Inventor · disambiguated record
Chia-Cheng Ho
Also filed as: HO CHIA CHENG
50 granted patents·14 pending applications·356 citations·filing 2004–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD50TAIWAN SEMICONDUCTOR MFG4BENQ CORP2HO CHIA-CHENG2CHANG CHIH-SHENG1
Top patents by PatentIndex Score
64 records- 0197US8796759B2Fin-like field effect transistor (FinFET) device and method of manufacturing samePERNG TSU-HSIU·Filed 2010·Granted Aug 5, 2014·235 cites·19 claims
- 0294US8881066B2Mandrel modification for achieving single fin fin-like field effect transistor (FinFET) deviceSHIEH MING-FENG·Filed 2011·Granted Nov 4, 2014·21 cites·20 claims
- 0393US8759184B2FinFETs and the methods for forming the sameHO CHIA-CHENG·Filed 2012·Granted Jun 24, 2014·17 cites·20 claims
- 0493US8609499B2FinFETs and the methods for forming the sameHO CHIA-CHENG·Filed 2012·Granted Dec 17, 2013·18 cites·8 claims
- 0592US2025366074A1Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0691US11387360B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·2 cites·20 claims
- 0791US11335784B2Field plate structure for high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 17, 2022·2 cites·20 claims
- 0890US12166108B2Strained transistor with conductive plateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·2 cites·20 claims
- 0989US10818562B2Semiconductor structure and testing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 27, 2020·4 cites·20 claims
- 1089US10707347B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 7, 2020·3 cites·20 claims
- 1189US9029958B2FinFETs and the methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 12, 2015·9 cites·20 claims
- 1288US10732209B2Semiconductor test device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·3 cites·20 claims
- 1388US9601598B2Method of manufacturing a fin-like field effect transistor (FinFET) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 21, 2017·7 cites·19 claims
- 1487US11411086B2Field plate and isolation structure for high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·2 cites·20 claims
- 1587US10670641B2Semiconductor test device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 2, 2020·2 cites·19 claims
- 1686US11916115B2Field plate structure to enhance transistor breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·1 cites·20 claims
- 1786US11164970B2Contact field plateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 2, 2021·5 cites·20 claims
- 1886US10872893B2Dual nitride stressor for semiconductor device and method of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·3 cites·20 claims
- 1983US12336216B2Ferroelectric semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 2082US2025344478A1Field plate and isolation structure for high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2181US11121225B2Field plate structure to enhance transistor breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·2 cites·20 claims
- 2281US10861946B1Field plate structure for high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·2 cites·20 claims
- 2381US10141310B2Short channel effect suppressionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 27, 2018·4 cites·20 claims
- 2481US9379217B2FinFETs and the methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 28, 2016·4 cites·19 claims
- 2579US12302620B2Field plate structure to enhance transistor breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 2678US12408387B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 2778US11855221B2Ferroelectric semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 2877US12243930B2Semiconductor device with fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 2975US2025324696A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3073US12439668B2Field plate and isolation structure for high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
- 3173US12249629B2Field plate structure for high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 3273US11227828B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·1 cites·20 claims
- 3373US2025176240A1Semiconductor device with fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3472US11189726B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·0 cites·20 claims
- 3571US10797174B2Semiconductor device with fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·1 cites·15 claims
- 3671US10505040B2Method of manufacturing a semiconductor device having a gate with ferroelectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·1 cites·20 claims
- 3771US10395937B2Fin patterning for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 27, 2019·1 cites·20 claims
- 3871US9911850B2FinFETs and the methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 6, 2018·1 cites·20 claims
- 3971US8906710B2Monitor test key of epi profileCHANG CHIH-SHENG·Filed 2011·Granted Dec 9, 2014·2 cites·19 claims
- 4071US2025063750A1Strained transistor with conductive plateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4169US12489049B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
- 4269US12419088B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·0 cites·20 claims
- 4369US11513145B2Semiconductor test device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·0 cites·20 claims
- 4468US11942380B2Semiconductor structure and testing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 26, 2024·0 cites·20 claims
- 4568US9728461B2Method of forming semiconductor device with different threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·1 cites·20 claims
- 4665US11522085B2Ferroelectric semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 6, 2022·0 cites·20 claims
- 4763US11444174B2Semiconductor device with Fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 13, 2022·0 cites·20 claims
- 4858US9515071B2Asymmetric source/drain depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 6, 2016·0 cites·20 claims
- 4958US9269641B2Monitor test key of epi profileTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 23, 2016·0 cites·20 claims
- 5057US2025254965A1Lateral metal oxide semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 64 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Chia-Cheng Ho files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →