Inventor · disambiguated record
Carsten Reichel
Also filed as: REICHEL CARSTEN
9 granted patents·4 pending applications·19 citations·filing 2005–2013
81Inventor score
Files withKRONHOLZ STEPHAN5GLOBALFOUNDRIES INC3KRONHOLZ STEPHAN-DETLEF1LENSKI MARKUS1REICHEL CARSTEN1
Top patents by PatentIndex Score
13 records- 0181US8247282B2Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation processKRONHOLZ STEPHAN·Filed 2010·Granted Aug 21, 2012·6 cites·17 claims
- 0277US8324119B2Enhancing deposition uniformity of a channel semiconductor alloy by an in situ etch processREICHEL CARSTEN·Filed 2010·Granted Dec 4, 2012·6 cites·16 claims
- 0373US8293596B2Formation of a channel semiconductor alloy by depositing a hard mask for the selective epitaxial growthKRONHOLZ STEPHAN·Filed 2010·Granted Oct 23, 2012·4 cites·22 claims
- 0472US9064961B2Integrated circuits including epitaxially grown strain-inducing fills doped with boron for improved robustness from delimination and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 23, 2015·3 cites·19 claims
- 0552US8518784B2Adjusting of strain caused in a transistor channel by semiconductor material provided for threshold adjustmentKRONHOLZ STEPHAN·Filed 2009·Granted Aug 27, 2013·0 cites·20 claims
- 0648US8674416B2Semiconductor device with reduced threshold variability having a threshold adjusting semiconductor alloy in the device active regionGLOBALFOUNDRIES INC·Filed 2012·Granted Mar 18, 2014·0 cites·22 claims
- 0748US8609482B2Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation processKRONHOLZ STEPHAN·Filed 2012·Granted Dec 17, 2013·0 cites·15 claims
- 0847US2013307090A1Adjusting of strain caused in a transistor channel by semiconductor material provided for the threshold adjustmentGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 0938US2005233532A1Method of forming sidewall spacersLENSKI MARKUS·Filed 2005·Application pending·0 cites
- 1036US8614122B2Formation of a channel semiconductor alloy by forming a hard mask layer stack and applying a plasma-based mask patterning processKRONHOLZ STEPHAN-DETLEF·Filed 2011·Granted Dec 24, 2013·0 cites·20 claims
- 1136US2013299874A1Tmah recess for silicon germanium in positive channel region for cmos deviceWASYLUK JOANNA·Filed 2012·Application pending·0 cites
- 1235US2006148163A1Method of forming gate insulation layers of different characteristicsWIECZOREK KARSTEN·Filed 2005·Application pending·0 cites
- 1331US8283225B2Enhancing selectivity during formation of a channel semiconductor alloy by a wet oxidation processKRONHOLZ STEPHAN·Filed 2010·Granted Oct 9, 2012·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →