Inventor · disambiguated record
Chin-Cheng Chien
Also filed as: CHIEN CHIN-CHENG
92 granted patents·22 pending applications·789 citations·filing 2002–2016
99Inventor score
Files withUNITED MICROELECTRONICS CORP53CHIEN CHIN-CHENG11LIAO CHIN-I8CHI MEI OPTOELECTRONICS CORP6YEH CHIU-HSIEN4
Top patents by PatentIndex Score
114 records- 0197US8853060B1Epitaxial processUNITED MICROELECTRONICS CORP·Filed 2013·Granted Oct 7, 2014·44 cites·19 claims
- 0296US8470714B1Method of forming fin structures in integrated circuitsTSAI SHIH-HUNG·Filed 2012·Granted Jun 25, 2013·44 cites·10 claims
- 0396US8441072B2Non-planar semiconductor structure and fabrication method thereofTSAI SHIH-HUNG·Filed 2011·Granted May 14, 2013·27 cites·19 claims
- 0496US8324059B2Method of fabricating a semiconductor structureGUO TED MING-LANG·Filed 2011·Granted Dec 4, 2012·97 cites·11 claims
- 0594US7473606B2Method for fabricating metal-oxide semiconductor transistorsUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jan 6, 2009·27 cites·17 claims
- 0693US8754448B2Semiconductor device having epitaxial layerLIAO CHIN-I·Filed 2011·Granted Jun 17, 2014·18 cites·9 claims
- 0793US7553763B2Salicide process utilizing a cluster ion implantation processUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jun 30, 2009·22 cites·26 claims
- 0892US8647953B2Method for fabricating first and second epitaxial cap layersLIAO CHIN-I·Filed 2011·Granted Feb 11, 2014·17 cites·19 claims
- 0992US6991991B2Method for preventing to form a spacer undercut in SEG pre-clean processUNITED MICROELECTRONICS CORP·Filed 2003·Granted Jan 31, 2006·67 cites·13 claims
- 1090US9263257B2Semiconductor device having fin-shaped structure and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Feb 16, 2016·8 cites·9 claims
- 1190US8580625B2Metal oxide semiconductor transistor and method of manufacturing the sameLU TSUO-WEN·Filed 2011·Granted Nov 12, 2013·13 cites·26 claims
- 1290US7626551B2Multi-band planar inverted-F antennaFOXCONN COMM TECHNOLOGY CORP·Filed 2007·Granted Dec 1, 2009·34 cites·17 claims
- 1389US8551829B2Method for manufacturing multi-gate transistor deviceCHIEN CHIN-CHENG·Filed 2010·Granted Oct 8, 2013·11 cites·18 claims
- 1489US8502288B2Semiconductor structure and method for slimming spacerGUO TED MING-LANG·Filed 2011·Granted Aug 6, 2013·11 cites·7 claims
- 1589US8324118B2Manufacturing method of metal gate structureLIU CHIH-CHIEN·Filed 2011·Granted Dec 4, 2012·11 cites·10 claims
- 1688US8536038B2Manufacturing method for metal gate using ion implantationWang shao-wei·Filed 2011·Granted Sep 17, 2013·10 cites·35 claims
- 1788US7396717B2Method of forming a MOS transistorUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jul 8, 2008·15 cites·18 claims
- 1887US9064893B2Gradient dopant of strained substrate manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2013·Granted Jun 23, 2015·7 cites·18 claims
- 1987US8674452B2Semiconductor device with lower metal layer thickness in PMOS regionCHIEN CHIN-CHENG·Filed 2011·Granted Mar 18, 2014·10 cites·5 claims
- 2086US8426284B2Manufacturing method for semiconductor structureYEH CHIU-HSIEN·Filed 2011·Granted Apr 23, 2013·8 cites·19 claims
- 2186US7736982B2Method for forming a semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2008·Granted Jun 15, 2010·12 cites·20 claims
- 2285US8710632B2Compound semiconductor epitaxial structure and method for fabricating the sameYU TIEN-WEI·Filed 2012·Granted Apr 29, 2014·13 cites·16 claims
- 2385US8609529B2Fabrication method and structure of through silicon viaLIN CHIN-FU·Filed 2012·Granted Dec 17, 2013·7 cites·12 claims
- 2485US8497198B2Semiconductor processCHIEN CHIN-CHENG·Filed 2011·Granted Jul 30, 2013·8 cites·18 claims
- 2585US6815770B1MOS transistor having reduced source/drain extension sheet resistanceUNITED MICROELECTRONICS CORP·Filed 2003·Granted Nov 9, 2004·37 cites·13 claims
- 2684US9312180B2Method for forming semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2014·Granted Apr 12, 2016·6 cites·12 claims
- 2784US7545023B2Semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jun 9, 2009·10 cites·10 claims
- 2883US7795101B2Method of forming a MOS transistorUNITED MICROELECTRONICS CORP·Filed 2010·Granted Sep 14, 2010·7 cites·10 claims
- 2983US6839112B2Liquid crystal displayCHI MEI OPTOELECTRONICS CORP·Filed 2003·Granted Jan 4, 2005·23 cites·7 claims
- 3082US9263282B2Method of fabricating semiconductor patternsUNITED MICROELECTRONICS CORP·Filed 2013·Granted Feb 16, 2016·5 cites·13 claims
- 3182US9184100B2Semiconductor device having strained fin structure and method of making the sameTSAI TENG-CHUN·Filed 2011·Granted Nov 10, 2015·6 cites·9 claims
- 3282US8232154B2Method for fabricating semiconductor deviceCHIEN CHIN-CHENG·Filed 2009·Granted Jul 31, 2012·9 cites·13 claims
- 3381US8822284B2Method for fabricating FinFETs and semiconductor structure fabricated using the methodLIN CHIN-FU·Filed 2012·Granted Sep 2, 2014·4 cites·13 claims
- 3481US8552503B2Strained silicon structureHWANG GUANG-YAW·Filed 2010·Granted Oct 8, 2013·6 cites·12 claims
- 3581US8476169B2Method of making strained silicon channel semiconductor structureYANG CHAN-LON·Filed 2011·Granted Jul 2, 2013·4 cites·14 claims
- 3681US8329547B2Semiconductor process for etching a recess into a substrate by using an etchant that contains hydrogen peroxideWU CHUN-YUAN·Filed 2010·Granted Dec 11, 2012·5 cites·17 claims
- 3780US9159831B2Multigate field effect transistor and process thereofUNITED MICROELECTRONICS CORP·Filed 2012·Granted Oct 13, 2015·4 cites·7 claims
- 3879US9281201B2Method of manufacturing semiconductor device having metal gateUNITED MICROELECTRONICS CORP·Filed 2013·Granted Mar 8, 2016·4 cites·19 claims
- 3978US8405155B2Semiconductor structure with gate structure, source/drain region and recess filling with epitaxial layerYEH CHIU-HSIEN·Filed 2010·Granted Mar 26, 2013·5 cites·12 claims
- 4076US8361854B2Fin field-effect transistor structure and manufacturing process thereofUNITED MICROELECTRONICS CORP·Filed 2011·Granted Jan 29, 2013·3 cites·12 claims
- 4175US9559189B2Non-planar FETCHIEN CHIN-CHENG·Filed 2012·Granted Jan 31, 2017·3 cites·7 claims
- 4275US9184292B2Semiconductor structure with different fins of FinFETsUNITED MICROELECTRONICS CORP·Filed 2014·Granted Nov 10, 2015·2 cites·20 claims
- 4375US7037793B2Method of forming a transistor using selective epitaxial growthUNITED MICROELECTRONICS CORP·Filed 2004·Granted May 2, 2006·21 cites·15 claims
- 4474US9076652B2Semiconductor process for modifying shape of recessUNITED MICROELECTRONICS CORP·Filed 2013·Granted Jul 7, 2015·2 cites·19 claims
- 4574US6943085B2Method of manufacturing metal-oxide-semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2003·Granted Sep 13, 2005·14 cites·19 claims
- 4671US8928126B2Epitaxial layerUNITED MICROELECTRONICS CORP·Filed 2012·Granted Jan 6, 2015·2 cites·8 claims
- 4771US8822336B2Through-silicon via forming methodTSAI TENG-CHUN·Filed 2011·Granted Sep 2, 2014·3 cites·8 claims
- 4870US9214551B2Method for fabricating semiconductor device, and semiconductor device made therebyUNITED MICROELECTRONICS CORP·Filed 2014·Granted Dec 15, 2015·2 cites·6 claims
- 4969US9034705B2Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2013·Granted May 19, 2015·5 cites·19 claims
- 5069US6819370B2Liquid crystal display panel including two PGB for outputting signals to the same conductive wires and a repair lineCHI MEI OPTOELECTRONICS CORP·Filed 2003·Granted Nov 16, 2004·11 cites·17 claims
Showing the top 50 of 114 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →