Inventor · disambiguated record
Christopher P. D'Emic
Also filed as: D EMIC CHRISTOPHER · D EMIC CHRISTOPHER P · D'EMIC CHRISTOPHER PETER · DEMIC CHRISTOPHER P
34 granted patents·11 pending applications·1,109 citations·filing 1998–2023
97Inventor score
Top patents by PatentIndex Score
45 records- 0198US6524935B1Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer techniqueIBM·Filed 2000·Granted Feb 25, 2003·250 cites·31 claims
- 0298US6057212AMethod for making bonded metal back-plane substratesIBM·Filed 1998·Granted May 2, 2000·388 cites·26 claims
- 0397US8828138B2FET nanopore sensorBEDELL STEPHEN W·Filed 2010·Granted Sep 9, 2014·25 cites·13 claims
- 0497US8586441B1Germanium lateral bipolar junction transistorCAI JIN·Filed 2012·Granted Nov 19, 2013·32 cites·20 claims
- 0597US6444592B1Interfacial oxidation process for high-k gate dielectric process integrationIBM·Filed 2000·Granted Sep 3, 2002·191 cites·22 claims
- 0696US9331076B2Group III nitride integration with CMOS technologyIBM·Filed 2015·Granted May 3, 2016·11 cites·12 claims
- 0796US8558282B1Germanium lateral bipolar junction transistorCAI JIN·Filed 2012·Granted Oct 15, 2013·26 cites·20 claims
- 0895US8557670B1SOI lateral bipolar junction transistor having a wide band gap emitter contactCAI JIN·Filed 2012·Granted Oct 15, 2013·22 cites·20 claims
- 0988US9887278B2Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic baseIBM·Filed 2015·Granted Feb 6, 2018·5 cites·10 claims
- 1087US9660069B2Group III nitride integration with CMOS technologyIBM·Filed 2016·Granted May 23, 2017·3 cites·15 claims
- 1186US9362281B2Group III nitride integration with CMOS technologyIBM·Filed 2015·Granted Jun 7, 2016·3 cites·7 claims
- 1284US9110014B2Field effect transistor-based bio-sensorIBM·Filed 2014·Granted Aug 18, 2015·5 cites·20 claims
- 1383US7169674B2Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrierIBM·Filed 2005·Granted Jan 30, 2007·9 cites·20 claims
- 1479US6893979B2Method for improved plasma nitridation of ultra thin gate dielectricsIBM·Filed 2001·Granted May 17, 2005·21 cites·7 claims
- 1577US6891231B2Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrierIBM·Filed 2001·Granted May 10, 2005·19 cites·18 claims
- 1676US8999739B2Field effect transistor-based bio-sensorIBM·Filed 2013·Granted Apr 7, 2015·3 cites·6 claims
- 1776US8994077B2Field effect transistor-based bio sensorIBM·Filed 2012·Granted Mar 31, 2015·3 cites·7 claims
- 1876US8580635B2Method of replacing silicon with metal in integrated circuit chip fabricationCHAN KEVIN K·Filed 2011·Granted Nov 12, 2013·3 cites·21 claims
- 1975US9647099B2Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown baseIBM·Filed 2015·Granted May 9, 2017·2 cites·12 claims
- 2075US7115959B2Method of forming metal/high-k gate stacks with high mobilityIBM·Filed 2004·Granted Oct 3, 2006·17 cites·26 claims
- 2174US9564526B2Group III nitride integration with CMOS technologyIBM·Filed 2016·Granted Feb 7, 2017·1 cites·19 claims
- 2274US8917096B2Determination of isoelectric points of biomolecules using capacitive sensorsIBM·Filed 2012·Granted Dec 23, 2014·2 cites·5 claims
- 2368US6642156B2Method for forming heavy nitrogen-doped ultra thin oxynitride gate dielectricsIBM·Filed 2001·Granted Nov 4, 2003·11 cites·11 claims
- 2463US7078300B2Thin germanium oxynitride gate dielectric for germanium-based devicesIBM·Filed 2003·Granted Jul 18, 2006·7 cites·16 claims
- 2563US6770500B2Process of passivating a metal-gated complementary metal oxide semiconductorIBM·Filed 2002·Granted Aug 3, 2004·10 cites·20 claims
- 2661US6350321B1UHV horizontal hot wall cluster CVD/growth designIBM·Filed 1998·Granted Feb 26, 2002·28 cites·14 claims
- 2760US7109559B2Nitrided ultra thin gate dielectricsIBM·Filed 2004·Granted Sep 19, 2006·6 cites·3 claims
- 2859US9103770B2Determination of isoelectric points of biomolecules using capacitive sensorsIBM·Filed 2013·Granted Aug 11, 2015·0 cites·16 claims
- 2958US10056251B2Hetero-integration of III-N material on siliconIBM·Filed 2016·Granted Aug 21, 2018·0 cites·7 claims
- 3057US2018315591A1Hetero-integration of iii-n material on siliconIBM·Filed 2018·Application pending·0 cites
- 3156US10236366B2Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic baseIBM·Filed 2017·Granted Mar 19, 2019·0 cites·18 claims
- 3255US9601583B2Hetero-integration of III-N material on siliconIBM·Filed 2015·Granted Mar 21, 2017·0 cites·15 claims
- 3355US2025201716A1Tantalum electrode with tantalum nitride liner as rie diffusion barrierIBM·Filed 2023·Application pending·0 cites
- 3451US2014015051A1Method of replacing silicon with metal in integrated circuit chip fabricationCHAN KEVIN K·Filed 2013·Application pending·0 cites
- 3550US9691886B2Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown baseIBM·Filed 2015·Granted Jun 27, 2017·0 cites·14 claims
- 3649US8153514B2Method of forming metal/high-κ gate stacks with high mobilityANDREONI WANDA·Filed 2008·Granted Apr 10, 2012·0 cites·5 claims
- 3749US2006202279A1Thin germanium oxynitride gate dielectric for germanium-based devicesIBM·Filed 2006·Application pending·0 cites
- 3848US2015014752A1Thin body fet nanopore sensor for sensing and screening biomoleculesIBM·Filed 2013·Application pending·0 cites
- 3947US2013256757A1Soi lateral bipolar junction transistor having a wide band gap emitter contactCAI JIN·Filed 2012·Application pending·0 cites
- 4044US2006289903A1Method of forming metal/high-k gate stacks with high mobilityANDREONI WANDA·Filed 2006·Application pending·0 cites
- 4143US2016087068A1Lateral bipolar transistor with base extension regionIBM·Filed 2014·Application pending·0 cites
- 4243US2013049200A1Silicidation of device contacts using pre-amorphization implant of semiconductor substrateBESSER PAUL R·Filed 2012·Application pending·0 cites
- 4341US2013049199A1Silicidation of device contacts using pre-amorphization implant of semiconductor substrateBESSER PAUL R·Filed 2011·Application pending·0 cites
- 4439US6281551B1Back-plane for semiconductor deviceIBM·Filed 1999·Granted Aug 28, 2001·6 cites·15 claims
- 4539US2008017936A1Semiconductor device structures (gate stacks) with charge compositionsIBM·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →