA SEMICONDUCTOR CORP·Filed 2003·Granted May 22, 2007·35 cites·16 claims
- 1990US8138049B2Fabrication of lateral double-diffused metal oxide semiconductor (LDMOS) devicesYOU BUDONG·Filed 2009·Granted Mar 20, 2012·16 cites·20 claims
- 2089US7230470B1Power switch using a field-effect transistor (FET) pairVOLTERRA SEMICONDUCTOR CORP·Filed 2005·Granted Jun 12, 2007·17 cites·22 claims
- 2187US8405148B1Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor and a conventional CMOS transistorYOU BUDONG·Filed 2011·Granted Mar 26, 2013·6 cites·14 claims
- 2287US7038274B2Switching regulator with high-side p-type deviceVOLTERRA SEMICONDUCTOR CORP·Filed 2003·Granted May 2, 2006·35 cites·12 claims
- 2386US7666731B2Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor and a conventional CMOS transistorVOLTERRA SEMICONDUCTOR CORP·Filed 2007·Granted Feb 23, 2010·8 cites·7 claims
- 2486US7465621B1Method of fabricating a switching regulator with a high-side p-type deviceVOLTERRA SEMICONDUCTOR CORP·Filed 2005·Granted Dec 16, 2008·11 cites·14 claims
- 2585US7163856B2Method of fabricating a lateral double-diffused mosfet (LDMOS) transistor and a conventional CMOS transistorVOLTERRA SEMICONDUCTOR CORP·Filed 2003·Granted Jan 16, 2007·24 cites·17 claims
- 2683US10998416B2Laterally diffused metal oxide semiconductor device and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2019·Granted May 4, 2021·3 cites·18 claims
- 2782US8354717B2Lateral double-diffused MOSFETVOLTERRA SEMICONDUCTOR CORP·Filed 2011·Granted Jan 15, 2013·3 cites·13 claims
- 2882US8071436B2Method of fabricating a semiconductor device having a lateral double diffused MOSFET transistor with a lightly doped source and CMOS transistorYOU BUDONG·Filed 2010·Granted Dec 6, 2011·5 cites·10 claims
- 2979US11121251B2Laterally diffused metal oxide semiconductor device and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2019·Granted Sep 14, 2021·2 cites·7 claims
- 3078US10903340B2Laterally diffused metal oxide semiconductor structure and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2019·Granted Jan 26, 2021·2 cites·19 claims
- 3177US8936980B1Dual gate lateral double-diffused MOSFET (LDMOS) transistorVOLTERRA SEMICONDUCTOR CORP·Filed 2013·Granted Jan 20, 2015·3 cites·13 claims
- 3276US8664728B2Power transistor with protected channelLU YANG·Filed 2009·Granted Mar 4, 2014·4 cites·38 claims
- 3375US6433614B1MOSFET-based switchVOLTERRA SEMICONDUCTOR CORP·Filed 2001·Granted Aug 13, 2002·15 cites·24 claims
- 3474US8400784B2Flip chip package for monolithic switching regulatorYOU BUDONG·Filed 2009·Granted Mar 19, 2013·5 cites·20 claims
- 3567US9224603B2Method of fabricating power transistor with protected channelVOLTERRA SEMICONDUCTOR CORP·Filed 2014·Granted Dec 29, 2015·1 cites·17 claims
- 3664US9078381B2Method of connecting to a monolithic voltage regulatorSILERGY TECHNOLOGY·Filed 2013·Granted Jul 7, 2015·2 cites·19 claims
- 3762US11710787B2Laterally diffused metal oxide semiconductor device and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2021·Granted Jul 25, 2023·0 cites·11 claims
- 3862US6937086B1Method and apparatus for operating a field-effect transistor (FET) pairVOLTERRA SEMICONDUCTOR CORP·Filed 2004·Granted Aug 30, 2005·9 cites·41 claims
- 3960US11742206B2Laterally diffused metal oxide semiconductor device and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2021·Granted Aug 29, 2023·0 cites·12 claims
- 4060US8994106B2Lateral double-diffused MOSFETVOLTERRA SEMICONDUCTOR CORP·Filed 2014·Granted Mar 31, 2015·0 cites·3 claims
- 4159US11830932B2Laterally diffused metal oxide semiconductor structure and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2021·Granted Nov 28, 2023·0 cites·17 claims
- 4258US8698242B2Lateral double-diffused MOSFETVOLTERRA SEMICONDUCTOR CORP·Filed 2013·Granted Apr 15, 2014·0 cites·9 claims
- 4357US6529056B1Circuit with FET transistor pairVOLTERRA SEMICONDUCTOR CORP·Filed 2002·Granted Mar 4, 2003·6 cites·16 claims
- 4451US10438854B2Method for manufacturing CMOS structureSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2018·Granted Oct 8, 2019·0 cites·10 claims
- 4551US2013234249A1Methods and Apparatus for LDMOS TransistorsVOLTERRA SEMICONDUCTOR CORP·Filed 2013·Application pending·0 cites
- 4647US11949010B2Metal oxide semiconductor device and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2021·Granted Apr 2, 2024·0 cites·20 claims
- 4744US11329153B2Method for manufacturing laterally diffused metal oxide semiconductor device and semiconductor deviceSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2019·Granted May 10, 2022·0 cites·16 claims
- 4844US6703888B1Method of operating circuit with FET transistor pairVOLTERRA SEMICONDUCTOR CORP·Filed 2002·Granted Mar 9, 2004·2 cites·14 claims
- 4943US2016043004A1Method for manufacturing cmos structureSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2015·Application pending·0 cites
- 5038US9627513B2Method for manufacturing lateral double-diffused metal oxide semiconductor transistorSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2015·Granted Apr 18, 2017·0 cites·13 claims
Showing the top 50 of 51 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →