Inventor · disambiguated record
Charles H. Dennison
Also filed as: DENNISON CHARLES · DENNISON CHARLES H
295 granted patents·16 pending applications·14,901 citations·filing 1989–2020
99Inventor score
Files withMICRON TECHNOLOGY INC239OVONYX INC20INTEL CORP14DENNISON CHARLES H13MICRON SEMICONDUCTOR INC10
Top patents by PatentIndex Score
311 records- 0199US6744088B1Phase change memory device on a planar composite layerINTEL CORP·Filed 2002·Granted Jun 1, 2004·394 cites·26 claims
- 0299US6696355B2Method to selectively increase the top resistance of the lower programming electrode in a phase-change memoryOVONYX INC·Filed 2000·Granted Feb 24, 2004·344 cites·19 claims
- 0399US6673700B2Reduced area intersection between electrode and programming elementOVONYX INC·Filed 2001·Granted Jan 6, 2004·648 cites·14 claims
- 0499US6593176B2Method for forming phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contactOVONYX INC·Filed 2002·Granted Jul 15, 2003·532 cites·22 claims
- 0599US6534781B2Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contactOVONYX INC·Filed 2000·Granted Mar 18, 2003·684 cites·8 claims
- 0699US6511867B2Utilizing atomic layer deposition for programmable deviceOVONYX INC·Filed 2001·Granted Jan 28, 2003·692 cites·5 claims
- 0799US5498562ASemiconductor processing methods of forming stacked capacitorsMICRON TECHNOLOGY INC·Filed 1994·Granted Mar 12, 1996·263 cites·17 claims
- 0899US5292677AReduced mask CMOS process for fabricating stacked capacitor multi-megabit dynamic random access memories utilizing single etch stop layer for contactsMICRON TECHNOLOGY INC·Filed 1992·Granted Mar 8, 1994·317 cites·18 claims
- 0998US6791102B2Phase change memoryINTEL CORP·Filed 2002·Granted Sep 14, 2004·363 cites·19 claims
- 1098US6649928B2Method to selectively remove one side of a conductive bottom electrode of a phase-change memory cell and structure obtained therebyINTEL CORP·Filed 2000·Granted Nov 18, 2003·199 cites·13 claims
- 1198US6646297B2Lower electrode isolation in a double-wide trenchOVONYX INC·Filed 2000·Granted Nov 11, 2003·192 cites·19 claims
- 1298US5340765AMethod for forming enhanced capacitance stacked capacitor structures using hemi-spherical grain polysiliconMICRON SEMICONDUCTOR INC·Filed 1993·Granted Aug 23, 1994·252 cites·34 claims
- 1398US5338700AMethod of forming a bit line over capacitor array of memory cellsMICRON SEMICONDUCTOR INC·Filed 1993·Granted Aug 16, 1994·311 cites·33 claims
- 1498US5270241AOptimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishingMICRON TECHNOLOGY INC·Filed 1992·Granted Dec 14, 1993·237 cites·60 claims
- 1598US5162248AOptimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishingMICRON TECHNOLOGY INC·Filed 1992·Granted Nov 10, 1992·236 cites·16 claims
- 1698US5013680AProcess for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithographyMICRON TECHNOLOGY INC·Filed 1990·Granted May 7, 1991·461 cites·21 claims
- 1797US7838341B2Self-aligned memory cells and method for formingOVONYX INC·Filed 2008·Granted Nov 23, 2010·52 cites·36 claims
- 1897US6924190B2Use of gate electrode workfunction to improve DRAM refreshMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 2, 2005·110 cites·13 claims
- 1997US6037218ASemiconductor processing methods of forming stacked capacitorsMICRON TECHNOLOGY INC·Filed 1997·Granted Mar 14, 2000·120 cites·12 claims
- 2097US5652164ASemiconductor processing methods of forming stacked capacitorsMICRON TECHNOLOGY INC·Filed 1995·Granted Jul 29, 1997·120 cites·22 claims
- 2197US5605857AMethod of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cellsMICRON TECHNOLOGY INC·Filed 1995·Granted Feb 25, 1997·226 cites·6 claims
- 2297US5401681AMethod of forming a bit line over capacitor array of memory cellsMICRON TECHNOLOGY INC·Filed 1994·Granted Mar 28, 1995·265 cites·15 claims
- 2397US5362666AMethod of producing a self-aligned contact penetrating cell plateMICRON TECHNOLOGY INC·Filed 1994·Granted Nov 8, 1994·204 cites·16 claims
- 2497US5340763AMulti-pin stacked capacitor utilizing micro villus patterning in a container cell and method to fabricate sameMICRON SEMICONDUCTOR INC·Filed 1993·Granted Aug 23, 1994·249 cites·4 claims
- 2596US10090318B2Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structureMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 2, 2018·23 cites·19 claims
- 2696US6552401B1Use of gate electrode workfunction to improve DRAM refreshMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 22, 2003·85 cites·99 claims
- 2796US6180450B1Semiconductor processing methods of forming stacked capacitorsMICRON TECHNOLOGIES INC·Filed 1999·Granted Jan 30, 2001·127 cites·18 claims
- 2896US5624863ASemiconductor processing method of forming complementary N-type doped and P-type doped active regions within a semiconductor substrateMICRON TECHNOLOGY INC·Filed 1995·Granted Apr 29, 1997·146 cites·26 claims
- 2996US5330879AMethod for fabrication of close-tolerance lines and sharp emission tips on a semiconductor waferMICRON TECHNOLOGY INC·Filed 1992·Granted Jul 19, 1994·263 cites·23 claims
- 3096US5053351AMethod of making stacked E-cell capacitor DRAM cellMICRON TECHNOLOGY INC·Filed 1991·Granted Oct 1, 1991·150 cites·18 claims
- 3195US9557376B2Apparatuses and methods for die seal crack detectionMICRON TECHNOLOGY INC·Filed 2016·Granted Jan 31, 2017·10 cites·5 claims
- 3295US9184175B2Floating gate memory cells in vertical memoryMICRON TECHNOLOGY INC·Filed 2013·Granted Nov 10, 2015·15 cites·8 claims
- 3395US8440535B2Forming a phase change memory with an ovonic threshold switchDENNISON CHARLES H·Filed 2012·Granted May 14, 2013·19 cites·8 claims
- 3495US6605527B2Reduced area intersection between electrode and programming elementINTEL CORP·Filed 2001·Granted Aug 12, 2003·480 cites·13 claims
- 3595US5858877ASelf-aligned process for making contacts to silicon substrates during the manufacture of integrated circuits thereinMICRON TECHNOLOGY INC·Filed 1997·Granted Jan 12, 1999·111 cites·24 claims
- 3695US5705838AArray of bit line over capacitor array of memory cellsMICRON TECHNOLOGY INC·Filed 1996·Granted Jan 6, 1998·130 cites·4 claims
- 3795US5534449AMethods of forming complementary metal oxide semiconductor (CMOS) integrated circuitryMICRON TECHNOLOGY INC·Filed 1995·Granted Jul 9, 1996·100 cites·30 claims
- 3895US5494841ASplit-polysilicon CMOS process for multi-megabit dynamic memories incorporating stacked container capacitor cellsMICRON SEMICONDUCTOR INC·Filed 1994·Granted Feb 27, 1996·111 cites·18 claims
- 3995US5061650AMethod for formation of a stacked capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Oct 29, 1991·142 cites·22 claims
- 4094US9991273B2Floating gate memory cells in vertical memoryMICRON TECHNOLOGY INC·Filed 2017·Granted Jun 5, 2018·8 cites·21 claims
- 4194US9793282B2Floating gate memory cells in vertical memoryMICRON TECHNOLOGY INC·Filed 2015·Granted Oct 17, 2017·9 cites·19 claims
- 4294US9287184B2Apparatuses and methods for die seal crack detectionMICRON TECHNOLOGY INC·Filed 2013·Granted Mar 15, 2016·14 cites·9 claims
- 4394US5686747AIntegrated circuits comprising interconnecting plugsMICRON TECHNOLOGY INC·Filed 1996·Granted Nov 11, 1997·124 cites·19 claims
- 4493US9659949B2Integrated structuresMICRON TECHNOLOGY INC·Filed 2015·Granted May 23, 2017·9 cites·14 claims
- 4593US5821140AMethod of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cellsMICRON TECHNOLOGY INC·Filed 1996·Granted Oct 13, 1998·115 cites·9 claims
- 4693US5616934AFully planarized thin film transistor (TFT) and process to fabricate sameMICRON TECHNOLOGY INC·Filed 1996·Granted Apr 1, 1997·147 cites·40 claims
- 4792US7803655B2Method to manufacture a phase change memoryOVONYX INC·Filed 2007·Granted Sep 28, 2010·25 cites·8 claims
- 4892US7314776B2Method to manufacture a phase change memoryOVONYX INC·Filed 2002·Granted Jan 1, 2008·69 cites·2 claims
- 4992US6537891B1Silicon on insulator DRAM process utilizing both fully and partially depleted devicesMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 25, 2003·50 cites·69 claims
- 5092US5900660AMethod of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory callsMICRON TECHNOLOGY INC·Filed 1997·Granted May 4, 1999·95 cites·18 claims
Showing the top 50 of 311 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →