Inventor · disambiguated record
Cesare Ronsisvalle
Also filed as: RONSISVALLE CESARE
18 granted patents·2 pending applications·178 citations·filing 1989–2023
93Inventor score
Files withCONS RIC MICROELETTRONICA6ST MICROELECTRONICS SRL6RONSISVALLE CESARE2SGS THOMSON MICROELECTRONICS2LINGRUI SEMICONDUCTOR SHANGHAI CO LTD1
Top patents by PatentIndex Score
20 records- 0182US6168981B1Method and apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devicesCONS RIC MICROELETTRONICA·Filed 1999·Granted Jan 2, 2001·60 cites·44 claims
- 0280US5900652AApparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devicesCONS RIC MICROELETTRONICA·Filed 1995·Granted May 4, 1999·58 cites·28 claims
- 0365US11942930B2Field-effect transistor (FET) based synchronous rectifier for emulating diodeSTEIFPOWER TECH COMPANY LIMITED·Filed 2020·Granted Mar 26, 2024·1 cites·17 claims
- 0462US7868382B2Emitter-switched power actuator with integrated Zener diode between source and baseST MICROELECTRONICS SRL·Filed 2008·Granted Jan 11, 2011·2 cites·20 claims
- 0557US7982528B2Three-terminal power device with high switching speed and manufacturing processST MICROELECTRONICS SRL·Filed 2006·Granted Jul 19, 2011·1 cites·25 claims
- 0656US7095084B2Emitter switching configuration and corresponding integrated structureST MICROELECTRONICS SRL·Filed 2004·Granted Aug 22, 2006·7 cites·9 claims
- 0753US2024088215A1Trench mosfet device and manufacturing method thereforLINGRUI SEMICONDUCTOR SHANGHAI CO LTD·Filed 2023·Application pending·0 cites
- 0846US7755139B2Power device with high switching speed and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2003·Granted Jul 13, 2010·2 cites·27 claims
- 0944US7936047B2Method for realizing a contact of an integrated well in a semiconductor substrate, in particular for a base terminal of a bipolar transistor, with enhancement of the transistor performancesST MICROELECTRONICS SRL·Filed 2008·Granted May 3, 2011·0 cites·11 claims
- 1042US5073511AMethod for manufacturing a conductivity modulation mos semiconductor power device (himos)SGS THOMSON MICROELECTRONICS·Filed 1989·Granted Dec 17, 1991·8 cites·4 claims
- 1140US8420454B2Three-terminal power device with high switching speed and manufacturing processRONSISVALLE CESARE·Filed 2011·Granted Apr 16, 2013·0 cites·19 claims
- 1240US6696741B1High breakdown voltage PN junction structure, and related manufacturing processST MICROELECTRONICS SRL·Filed 1999·Granted Feb 24, 2004·8 cites·20 claims
- 1340US5250821AElectronic power device having plural elementary semiconductor components connected in parallelSGS THOMSON MICROELECTRONISC S·Filed 1992·Granted Oct 5, 1993·14 cites·11 claims
- 1439US5798287AMethod for forming a power MOS device chipCONS RIC MICROELETTRONICA·Filed 1997·Granted Aug 25, 1998·6 cites·33 claims
- 1536US2001055861A1Process for manufacturing deep well junction structuresFiled 2001·Application pending·0 cites
- 1633USRE44300EPower device with high switching speed and manufacturing method thereofRONSISVALLE CESARE·Filed 2003·Granted Jun 18, 2013·0 cites·31 claims
- 1733US5616512APower semiconductor devicesCONS RIC MICROELETTRONICA·Filed 1994·Granted Apr 1, 1997·5 cites·19 claims
- 1832US5821616APower MOS device chip and package assemblyCONS RIC MICROELETTRONICA·Filed 1997·Granted Oct 13, 1998·2 cites·41 claims
- 1931US5856701ADielectrically isolated power semiconductor devicesCONS RIC MICROELETTRONICA·Filed 1997·Granted Jan 5, 1999·2 cites·16 claims
- 2028US5397745AMethod of making electronic power device realized by a series of elementary semiconductor components connected in parallelSGS THOMSON MICROELECTRONICS·Filed 1993·Granted Mar 14, 1995·2 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →