Inventor · disambiguated record
Chih-Yang Chang
Also filed as: CHANG CHIH-YANG
111 granted patents·19 pending applications·592 citations·filing 2009–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD83TAIWAN SEMICONDUCTOR MFG21APPLIED MATERIALS INC13CHANG CHIH-YANG8LAM RES CORP2
Top patents by PatentIndex Score
130 records- 0199US10008662B2Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 26, 2018·53 cites·18 claims
- 0299US9172036B2Top electrode blocking layer for RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 27, 2015·29 cites·20 claims
- 0398US9847481B2Metal landing on top electrode of RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 19, 2017·24 cites·20 claims
- 0498US9553265B1RRAM device with data storage layer having increased heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 24, 2017·33 cites·20 claims
- 0598US9431604B2Resistive random access memory (RRAM) and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Aug 30, 2016·29 cites·20 claims
- 0698US9231197B2Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·23 cites·20 claims
- 0798US9023699B2Resistive random access memory (RRAM) structure and method of making the RRAM structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 5, 2015·21 cites·20 claims
- 0898US8963114B2One transistor and one resistive (1T1R) random access memory (RRAM) structure with dual spacersTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 24, 2015·32 cites·11 claims
- 0997US11944021B2Metal landing on top electrode of RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·2 cites·20 claims
- 1097US9577009B1RRAM cell with PMOS access transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·29 cites·20 claims
- 1197US9425392B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·13 cites·20 claims
- 1296US10504963B2RRAM memory cell with multiple filamentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·13 cites·20 claims
- 1396US9099647B2One transistor and one resistive (1T1R) random access memory (RAM) structure with dual spacersTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Aug 4, 2015·16 cites·20 claims
- 1494US10566519B2Method for forming a flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 18, 2020·8 cites·20 claims
- 1594US10163981B2Metal landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·8 cites·20 claims
- 1694US8992792B2Method of fabricating an ultra low-k dielectric self-aligned viaAPPLIED MATERIALS INC·Filed 2012·Granted Mar 31, 2015·20 cites·8 claims
- 1793US9537094B2Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·6 cites·20 claims
- 1893US8921818B2Resistance variable memory structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 30, 2014·10 cites·20 claims
- 1993US8742390B1Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jun 3, 2014·15 cites·20 claims
- 2092US9780302B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·5 cites·20 claims
- 2192US9112148B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 18, 2015·6 cites·20 claims
- 2291US11751405B2Integrated circuit and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 5, 2023·2 cites·20 claims
- 2391US11276819B2Metal landing on top electrode of RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 15, 2022·4 cites·20 claims
- 2491US9312482B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 12, 2016·9 cites·20 claims
- 2590US10038139B2One transistor and one resistive random access memory (RRAM) structure with spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·6 cites·20 claims
- 2690US9780145B2Resistive random access memory (RRAM) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·5 cites·20 claims
- 2790US9466794B2Low form voltage resistive random access memory (RRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 11, 2016·6 cites·20 claims
- 2890US9231205B2Low form voltage resistive random access memory (RRAM)TAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·6 cites·18 claims
- 2989US11751485B2Flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·1 cites·20 claims
- 3089US9478638B2Resistive switching random access memory with asymmetric source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 25, 2016·6 cites·20 claims
- 3189US9331277B2One transistor and one resistive random access memory (RRAM) structure with spacerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 3, 2016·6 cites·20 claims
- 3289US9076522B2Memory cells breakdown protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 7, 2015·12 cites·19 claims
- 3389US8547023B2LED light source moduleCHANG CHIH-YANG·Filed 2010·Granted Oct 1, 2013·27 cites·11 claims
- 3489US8388180B2Variable shaped lamp shade of LED lampCHANG CHIH-YANG·Filed 2010·Granted Mar 5, 2013·19 cites·8 claims
- 3587US11837312B1Magnetic memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·1 cites·20 claims
- 3687US9941470B2RRAM device with data storage layer having increased heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 10, 2018·4 cites·20 claims
- 3787US9673391B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 6, 2017·5 cites·20 claims
- 3887US9224470B1Memory circuit and method of programming memory circuitTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 29, 2015·12 cites·20 claims
- 3986US12256652B2Metal landing on top electrode of RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 18, 2025·0 cites·20 claims
- 4086US11201190B2RRAM memory cell with multiple filamentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 14, 2021·3 cites·20 claims
- 4186US10475999B2Metal landing on top electrode of RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·3 cites·20 claims
- 4286US9349953B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 24, 2016·6 cites·20 claims
- 4385US11094744B2Interconnect landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·2 cites·20 claims
- 4485US10903274B2Interconnect landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 26, 2021·2 cites·20 claims
- 4585US10050197B2Resistance variable memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·4 cites·20 claims
- 4684US12232333B2Integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 4783US8757834B2Variable shaped lamp shade of LED lampCHANG CHIH-YANG·Filed 2012·Granted Jun 24, 2014·6 cites·3 claims
- 4882US12337415B2Method and apparatus for laser texturing a componentAPPLIED MATERIALS INC·Filed 2023·Granted Jun 24, 2025·0 cites·16 claims
- 4982US9444045B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 13, 2016·2 cites·20 claims
- 5082US9236570B2Resistive memory cell array with top electrode bit lineTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jan 12, 2016·3 cites·20 claims
Showing the top 50 of 130 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →